STD1802T4-A;中文规格书,Datasheet资料

June 2007Rev 11/10

Table 1.

Device summary

Order code Marking Package Packaging STD1802T4-A

D1802

DPAK

Tape & reel

STD1802T4-A

Low voltage fast-switching NPN power transistor

Features

■

This device is qualified for automotive application

■Very low collector to emitter saturation voltage ■High current gain characteristic ■Fast-switching speed

■

Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4)

Description

The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Applications

■CCFL drivers ■Voltage regulators ■Relay drivers

■

High efficiency, low voltage, switching applications

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Electrical ratings STD1802T4-A 1 Electrical ratings

Table 2.Absolute maximum rating

Symbol Parameter Value Unit

V CBO Collector-base voltage (I E =0)80V

V CEO Collector-emitter voltage (I B =0)60V

V EBO Emitter-base voltage (I C =0)6V

I C Collector current3A

I CM Collector peak current (t P < 5ms)6A

I B Base current1A

P tot Total dissipation at T c≤ 25°C15W

T stg Storage temperature-65 to 150°C

T J Max. operating junction temperature150°C Table 3.Thermal data

Symbol Parameter Value Unit

R thj-case Thermal resistance junction-case __max8.33°C/W 2/10

STD1802T4-A Electrical characteristics

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2 Electrical characteristics

(T case = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300 μs, duty cycle ≤1.5%

Table 4.

Electrical characteristics

Symbol Parameter

Test Conditions Min.

Typ.

Max.Unit I CBO Collector cut-off current

(I E =0)

V CB = 40V 0.1μA I EBO

Emitter cut-off current (I C =0)

V EB = 4V

0.1

μA

V (BR)CBO Collector-base breakdown voltage (I E = 0)

I C =100μA

80V

V (BR)CEO Collector-emitter breakdown voltage (I B = 0)

I C =1mA

60V

V (BR)EBO Emitter-base breakdown

voltage (I C = 0)I E =100μA

6

V V CE(sat) (1)Collector-emitter saturation voltage I C =2A _ _ I B =100mA I C =3A __ _ I B =150mA 150200300400mV mV V BE(sat) (1)Base-emitter saturation voltage I C =2A _ _ I B =100mA 0.9

1.2V

h FE (1)DC current gain I C =100mA V CE =2V I C =3A V CE =2V 200100

400

f T Transition frequency V CE =10V I C =50mA 150MHz C CBO

Collector-base capacitance V CB =10V f = 1MHz

50

pF

t ON t s t f

Resistive load Turn-on time Storage time Fall time

I C =1A V CC =30V I B1 =-I B2 =0.1A

501.35120

ns μs ns

Electrical characteristics STD1802T4-A

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2.1 Electrical characteristics (curves)

Figure 2.Derating curve

Figure 3.

DC current gain

Figure 4.

Collector-emitter saturation

Figure 5.

Collector-emitter saturation Figure 6.

Base-emitter saturation

Figure 7.

Base-emitter on voltage

STD1802T4-A

Electrical characteristics

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Figure 8.

Switching times resistive

Figure 9.

Switching times resistive Figure 10.Switching times resistive

Figure 11.Switching times inductive

Figure 12.Switching times resistive

Electrical characteristics STD1802T4-A 2.2 Test circuits

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STD1802T4-A Package mechanical data

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3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK?

packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: https://www.wendangku.net/doc/02381208.html,

Package mechanical data STD1802T4-A

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STD1802T4-A Revision history

9/10

4 Revision history

Table 5.

Revision history

Date Revision

Changes

28-Jun-2007

1

Initial release.

STD1802T4-A

10/10Please Read Carefully:

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STD1802T4-A