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MCR101L-6-AB-T92-B中文资料

UNISONIC TECHNOLOGIES CO., LTD

MCR101L-6-AB-T92-B中文资料

MCR101 SCR

MCR101L-6-AB-T92-B中文资料

FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS

DESCRIPTION

PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment.

FEATURES

*Sensitive gate allows triggering by micro controllers and other logic circuits

*Blocking voltage to 600V

*On-state current rating of 0.8A RMS at 80°C *High surge current capability – 10A

*Minimum and maximum values of IGT, VGT and IH specified for ease of design

*Immunity to dV/dt – 20V/μsec minimum at 110°C *Glass-passivated surface for reliability and uniformity

*Pb-free plating product number: MCR101L

ORDERING INFORMATION

Order Number

Pin Assignment

Normal Lead Free Plating Package

1 2 3

Packing

MCR101-x-xx-T92-B MCR101L-x-xx-T92-B TO-92 G A C Tape Box MCR101-x-xx-T92-K MCR101L-x-xx-T92-K

TO-92 G A C Bulk

MCR101L-6-AB-T92-B中文资料

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT

MCR101-4200 MCR101-6400 Peak Repetitive Off-State Voltage(note) (T J =-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open) MCR101-8V DRM ,V RRM 600 V On-Sate RMS Current (Tc=80°C) 180° Condition Angles I T(RMS) 0.8 A Peak Non-Repetitive Surge Current

(1/2 cycle, Sine Wave, 60Hz, T J =25°C) I TSM 10 A

Circuit Fusing Considerations (t=8.3 ms) I 2t 0.415 A 2s

Forward Peak Gate Power (T A =25°C, Pulse Width ≤1.0μs) P GM 0.1 W Forward Average Gate Power (T A =25°C, t=8.3ms) P G(AV) 0.1 W Peak Gate Current – Forward (T A =25°C, Pulse Width ≤1.0μs) I GM 1 A Peak Gate Voltage – Reverse (T A =25°C, Pulse Width ≤1.0μs) V GRM 5 V Operating Junction Temperature @ Rated V RRM and V DRM T J -40 ~ +110 °C Storage Temperature T STG -40 ~ +150 °C

Note: V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate

voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL DATA

PARAMETER SYMBOL RATING UNIT

Thermal Resistance, Junction to Case θJC 75 °C/W Thermal Resistance, Junction to Ambient θJA 200 °C/W

ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise stated)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Tc=25°C 10

Peak Forward or Reverse Blocking Current Tc=125°C I DRM , I RRM V D =Rated V DRM and V RRM ; R GK =1k ? 100μA

ON CHARACTERISTICS

Peak Forward On-State Voltage (Note1) V TM I TM =1A Peak @ T A =25°C 1.7V Gate Trigger Current (Continuous

dc)(note2)

I GT V AK =7Vdc, R L =100?, T C =25°C 40 200μA

Tc=25 °C 0.5 5

Holding Current (note 3) Tc=-40 °C I H V AK =7Vdc, initiating current=20mA 10

mA

Tc=25°C 0.6 10

Latch Current Tc=-40 °C I L V AK =7V, Ig=200μA 15

mA

Tc=25 °C 0.62 0.8

Gate Trigger Current (continuous dc) (Note 2) Tc=-40 °C V GT V AK =7Vdc, R L =100? 1.2V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage dV/dt

V D =Rated V DRM , Exponential

Waveform, R GK =1000?, T J =110°C 20 35 V/μs Critical Rate of Rise of On-State Current di/dt I PK =20A , Pw=10μsec

diG/dt=1A/μsec, Igt=20mA

50A/μs

Notes: 1. Indicates Pulse Test Width ≤1.0ms, duty cycle ≤1% 2. R GK =1000? included in measurement.

3. Does not include R GK in measurement.

VOLTAGE CURRENT CHARACTERISTIC OF SCR

SYMBOL PARAMETER

V DRM Peak Repetitive Off Stat Forward Voltage

I DRM Peak Forward Blocking Current

V RRM Peak Repetitive Off State Reverse Voltage

I RRM Peak Reverse Blocking Current

V TM Peak On State Voltage

Current

I H Holding

+ Current

MCR101L-6-AB-T92-B中文资料

CLASSIFICATION OF I

GT

AC

AD

AA

RANK B

C

AB

RANGE 48~105μA 95~200μA8~16μA 14~21μA 19~25μA 23~52μA

TYPICAL CHARACTERISTICS

MCR101L-6-AB-T92-B中文资料

MCR101L-6-AB-T92-B中文资料

Junction Temperature, T J (℃)

G a t e T r i g g e r C u r r e n t (μA )

100-25704020

5090

-10525506595110

10

3060808020-40Figure 1. Typical Gate Trigger Current

versus Junction Temperature

Junction Temperature, T J (℃)

G a t e T r i g g e r V o l t a g e (V o l t s )

1.0-250.70.50.3

0.9-10525506595110

0.2

0.40.60.88020-40Figure 2. Typical Gate Trigger Voltage

versus Junction Temperature

Junction Temperature, T J (℃)H o l d i n g C u r r e n t (μA )

1000

-25-10525506595110

10

100

8020-40Figure 3. Typical Holding Current versus Junction Temperature

Junction Temperature, T J (℃)

1000

-25-105

25506595110

10

100

8020-40Figure 4. Typical Latching Current versus Junction Temperature

L a t c h i n g C u r r e n t (μA )

MCR101L-6-AB-T92-B中文资料

RMS On-State Current , I TRMS (AMPS)

M a x i m

u m A l l o w a b l e C a s e T e m p e r a t u r e , T C (℃)

1200.1

0.3

0.540800.4

0.2

Figure 5. Typical RMS Current Derating

Instantaneous On-State Voltage, V T (Volts)

0.81.11.4 2.02.32.6 3.23.5

2.91.70.2Figure 6. Typical On-State Characterstics

11010090706050

MCR101L-6-AB-T92-B中文资料