https://www.wendangku.net/doc/0e2204940.html, 1
11/29/00
IRFR220N IRFU220N
SMPS MOSFET
HEXFET ? Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
V DSS R DS(on) max (m ?)
I D
200V
600
5.0A
Typical SMPS Topologies
l Telecom 48V input Forward Converters
Parameter
Max.
Units
I D @ T C
= 25°C Continuous Drain Current, V
GS @ 10V 5.0I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 3.5A I DM
Pulsed Drain Current 20P D @T C = 25°C Power Dissipation 43W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage
± 20V dv/dt Peak Diode Recovery dv/dt 7.5
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 94048
Notes through are on page 10
D-Pak IRFR220N I-Pak IRFU220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
IRFR/U220N
Note: For the most current drawings please refer to the IR website at:
https://www.wendangku.net/doc/0e2204940.html,/package/