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NE76100M中文资料

PART NUMBER NE76100PACKAGE OUTLINE

00 (CHIP)SYMBOLS PARAMETERS AND CONDITIONS

UNITS MIN

TYP MAX NF OPT 1Noise Figure at V DS = 3 V, I D = 10 mA, f = 4 GHz dB 0.8 1.4

G A 1Associated Gain at V DS = 3 V, I D = 10 mA, f = 4 GHz dB 12.0P 1dB

Output Power at 1 dB Gain Compression Point, f = 4 GHz V DS = 3 V, I DS = 10 mA dBm 12.5V DS = 3 V, I DS = 30 mA dBm 15.0G 1dB

Gain at P 1dB , f = 4 GHz V DS = 3 V, I DS = 10 mA dB 11.5V DS = 3 V, I DS = 30 mA

dB 13.5I DSS Saturated Drain Current at V DS = 3 V, V GS = 0mA 3060100V P Pinch Off Voltage at V DS = 3 V, I D = 100 m A V -3.0-1.1-0.5g m Transconductance at V DS = 3 V, I D = 10 mA mS 2045I GSO Gate to Source Leak Current at V GS = -5 V μA 1.0

10R TH 2

Thermal Resistance

°C/W

190Notes:

1.RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples.

2.Chip mounted on an infinite heat sink.

DESCRIPTION

NE76100 is a high performance gallium arsenide metal semi-conductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity.The NE76100 is suitable for a wide variety of commercial and industrial applications.

NEC's stringent quality assurance and test procedures assure the highest reliability and performance.

GENERAL PURPOSE

GaAs MESFET

NE76100

FEATURES

?LOW NOISE FIGURE:

NF = 0.8 dB typical at f = 4 GHz ?HIGH ASSOCIATED GAIN:

G A = 12.0 dB typical at f = 4 GHz ?L G = 1.0 μm, W G = 400 μm

ELECTRICAL CHARACTERISTICS (T A = 25°C)

A s s o c i a t e d G a i n , G A (d

B )

O p t i m u m N o i s e F i g u r e , N F O P T (d B )

Frequency, f (GHz)

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY V DS = 3 V, I DS = 10 mA

California Eastern Laboratories

1 10 20

43.532.521.51

0.50

242118151296

FREQ.NF OPT G AΓOPT

(GHz)(dB)(dB)MAG ANG Rn/50

1.00.5518.00.90160.50

2.00.6015.00.82340.48 4.00.8012.00.70650.45 6.0 1.1510.00.60950.39 8.0 1.608.50.521220.38

10.0 2.107.50.501500.32

12.0 2.607.00.501710.27

V GS

-0.2

-0.4

-0.6

-0.8

-1.0

01234

100

NE76100

ABSOLUTE MAXIMUM RATINGS1(T A = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

V DS Drain to Source Voltage V5

V GD Gate to Drain Voltage V-6

V GS Gate to Source Voltage V-5

I DS Drain Current mA I DSS

T CH Channel Temperature°C175

T STG Storage Temperature°C-65 to +175

P T2Total Power Dissipation mW350

(

)

(

)

(

)

(

)

Notes:

1.Operation in excess of anyone of these parameters may result in

permanent damage.

2.Mounted on an infinite heat sink.

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(

)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

TYPICAL PERFORMANCE CURVES(T A = 25°C)

Ambient Temperature, T A (°C)Drain Current, I DS (mA)

Drain Current, I DS (mA)

Includes effects from wirebonds. See S-Parameter data for details.

TYPICAL NOISE PARAMETERS (T A = 25°C)

V DS = 3 V, I DS = 10 mA

NOISE FIGURE AND ASSOCIATED

GAIN vs. DRAIN CURRENT

V DS = 3 V, f = 4 GHz

TRANSCONDUCTANCE vs.

DRAIN CURRENT V DS = 3 V

Drain to Source Voltage, V DS (V)

0 25 50 75 100 125 150 175 200

400

350

300

250

200

150

100

2.5

1.5

0.5

0 10 20 30 40 50 60

G A

0 20 40 60 80 100

NE76100

FREQUENCY

S 11

S 21

S 12S 22

S 21MAG 1(GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)(dB)0.10.99-2.3 3.782178.20.00486.70.769-1.20.05211.630.10.20.999-4.5 3.779176.30.00786.40.769-2.30.03711.527.10.50.996-11.3 3.763170.90.01883.10.767-5.70.04511.523.11.00.986-22.5 3.707161.90.03676.90.759-11.40.07611.218.41.50.971-33.3 3.619153.10.05370.80.74716.80.11011.420.12.00.951-43.9 3.505144.70.06865.00.731-22.00.14510.917.13.00.905-63.6 3.233128.90.09354.50.694-31.50.21410.215.44.00.859-81.4 2.941114.60.11245.50.657-39.70.2819.414.25.00.818-97.3 2.662101.90.12637.90.624-46.80.3478.513.36.00.784-111.4 2.41190.30.13531.50.598-53.10.4107.612.57.00.759 -124.2 2.19079.80.14126.10.577-58.90.470 6.811.98.00.739 -135.6 1.99970.10.14521.60.562-64.20.526 6.011.49.00.726-146.0 1.83361.10.14817.70.552-69.30.578 5.310.910.00.718-155.4 1.68852.70.14914.30.547-74.20.626 4.510.511.00.713-164.0 1.56244.70.14911.40.545-79.00.669 3.910.212.00.711-172.0 1.44937.20.1498.80.545-83.70.708 3.29.913.00.712-179.3 1.34929.90.148 6.70.548-88.30.741 2.69.614.00.715173.9 1.25923.00.147 4.80.554-92.90.770 2.09.315.00.719167.5 1.17716.40.146 3.20.561-97.50.793 1.49.116.00.725161.6 1.10210.00.144 1.80.569-102.1 0.8110.88.817.00.732156.1 1.033 3.80.1420.70.579-106.70.8240.38.618.00.739150.90.968-2.10.141-0.20.589-111.20.831-0.38.419.00.747146.00.908-7.80.139-0.90.601-115.70.833-0.88.120.0

0.755

141.4

0.851

-13.4

0.138

-1.5

0.613

-120.1

0.830-1.4

7.9

Note:

1.Gain Calculations:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

2.S-parameters include bond wires as follows:GATE:TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 μm) LONG.DRAIN:TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 μm) LONG.SOURCE:TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 μm) LONG.WIRE:0.0007" (17.8 μm) DIA. GOLD.

TYPICAL SCATTERING PARAMETERS 2 (T A = 25°C)

V DS = 3 V, l DS = 10 mA

-j50

+180–

MAG =

|S 21||S 12|

K - 1 ).2(K ±

? = S 11 S 22 - S 21 S 12

When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|

NE76100

TYPICAL SCATTERING PARAMETERS 2 (T A = 25°C)

FREQUENCY

S 11S 21

S 12

S 22K S 21MAG 1(GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)(dB)0.10.999

-2.5 4.692178.00.00386.50.713-1.20.05313.431.40.20.999-5.1 4.668176.10.00786.20.712-2.50.03813.428.40.50.995-12.7 4.662170.30.01782.70.710-6.20.04713.424.41.00.983-25.2

4.572160.70.03376.20.701-12.20.08113.221.41.50.965-37.3 4.435151.50.04869.80.686-17.90.11712.919.72.00.943-48.8 4.261142.60.06163.80.669-23.30.15412.618.43.00.893-70.1 3.860126.50.08353.30.629-33.00.22711.716.74.00.845-88.8 3.451112.30.09844.70.592-41.10.29910.81

5.45.00.805-105.2 3.07899.70.10937.80.560-48.00.3689.814.5

6.00.774-119.5 2.75488.60.11732.20.536-54.10.4348.813.7

7.00.752-132.1 2.4777

8.50.12227.70.519-5

9.60.4967.913.18.00.736-143.3 2.24269.20.12523.90.507-64.80.5547.012.59.00.726-153.3 2.04260.60.12720.80.500-69.80.606 6.212.010.00.720-162.3 1.87052.50.12918.20.497-74.70.654 5.411.611.00.717-170.6 1.72244.90.13016.10.497-79.40.696 4.711.212.00.717-178.1 1.59237.70.13114.20.500-84.20.732 4.010.913.00.719174.9 1.47730.70.13112.70.505-88.80.762 3.410.514.00.722168.5 1.37424.10.13111.40.511-93.50.787 2.810.215.00.727162.5 1.28217.70.13110.30.519-98.10.805 2.29.916.00.733156.9 1.19711.50.1319.40.529-102.70.816 1.69.617.00.739151.6 1.120 5.60.1318.60.539-107.20.823 1.09.318.00.746146.7 1.049-0.20.1317.90.551-111.70.8230.49.019.00.754142.10.983-5.70.1327.40.563-116.20.818-0.18.720.0

0.761

137.7

0.921

-11.1

0.132

6.9

0.575

-120.6

0.808

-0.7

8.4

Note:

1.Gain Calculations:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

V DS = 3 V, l DS = 20 mA

-j50

+180–

MAG =

|S 21||S 12|

K - 1 ).2(K ±

? = S 11 S 22 - S 21 S 12

When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|

FREQUENCY

S 11

S 21

S 12

S 22

S 21MAG 1(GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)(dB)0.10.999-2.7 5.142178.00.00386.50.694-1.30.05414.232.00.20.999-5.4 5.137176.00.00686.10.693-2.50.03914.229.00.50.995-13.4 5.104169.90.01682.50.690-6.30.04914.225.01.00.982-26.6 4.995160.10.03175.70.680-12.50.08314.022.01.50.963-39.3 4.827150.60.04569.20.665-18.30.12013.720.32.00.939-51.4 4.619141.50.05863.20.647-23.70.15813.319.03.00.887-73.4 4.146125.20.07852.70.606-33.30.23312.417.34.00.840-92.5 3.676111.00.09244.40.569-41.20.30711.316.05.00.802-109.0 3.25698.60.10237.80.538-48.00.37810.315.16.00.773-123.3 2.89687.60.10832.60.516-53.90.4459.214.37.00.752-135.8 2.59477.60.11328.50.500-59.40.5088.313.68.00.738-146.8 2.34068.60.11625.10.490-64.50.5657.413.19.00.730-156.6 2.12560.10.11822.40.485-69.50.618 6.512.610.00.725-165.5 1.94152.20.12020.20.483-74.30.664 5.812.111.00.723-173.5 1.78344.70.12118.40.484-79.10.705 5.011.712.00.723179.1 1.64637.60.12216.80.487-83.80.739 4.311.313.00.726172.4 1.52430.80.12315.60.493-88.50.766 3.710.914.00.730166.1 1.41724.30.12414.50.500-93.20.787 3.010.615.00.735160.3 1.32018.00.12413.60.508-97.80.802 2.410.316.00.740154.8 1.23211.90.12512.90.518-102.50.810 1.89.917.00.747149.7 1.151 6.00.12612.20.529-107.00.812 1.29.618.00.754144.9 1.0770.40.12711.70.541-111.60.8080.69.319.00.761140.4 1.009-5.10.12811.20.553-116.10.8000.19.020.0

0.768

136.1

0.945

-10.4

0.129

10.8

0.566

-120.5

0.787-0.5

8.7

TYPICAL SCATTERING PARAMETERS 2 (T A = 25°C)

NE76100

Note:

1.Gain Calculations:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

V DS = 3 V, l DS = 30 mA

MAG =

|S 21||S 12|

K - 1 ).2(K ±

? = S 11 S 22 - S 21 S 12

When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|

-j50

+180–

FREQUENCY

S 11

S 21

S 12

S 22

S 21MAG 1(GHz)MAG ANG MAG ANG MAG ANG MAG ANG (dB)(dB)0.10.999-2.8 5.433177.90.00386.40.685-1.30.05414.732.40.20.999-5.6 5.428175.90.00686.00.684-2.50.03914.729.40.50.995-13.9 5.391169.70.01582.30.681-6.30.04914.625.41.00.981-27.5 5.267159.60.03075.50.671-12.5

0.08514.422.41.50.961-40.6 5.079150.00.04469.00.655-18.30.12314.120.72.00.937-53.0 4.846140.80.05562.90.637-23.70.16213.719.43.00.885-75.5 4.325124.40.07452.60.596-33.10.239

12.717.74.00.838-94.8 3.815110.20.08744.40.559-40.80.31311.616.45.00.800-111.3 3.36597.80.09638.10.530-47.40.38510.515.46.00.773-125.6 2.98486.90.10233.20.508-53.20.4539.514.77.00.753-138.0 2.66677.10.10729.40.494-58.50.5168.514.08.00.741-148.9 2.40068.10.11026.30.484-63.60.5737.613.49.00.733-158.6 2.17659.80.11223.90.480-68.60.625 6.812.910.00.728-167.3 1.98551.90.11421.90.479-73.40.670 6.012.411.00.727-175.2 1.82144.50.11520.30.480-78.20.709 5.212.012.00.728177.6 1.67937.50.11718.90.484-82.90.740 4.511.613.00.731170.9 1.55430.70.11817.80.490-87.70.765 3.811.214.00.734164.7 1.44224.30.11916.90.497-92.40.784 3.210.815.00.739159.0 1.34318.00.12016.20.506-97.10.795 2.610.516.00.745153.6 1.25212.00.12115.50.516-101.70.800 2.010.117.00.751148.6 1.170 6.20.12314.90.527-106.30.799 1.49.818.00.758143.9 1.0940.50.12414.40.538-110.90.7930.89.519.00.765139.4 1.024-4.90.12513.90.551-115.40.7820.29.120.0

0.772

135.2

0.959

-10.2

0.127

13.5

0.563

-119.9

0.767-0.4

8.8

NE76100

TYPICAL SCATTERING PARAMETERS 2 (T A = 25°C)

Note:

1.Gain Calculations:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

V DS = 3 V, l DS = 40 mA

-j50

+180–

MAG =

|S 21||S 12|

K - 1 ).2(K ±

? = S 11 S 22 - S 21 S 12

When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ? | - |S 11| - |S 22|2222 |S 12 S 21|

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NE76100

MODEL RANGE

Frequency:0.1 to 20 GHz

Bias:V DS = 3 V, I D = 10, 20, 30, 40 mA Date:

10/23/96

Parameter Units

capacitance picofarads inductance nanohenries resistance ohms

conductance millisiemans

time

picoseconds frequency

gigahertz

UNITS

SCHEMATIC

Parameters

3 V, 10 mA 3 V, 20 mA

3 V, 30 mA 3 V, 40 mA g 48 mS 63 mS 70 mS 76 mS t 5 pSec 4.5 pSec 4.5 pSec

4 pSec RDS 350 ohms 260 ohms 240 ohms 230 ohms CGS 0.4

5 pF 0.52 pF 0.57 pF 0.61pF CDG

0.07 pF

0.068 pF

0.065 pF

0.061 pF

BIAS DEPENDANT MODEL PARAMETERS

NE76100 LINEAR MODEL

SOURCE

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NE76100

PART NUMBER IDSS SELECTION NE7610030 to 100 mA (Standard)

NE76100N 30 to 60NE76100M

60 to 100

ORDERING INFORMATION

OUTLINE DIMENSIONS (Units in μm)

NE76100 (CHIP)

Chip Thickness: 140 μm

Note:

All dimensions are typical unless otherwise specified.

EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

? Headquarters ? 4590 Patrick Henry Drive ? Santa Clara, CA 95054-1817 ? (408) 988-3500 ? Telex 34-6393 ? FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ? Internet: https://www.wendangku.net/doc/0b2679335.html,

12/02/99DATA SUBJECT TO CHANGE WITHOUT NOTICE

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