BAT81S/82S/83S
Document Number 85512Rev. 1.7, 26-Feb-07
Vishay Semiconductors
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94 9367
Small Signal Schottky Diodes
Features
?Integrated protection ring against static discharge
?Low capacitance
?Low leakage current
?Low forward voltage drop ?Very low switching time ?Lead (Pb)-free component
?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
?General purpose and switching Schottky barrier diode
?HF-Detector ?Protection circuit
?Diode for low currents with a low supply voltage ?Small battery charger ?Power supplies
?DC/DC converter for notebooks
Mechanical Data
Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
T amb = 25°C, unless otherwise specified
Part
T ype differentiation
Ordering code
T ype Marking Remarks
BAT81S V R = 40 V BAT81S-TR or BAT81S-T AP BAT81S Tape and Reel/Ammopack BAT82S V R = 50 V BAT82S-TR or BAT82S-T AP BAT82S Tape and Reel/Ammopack BAT83S
V R = 60 V
BAT83S-TR or BAT83S-T AP
BAT83S
Tape and Reel/Ammopack
Parameter
T est condition
Part Symbol Value Unit Reverse voltage
BAT81S V R 40V BAT82S V R 50V BAT83S
V R 60V Forward continuous current I F 30mA Peak forward surge current t p ≤ 10 ms I FSM 500mA Repetitive peak forward current
t p ≤ 1 s
I FRM
150
mA
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Document Number 85512
Rev. 1.7, 26-Feb-07
BAT81S/82S/83S
Vishay Semiconductors Thermal Characteristics
T amb = 25°C, unless otherwise specified
Electrical Characteristics
T amb = 25°C, unless otherwise specified
Typical Characteristics
T amb = 25°C, unless otherwise specified
Parameter
Test condition
Symbol Value Unit Thermal resistance junction to ambient air l = 4 mm, T L = constant
R thJA 320K/W Junction temperature T j 125°C Storage temperature range
T stg
- 65 to + 150
°C
Parameter
Test condition
Symbol Min
Typ.
Max Unit Forward voltage
I F = 0.1 mA V F 330mV I F = 1 mA V F 410mV I F = 15 mA
V F 1000mV Reverse current V R = V Rmax
I R 200nA Diode capacitance
V R = 1 V , f = 1 MHz
C D
1.6
pF
Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature
Figure
2. Reverse Current vs. Junction Temperature 024
6
81012
14
25
50
75
100
125
150
T j - J u nction Temperat u re (°C)
15794
P R - R e v e r s e P o w e r D i s s i p a t i o n (m W )
0.1100
1000
25
5075100125150
1
10
15795
I - R e v e r s e C u r r e n t (μA )
R T j - J u nction Temperat u re (°C)Figure 3. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
0.51 1.5 2.0
I - F o r w a r d C
u r r e n t (m A )
V F - For w ard V oltage (V )
15796
F 0.1
1
10
100
1000
0.01
0.2
0.40.60.81.01.21.41.61.82.0
0.1110100
V R - Re v erse V oltage (V )
15797
C D - D i o d e C a p a c i t a n c e (p F )
BAT81S/82S/83S
Document Number 85512Rev. 1.7, 26-Feb-07
Vishay Semiconductors
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Package Dimensions in millimeters (inches): DO35
https://www.wendangku.net/doc/075845654.html, 4Document Number 85512
Rev. 1.7, 26-Feb-07
BAT81S/82S/83S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000
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Revision: 18-Jul-08
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Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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