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紫外线传感器GUVA-S12SD的应用资料

Features

Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness

High Responsivity & Low Dark Current

Applications

UV Index Monitoring UV-A Lamp Monitoring

Absolute Maximum Ratings

紫外线传感器GUVA-S12SD的应用资料

紫外线传感器GUVA-S12SD的应用资料

Symbol Unit T st ℃T op ℃V r,

紫外线传感器GUVA-S12SD的应用资料

max.V Reverse Voltage 5Storage Temperature Operating Temperature

90-30

85-40UV-A Sensor

GUVA-S12SD

Parameter Min.Max.Outline Diagrams and Dimensions

Remark

Cathode

Anode

r, max.I f,max.?P opt W/?T sol

Characteristics (at 25℃)

Symbol Min.Max.Unit I d 1?101

125

??I tc %/℃R A/W

λ

240

370??

Responsivity Curve

Photocurrent along UV Power

Caution

ESD can damage the device hence please avoid ESD

260

within 10 sec.

UVA Lamp, 1?/?

Test Conditions Typ.Responsivity Spectral Detection Range

Active area

λ = 350 ?, Vr = 0 V

10% of R

0.14

0.076

Photo Current Temperature Coefficient

UVA Lamp

1 UVI 210.08I ph 113 Dark Current Vr = 0.1 V Optical Source Power Range 0.1μUVA Lamp 100m Soldering Temperature

Parameter ※Notice: apply to us in the case that Optical Source Power is over 100?/?g Forward Current 1

紫外线传感器GUVA-S12SD的应用资料

ESD can damage the device hence please avoid ESD.