IRLL2703PBF中文资料
IRLL2703PBF
HEXFET ? Power MOSFET
PD - 95337
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
05/28/04
Description
l Surface Mount
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching
l Fully Avalanche Rated l
Lead-Free
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter
Typ.
Max.
Units
R θJA Junction-to-Amb. (PCB Mount, steady state)*90120R θJA
Junction-to-Amb. (PCB Mount, steady state)**
50
60
Thermal Resistance
°C/W
Parameter
Max.
Units
I D @ T A = 25°C Continuous Drain Current, V GS @ 10V** 5.5I D @ T A = 25°C Continuous Drain Current, V GS @ 10V* 3.9I D @ T A = 70°C Continuous Drain Current, V GS @ 10V* 3.1I DM
Pulsed Drain Current
16P D @T A = 25°C Power Dissipation (PCB Mount)** 2.1W P D @T A = 25°C Power Dissipation (PCB Mount)* 1.0W
Linear Derating Factor (PCB Mount)*8.3mW/°C
V GS Gate-to-Source Voltage
± 16V E AS Single Pulse Avalanche Energy 180mJ I AR Avalanche Current
3.9A E AR Repetitive Avalanche Energy * 0.1mJ dv/dt Peak Diode Recovery dv/dt
5.0
V/ns T J, T STG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
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Parameter
Min.Typ.Max.Units Conditions V (BR)DSS
Drain-to-Source Breakdown Voltage 30––––––V V GS = 0V, I D = 250μA
?V (BR)DSS /?T J
Breakdown Voltage Temp. Coefficient –––0.06–––V/°C Reference to 25°C, I D = 1mA ––––––0.045V GS = 10V, I D = 3.9A ––––––0.060?V GS = 5.0V, I D = 3.1A ––––––0.070V GS = 4.0V, I D = 2.0A V GS(th)Gate Threshold Voltage 1.0––– 2.4V V DS = V GS , I D = 250μA g fs Forward Transconductance 5.9––––––S V DS = 25V, I D = 2.3A ––––––25μA
V DS = 30V, V GS = 0V
––––––250V DS = 24V, V GS = 0V, T J = 125°C Gate-to-Source Forward Leakage ––––––100nA
V GS = 16V
Gate-to-Source Reverse Leakage ––––––-100V GS = -16V Q g Total Gate Charge
–––9.314I D = 2.3A Q gs Gate-to-Source Charge
––– 2.3 3.4nC V DS = 24V Q gd Gate-to-Drain ("Miller") Charge ––– 5.17.6V GS = 5.0V, See Fig. 6 and 9 t d(on)Turn-On Delay Time –––7.4–––V DD = 15V t r
Rise Time
–––24–––ns
I D = 2.3A
t d(off)Turn-Off Delay Time ––– 6.9–––R G = 6.2 ?t f Fall Time
–––14–––R D = 6.5 ?, See Fig. 10 C iss Input Capacitance –––530–––V GS = 0V C oss Output Capacitance
–––230–––pF V DS = 25V C rss
Reverse Transfer Capacitance
–––95–––? = 1.0MHz, See Fig. 5
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
I GSS R DS(on)Static Drain-to-Source On-Resistance I DSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I SD ≤ 2.3A , di/dt ≤ 150A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
Notes:
Starting T J = 25°C, L = 24 mH
R G = 25?, I AS = 3.9A. (See Figure 12)
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Parameter
Min.Typ.Max.Units
Conditions
I S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the I SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V SD
Diode Forward Voltage –––––– 1.0V T J = 25°C, I S = 2.3A, V GS = 0V t rr Reverse Recovery Time –––4263ns T J = 25°C, I F = 2.3A Q rr Reverse RecoveryCharge –––6294nC di/dt = 100A/μs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Source-Drain Ratings and Characteristics
16
3.9
A
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
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Fig 8. Maximum Safe Operating Area
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Forward Voltage
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit
V DS V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
V DD
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Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
I AS
Fig 12a. Unclamped Inductive Test Circuit
V DD
V DS
Current Sampling Resistors
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRLL2703PbF
SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches)
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SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)3.90 (.154)
1.85 (.072)1.65 (.065)
2.05 (.080)1.95 (.077)
12.10 (.475)11.90 (.469)
7.10 (.279)6.90 (.272)
1.60 (.062)1.50 (.059) TYP.
7.55 (.297)7.45 (.294)
7.60 (.299)7.40 (.292)
2.30 (.090)2.10 (.083)
16.30 (.641)15.70 (.619)
0.35 (.013)0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)12.80 (.504)
50.00 (1.969) MIN.
330.00(13.000) MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)11.90 (.469)
18.40 (.724) MAX.
14.40 (.566)12.40 (.488)
4
4
Data and specifications subject to change without notice.
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