STK0765
STK0765F
S e m i c o n d u c t o r
Power MOSFET Features
?Low Crss
?Low gate charge.
?Low leakage current
Ordering Information
Type NO. Marking Package Code
STK0765F STK0765
TO-220F-3L
STK0765F Absolute maximum ratings (T C=25℃)
Unit Characteristic Symbol
Rating
Drain-source voltage V DSS 650 V
Gate-source voltage V GSS±30 V
T C=25℃7 A
Drain current (DC) *I D
T C=100℃ 4.4 A
Drain current (Pulsed) *I DP 28 A
Drain power dissipation (Tc=25℃) P D 40 W Single pulsed avalanche energy ②E AS 420 mJ Avalanche current (Repetitive) ①I AR 5.2 A Repetitive avalanche energy ①E AR 14.7 mJ Junction temperature T J 150 ℃
Storage temperature range T stg -55~150 ℃
* Limited by maximum junction temperature
Thermal Resistance
Max
Units
Typ.
Characteristic Symbol
3.125
Thermal resistance junction-case R th(J-C) -
℃/W
Thermal resistance Junction-ambient R th(J-A) -
62.5
STK0765F
Electrical Characteristics (Tc=25°C)
Characteristic Symbol
Test Condition Min. Typ. Max.Unit
Drain-source breakdown voltage V (BR)DSS I D =250?, V GS =0 650 - - V Gate threshold voltage V GS(th) I D =250?, V DS = V GS 2.0 - 4.0 V Drain-source cut-off current I DSS V DS =650V , V GS =0 - - 10
μA Gate leakage current
I GSS V DS =0V , V GS =±30V
- -
±100 nA
Static drain-source on-resistance ④ R DS(on) V GS =10V , I D =
3.5A - - 1.2
? Forward transfer conductance ④ g fs
V DS =5V , I D = 3.5A 3.9 6.4 - S
Input capacitance C iss - 881 -
Output capacitance
C oss - 123 -
Reverse transfer capacitance C rss
V GS =0V , V DS =25V
f=1?
- 19 - pF Turn-on delay time t d(on) - 18 -
Rise time
t r - 19 - Turn-off delay time t d(off) - 72 - Fall time
t f
V DD =325V , I D =7A R G =25? Fig. 13 ③④ - 28 -
ns
Total gate charge Q g - 49 - Gate-source charge Q gs - 8.4 -
Gate-drain charge
Q gd
V DS
=520V , V GS
=10V ,
I D =7A Fig. 12 ③④
- 22.1 - nC
Source-Drain Diode Ratings and Characteristics (T C =25℃)
Characteristic Symbol Test Condition Min Typ Max Units
Source current (DC)
I S - - 7 Source current (Pulsed) ① I SP
Integral reverse diode
in the MOSFET - - 28
A
Diode forward voltage ④ V SD V GS =0V , I S =7A - - 1.4 V Reverse recovery time t rr - 320 - ns Reverse recovery charge
Q rr
I S =7A, V GS =0V
dI S /dt=100A/?
- 2.4 -
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature ② L=15.7mH, I AS =7A, V DD =50V , R G =27?
③ Pulse Test : Pulse width ≤400?, Duty cycle ≤2% ④ Essentially independent of operating temperature
STK0765F
Fig. 1 I D - V DS
Electrical Characteristic Curves
STK0765F Fig. 7 V(BR)DSS -T C Fig. 8 Safe Operating Area
STK0765F
Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Switching Time Test Circuit & Waveform
Fig. 14 E AS
Test Circuit & Waveform
Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp..
Specifications mentioned in this publication are subject to change without notice.