PN2222A_04中文资料
Absolute Maximum Ratings * T a =25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T a =25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter
Value Units V CEO Collector-Emitter Voltage 40V V CBO Collector-Base Voltage 75V V EBO Emitter-Base Voltage 6.0V I C Collector Current
1.0A T STG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.Max.
Units Off Characteristics BV (BR)CEO Collector-Emitter Breakdown Voltage *I C = 10mA, I B = 040V BV (BR)CBO Collector-Base Breakdown Voltage I C = 10μA, I E = 075V BV (BR)EBO Emitter-Base Breakdown Voltage I E = 10μA, I C = 0
6.0
V I CEX Collector Cutoff Current V CE = 60V, V EB(off) = 3.0V 10nA I CBO Collector Cutoff Current V CB = 60V, I E = 0
V CB = 60V, I E = 0, T a = 125°C 0.0110μA μA I EBO Emitter Cutoff Current V EB = 3.0V, I C = 010μA I BL Base Cutoff Current V CE = 60V, V EB(off) = 3.0V 20μA
On Characteristics
h FE
DC Current Gain
I C = 0.1mA, V CE = 10V I C = 1.0mA, V CE = 10V I C = 10mA, V CE = 10V
I C = 10mA, V CE = 10V, T a = -55°C I C = 150mA, V CE = 10V *I C = 150mA, V CE = 10V *I C = 500mA, V CE = 10V *355075351005040300
V CE(sat)Collector-Emitter Saturation Voltage *I C = 150mA, V CE = 10V I C = 500mA, V CE = 10V 0.31.0V V V BE(sat)
Base-Emitter Saturation Voltage *
I C = 150mA, V CE = 10V I C = 500mA, V CE = 10V
0.6 1.22.0
V V
NPN General Purpose Amplifier
?This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.?Sourced from process 19.
PN2222A MMBT2222A
PZT2222A
E B C
TO-92
SOT-23
SOT-223
Mark:1P
C
B
E
E B
C
C
Electrical Characteristics Ta=25°C unless otherwise noted (Continued)
Thermal Characteristics T a =25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm 2.
Spice Model
NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6Vtf = 1.7 Xtf = 3 Rb = 10)
Symbol Parameter Test Condition
Min.Max.
Units Small Signal Characteristics f T Current Gain Bandwidth Product I C = 20mA, V CE = 20V, f = 100MHz 300
MHz C obo Output Capacitance V CB = 10V, I E = 0, f = 1MHz 8.0pF C ibo Input Capacitance
V EB = 0.5V, I C = 0, f = 1MHz 25pF rb’C c Collector Base Time Constant I C = 20mA, V CB = 20V, f = 31.8MHz 150pS NF Noise Figure
I C = 100μA, V CE = 10V,R S = 1.0K ?, f = 1.0KHz
4.0dB Re(h ie )
Real Part of Common-Emitter High Frequency Input Impedance I C = 20mA, V CE = 20V, f = 300MHz
60?
Switching Characteristics t d Delay Time V CC = 30V, V EB(off) = 0.5V, I C = 150mA, I B1 = 15mA 10ns t r Rise Time 25ns t s Storage Time V CC = 30V, I C = 150mA,I B1 = I B2 = 15mA
225ns t f
Fall Time
60
ns
Symbol Parameter
Max.
Units PN2222A *MMBT2222A
**PZT2222A P D Total Device Dissipation Derate above 25°C
6255.03502.8
1,0008.0
mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
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Datasheet Identification Product Status Definition
Advance Information
Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
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