NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V , Logic Level
N?Channel SOT?223
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
?Pb?Free Packages are Available
Applications
?Power Supplies ?Converters
?Power Motor Controls ?
Bridge Circuits
MAXIMUM RATINGS (T
= 25°C unless otherwise noted)
0.995 in 2).
2.When surface mounted to an FR4 board using minimum recommended pad size, 2?2.4 oz. (Cu. Area 0.272 in 2).
https://www.wendangku.net/doc/068421798.html,
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATION
Preferred devices are recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
SWITCHING CHARACTERISTICS
4.Switching characteristics are independent of operating junction temperatures.
Figure 5. On?Resistance Variation with
Temperature
Figure 6. Drain?to?Source Leakage Current
versus Voltage
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )
T J , JUNCTION TEMPERATURE (°C)R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
?50
50250?2575125100150V DS, DRAIN?TO?SOURCE VOLTAGE (VOLTS)
I D , D R A I N C U R R E N T (A M P S )
175
10010.1
0.001
100
10
1
700500400C , C A P A C I T A N C E (p F )
300
200
S )
t , T I M E (n s )
Figure 11. Maximum Rated Forward Biased
Safe Operating Area V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T J , STARTING JUNCTION TEMPERATURE (°C)
I D , D R A I N C U R R E N T (A M P S )
0.010********
100
0.1
100
10
1
0.1
0.001
1000
r (t ), E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )
t, TIME (s)
Figure 13. Thermal Response
10
1
0.01
0.0001
0.00001
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
PACKAGE DIMENSIONS
STYLE 3:PIN 1.
GATE 2.DRAIN 3.SOURCE 4.
DRAIN
DIM A MIN MAX MIN MAX MILLIMETERS 0.2490.263 6.30 6.70INCHES
B 0.1300.145 3.30 3.70
C 0.0600.068 1.50 1.75
D 0.0240.0350.600.89F 0.1150.126 2.90 3.20G 0.0870.094 2.20 2.40H 0.00080.00400.0200.100J 0.0090.0140.240.35K 0.0600.078 1.50 2.00L 0.0330.0410.85 1.05M 0 10 0 10 S 0.2640.287 6.707.30
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198
2.
2.CONTROLLING DIMENSION: INCH.
____SOT?223 (TO?261)CASE 318E?04
ISSUE K
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SOT?223
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