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MC4166DY规格书

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FEATURES

?Halogen-free

?TrenchFET ? Power MOSFET

?100 % R g and UIS Tested APPLICATIONS

? Low-Side DC/DC Conversion

- Notebook PC - Gaming

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)30

0.0039 at V GS = 10 V 30.521.5 nC

0.0055 at V GS = 4.5 V

25.6

Notes:

a.Based on T C = 25 °C.

b.

Surface Mounted on 1" x 1" FR4 board.c.t = 10 s.

d.Maximum under Steady State conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter S

ymbol Limit Unit

Drain-Source Voltage V DS 30

V

Gate-Source Voltage V GS ± 20

Continuous Drain Current (T J = 150 °C)T C = 25 °C I D

30.5A

T C = 70 °C 24.5

T A = 25 °C 20.5b, c T A = 70 °C 16.5b, c

Pulsed Drain Current I DM 70

Continuous Source-Drain Diode Current

T C = 25 °C I S 5.9

T A = 25 °C 2.7b, c

Single Pulse Avalanche Current L = 0.1 mH

I AS 30

Avalanche Energy E AS 45

mJ Maximum Power Dissipation T C = 25 °C P D 6.5W

T C = 70 °C 4.2

T A = 25 °C 3.0b, c T A = 70 °C 1.9b, c

Operating Junction and Storage T emperature Range T J , T stg - 55 to 150

°C THERMAL RESISTANCE RATINGS

Parameter S

ymbol Typical Maximum Unit

Maximum Junction-to-Ambient b, d

t ≤ 10 s R thJA 3441°C/W

Maximum Junction-to-Foot (Drain)Steady State R thJF https://www.wendangku.net/doc/0d8731595.html,

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Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter S

ymbol Test Conditions Min. Typ.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 μA

30

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA

31mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5.4

Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 μA 1.2 2.4V Gate-Source Leakage

I GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V 1μA V DS = 30 V, V GS = 0 V, T J = 55 °C

10

On-State Drain Current a

I D(on) V DS ≥ 5 V , V GS = 10 V 30

A Drain-Source On-State Resistance a R DS(on)V GS = 10 V, I D = 15 A 0.00320.0039ΩV GS = 4.5 V , I D = 10 A 0.00450.0055

Forward T ransconductance a g fs

V DS = 15 V , I D = 15 A

65

S

Dynamic b

Input Capacitance C iss V DS = 15 V , V GS = 0 V , f = 1 MHz

2730pF

Output Capacitance

C oss 540Reverse Transfer Capacitance C rss 205Total Gate Charge Q g V DS = 15 V , V GS = 10 V , I

D = 10 A 42.565nC V DS = 15 V , V GS = 4.5 V , I D = 10 A 21.533

Gate-Source Charge Q gs 6.9Gate-Drain Charge Q gd 7.1Gate Resistance R g f = 1 MHz

0.2

0.8 1.6Ω

Turn-On Delay Time t d(on) V DD = 15 V , R L = 1.5 Ω

I D ? 10 A, V GEN = 4.5 V , R g = 1 Ω

3050ns Rise Time

t r 1935Turn-Off Delay Time t d(off)

3560Fall Time

t f 1530Turn-On Delay Time t d(on) V DD = 15 V , R L = 1.5 Ω I D ? 10 A, V GEN = 10 V , R g = 1 Ω

12

24Rise Time

t r 918Turn-Off Delay Time t d(off) 2950Fall Time

t f

9

18Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 5.9A Pulse Diode Forward Current a I SM 70Body Diode Voltage

V SD I S = 3 A

0.74 1.1V Body Diode Reverse Recovery Time t rr I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C

28

55ns Body Diode Reverse Recovery Charge Q rr 2142

nC Reverse Recovery Fall Time t a 15ns

Reverse Recovery Rise Time

t b 13

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Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25

Source-Drain Diode Forward Voltage

Threshold Voltage

Single Pulse Power

Safe Operating Area, Junction-to-Ambient

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TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

Power Derating, Junction-to-Foot

Power, Junction-to-Ambient

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TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Freescale maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see .

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DIM

MILLIMETERS INCHES

Min Max Min Max

A 1.35 1.750.0530.069

A10.100.200.0040.008

B0.350.510.0140.020

C0.190.250.00750.010

D 4.80 5.000.1890.196

E 3.80 4.000.1500.157

e 1.27 BSC0.050 BSC

H 5.80 6.200.2280.244

h0.250.500.0100.020

L0.500.930.0200.037

q0°8°0°8°

S0.440.640.0180.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

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TrenchFET ? Power MOSFETs

Application Note 808

Mounting LITTLE FOOT ?, SO-8 Power MOSFETs

A P P L I C A T I O N N O T E

1

Wharton McDaniel

Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.

See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawin g Access for Freescale MOSFETs, (), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package.

In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board.

Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading

Figure 2. Dual MOSFET SO-8 Pad Pattern

With Copper Spreading

The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose.

Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically.A final item to keep in mind is the width of the power traces.The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.

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Freescale Si4166DY/MC4166DY RECOMMENDED MINIMUM PADS FOR SO-8

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1

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Freescale Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y,“Freescale”), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Freescale makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicab le law, freescale disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Except as expressly indicated in writing, freescale products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freescale product co uld result in personal injury or death.Customers using or selling freescale products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold freescale and it s distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufact ure of the part. Please contact authorized freescale personnel t o obtain written terms and conditions regarding products designed for such applications.

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Freescale

Si4166DY/ MC4166DY

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