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HN1C05FE中文资料

HN1C05FE中文资料
HN1C05FE中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN1C05FE

Low Frequency Amplifier Applications Muting Application Switching Application

z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.)

:@ I C = 10mA/ I B = 0.5mA

z High Collector Current :IC=400mA(Max.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic Symbol Rating Unit

Collector-base voltage V CBO 15 V Collector-emitter voltage V CEO

12 V Emitter-base voltage V EBO

5 V Collector current I C 400 mA

Base current

I B 50 mA Collector power dissipation P C * 100 mW Junction temperature T j 150 °C

Storage temperature range

T stg

?55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

* :Total rating.

Marking Equivalent Circuit (Top View)

JEDEC ―

JEITA ―

TOSHIBA 2-2N1G

Weight: 3.0 mg (typ.) Unit: mm

1

2

3

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristic Symbol

Test Condition Min Typ. Max Unit

Collector cut-off current I CBO V CB =15V, I E = 0 ― ― 100 nA Emitter cut-off current I EBO V EB = 5V, I C = 0 ― ― 100 nA DC current gain h FE (Note)

V CE = 2V, I C = 10mA

300

― 1000

V CE (sat)(1) I C = 10mA, I B = 0.5mA ― 15 30

Collector-emitter saturation voltage V CE (sat)(2) I C = 200mA, I B = 10mA ― 110 250 mV

Collector-emitter saturation voltage V BE(sat) V CE = 200mA, I C = 10mA ― 0.87 1.2 V Transition frequency f T V CE = 2V, I C = 10mA ― 130 ― MHz Collector output capacitance C ob V CB = 10V, I E = 0, f = 1MHz ― 4.2 ― pF "ON" resistance

R on

I B = 1mA,V in =1V rms ,f=1kHz ― 0.9 ―

Ω

Turn on time

t on

― 85 ―

Storage time

t stg

― 170 ―

Switching time Fall down time

t f

Duty cycle < = 2% I B1 = ? I B2 = 5 mA

― 40 ― ns

(Note) h FE Classifications A:300~600, B:500~1000

AMBIENT TEMPERATURE Ta (°C)

P C* – Ta

C

O

L

L

E

C

T

O

R

P

O

W

E

R

D

I

S

S

I

P

A

T

I

O

N

P

C

(

m

W

)

200

0 175

125

100

50 150

75

25

150

50

100

*:Total Rating

RESTRICTIONS ON PRODUCT USE

20070701-EN GENERAL ?The information contained herein is subject to change without notice.

?TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.

? The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.

?The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.

? The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.

? Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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