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MUBW10-12A7中文资料

MUBW10-12A7中文资料

Converter - Brake - Inverter Module

MUBW10-12A7中文资料

(CBI2)

Symbol Conditions Maximum Ratings V

RRM

1600V

I FAV T

C

= 80°C; sine 180°19A

I DAVM T

C

= 80°C; rectangular; d = 1/318A

I FSM T

VJ

= 25°C; t = 10 ms; sine 50 Hz160A

P

tot T

C

= 25°C85W

Symbol Conditions Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.typ.max.

V

F I

F

= 10 A; T

VJ

= 25°C 1.3 1.6V

T

VJ

= 125°C 1.3V

I R V

R

= V

RRM

;T

MUBW10-12A7中文资料

VJ

= 25°C0.1mA

T

VJ

= 125°C1mA

t rr V

R

= 100 V;I

F

= 10 A; di/dt = -10 A/μs1μs

R

thJC (per diode) 1.47K/W

Three Phase Brake Chopper Three Phase Rectifier Inverter

V

RRM = 1600V V

CES

= 1200 V V

CES

= 1200 V

I DAVM = 26 A I

C25

= 20 A I

C25

= 20 A

I FSM = 160 A V

CE(sat)

= 2.3 V V

CE(sat)

= 2.3 V

1

5

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

IXYS reserves the right to change limits, test conditions and dimensions.

MUBW10-12A7中文资料

8

9

Application: AC motor drives with

q Input from single or three phase grid

q Three phase synchronous or

asynchronous motor

q electric braking operation

Features

q High level of integration - only one power

semiconductor module required for the

whole drive

q Fast rectifier diodes for enhanced EMC

behaviour

q NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

q Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

q Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

q Temperature sense included

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Symbol Conditions Maximum Ratings

V

CES T

VJ

= 25°C to 150°C1200V

V

GES

Continuous± 20V

V

GEM

Transient± 30V

I

C25T

C

= 25°C20A

I

C80T

C

= 80°C15A

RBSOA V

GE = ±15 V; R

G

= 82 ?; T

VJ

= 125°C I

CM

= 20A

Clamped inductive load; L = 100 μH V

CEK ≤ V

CES

t SC V

CE

= 720 V; V

GE

= ±15 V; R

G

= 82 ?; T

VJ

= 125°C10μs

(SCSOA)non-repetitive

P

tot T

C

= 25°C105W

Symbol Conditions Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.typ.max.

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Symbol Conditions Maximum Ratings

I

F25

T

C

= 25°C17A

I

F80

T

C

= 80°C11A

Equivalent Circuits for Simulation

Conduction

D11 - D16

Rectifier Diode (typ. at T

J

= 125°C)

V

= 1.11 V; R

= 19 m?

T1 - T6 / D1 - D6

IGBT (typ. at V

GE

= 15 V; T

J

= 125°C)

V

= 1.32V; R

= 131 m?

Free Wheeling Diode (typ. at T

J

= 125°C)

V

= 1.39 V; R

= 56 m?

T7 / D7

IGBT (typ. at V

GE

= 15 V; T

J

= 125°C)

V

= 1.32 V; R

= 131 m?

Free Wheeling Diode (typ. at T

J

= 125°C)

V

= 1.39 V; R

= 56 m?

Thermal Response

D11 - D16

Rectifier Diode (typ.)

C

th1

= 0.093 J/K; R

th1

= 1.212 K/W

C

th2

= 0.778 J/K; R

th2

= 0.258K/W

T1 - T6 / D1 - D6

IGBT (typ.)

C

th1

= 0.09 J/K; R

th1

= 0.954 K/W

C

th2

= 0.809J/K; R

th2

= 0.246 K/W

Free Wheeling Diode (typ.)

C

th1

= 0.043 J/K; R

th1

= 2.738 K/W

C

th2

= 0.54 J/K; R

th2

= 0.462 K/W

T7 / D7

IGBT (typ.)

C

th1

= 0.09 J/K; R

th1

= 0.954 K/W

C

th2

= 0.809 J/K; R

th2

= 0.246 K/W

Free Wheeling Diode (typ.)

C

th1

= 0.043 J/K; R

th1

= 2.738 K/W

C

th2

= 0.54 J/K; R

th2

= 0.462 K/W

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Symbol Conditions Maximum Ratings

V CES T VJ = 25°C to 150°C 1200V V GES Continuous ± 20V V GEM Transient ± 30V I C25T C = 25°C 20A I C80T C = 80°C

15

A RBSOA V GE = ±15 V; R G = 82 ?; T VJ = 125°C I CM = 20A Clamped inductive load; L = 100 μH

V CEK ≤ V CES

t SC

V CE = 720 V; V GE = ±15 V; R G = 82 ?; T VJ = 125°C 10μs (SCSOA)non-repetitive P tot T C = 25°C 105

W

Symbol

Conditions

Characteristic Values

MUBW10-12A7中文资料

Symbol Conditions Maximum Ratings

V RRM T VJ = 25°C to 150°C 1200V I F25T C = 25°C 17A I F80

T C = 80°C 11

A

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Symbol Conditions Characteristic Values

MUBW10-12A7中文资料

Dimensions in mm (1 mm = 0.0394")

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

01020

30

40500

100

200

300

4005000.00.4

0.8

1.21.6I F

A P tot W K/W Z thJC

Fig. 41Fig. 6Fig. 1

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

1

23456701234567

5

10

15

202530V CE

V V CE

A V G

-di/dt

4

6

8

10

12

1416V V GE

I 012

34

V V F

I F

Fig. 7Typ. output characteristics Fig. 8Typ. output characteristics

Fig. 9Typ. transfer characteristics

Fig. 10Typ. forward characteristics of

free wheeling diode

Fig. 11Typ. turn on gate charge

Fig. 12Typ. turn off characteristics of

free wheeling diode

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Fig. 17Reverse biased safe operating area

Fig. 18Typ. transient thermal impedance

RBSOA

0.000010.00010.001

0.010.1

110

200400600

800100012001400V CE

t

s V

MUBW10-12A7中文资料

Fig. 19Typ. output characteristics

Fig. 20Typ. forward characteristics of

free wheeling diode

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

MUBW10-12A7中文资料

Fig. 23Typ. transient thermal impedance

Fig. 24Typ. thermistorresistance versus

temperature

1

2

3

456V V CE

I 012

3

4

5101520

2530V

V F

I F

A 0.0

0.51.01.52.0

2.5E off mJ t

0.000010.00010.001

0.01

0.1

1

10

0.0001

0.001

0.010.1110t

s Z thJC

25

50

75

100

125150

T

°C