RB520G-30中文资料

Diodes

1/2

Schottky barrier diode

RB520G-30

z Applications

Rectifying small power.

z Features

1) Ultra small mold type. (VMD2) 2) High reliability .

z Construction

Silicon epitaxial planar z External dimensions (Unit : mm)

z Absolute maximum ratings (T a=25°C)

z Electrical characteristics (T a=25°C)

Parameter

Symbol Min.Typ.Max.Unit Conditions

V F I R

??

??

0.450.5

V μA

I F =10mA V R =10V

? Please pay attention to static electricity when handling.

Forward voltage Reverse current

Diodes

2/2

z Electrical characteristic curves (T a=25°C)

Fig.1 Forward characteristics

F O R W A R D C U R R E N T : I F (m A )

FORWARD VOLTAGE : V F (mV)

Fig.2 Reverse characteristics

R E V E R S E C U R R E N T : I R (n A )

REVERSE VOLT AGE : V R (V)

Fig. 3 Capacotance between terminals characteristics

10152552030

110

100

REVERSE VOLTAGE : V R (V)

C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )

Appendix

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0