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M27C4001-70F6TR中文资料

M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM

s5V ± 10% SUPPLY VOLTAGE in READ OPERATION

s ACCESS TIME: 35ns

s LOW POWER CONSUMPTION:

–Active Current 30mA at 5MHz

–Standby Current 100μA

s PROGRAMMING VOLTAGE: 12.75V ± 0.25V s PROGRAMMING TIME: 100μs/word

s ELECTRONIC SIGNATURE

–Manufacturer Code: 20h

–Device Code: 41h

DESCRIPTION

The M27C4001 is a 4 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro-processor systems requiring large programs and is organised as 524,288 by 8 bits.

The FDIP32W (window ceramic frit-seal package) and LCCC32W (leadless chip carrier package) have a transparent lid which allow the user to ex-pose the chip to ultraviolet light to erase the bit pat-tern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C4001 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages.

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November 2000

M27C4001

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Table 1. Signal Names

A0-A18Address Inputs Q0-Q7

Data Outputs E Chip Enable G Output Enable V PP Program Supply V CC Supply Voltage V SS

Ground

M27C4001

Table 2. Absolute Maximum Ratings (1)

Symbol Parameter Value Unit T A Ambient Operating Temperature (3)–40 to 125 °C T BIAS Temperature Under Bias–50 to 125 °C T STG Storage Temperature–65 to 150 °C V IO (2)Input or Output Voltage (except A9)–2 to 7 V V CC Supply Voltage–2 to 7 V V A9 (2)A9 Voltage–2 to 13.5V V PP Program Supply Voltage–2 to 14V Note: 1.Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-ity documents.

2.Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC

voltage on Output is V CC +0.5V with possible overshoot to V CC +2V for a period less than 20ns.

3.Depends on range.

Table 3. Operating Modes (1)

Mode E G A9V pp Q7 - Q0 Read V IL V IL X V CC or V SS Data Out Output Disable V IL V IH X V CC or V SS Hi-Z Program V IL Pulse V IH X V PP Data In Verify V IH V IL X V PP Data Out Program Inhibit V IH V IH X V PP Hi-Z Standby V IH X X V CC or V SS Hi-Z Electronic Signature V IL V IL V ID V CC Codes Note: 1.X = V IH or V IL, V ID = 12V ± 0.5V.

Table 4. Electronic Signature

Identifier A0Q7Q6Q5Q4Q3Q2Q1Q0Hex Data Manufacturer’s Code V IL0010000020h Electronic Signature V IH010*******h

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M27C4001

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DEVICE OPERATION

The operating modes of the M27C4001 are listed in the Operating Modes table. A single power sup-ply is required in the read mode. All inputs are TTL levels except for V PP and 12V on A9 for Electronic Signature.Read Mode

The M27C4001 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection.Output Enable (G) is the output control and should be used to gate data to the output pins, indepen-dent of device selection. Assuming that the ad-

dresses are stable, the address access time (t AVQV (t ELQV ). Data is available at the output after a delay of t GLQV ble for at least t AVQV -t GLQV . Standby Mode

The M27C4001 has a standby mode which reduc-es the supply current from 30mA to 100μA. The M27C4001 is placed in the standby mode by ap-the standby mode, the outputs are in a high imped-Table 5. AC Measurement Conditions

High Speed

Standard Input Rise and Fall Times ≤ 10ns ≤ 20ns Input Pulse Voltages

0 to 3V 0.4 to 2.4V Input and Output Timing Ref. Voltages

1.5V

0.8 and 2V

Table 6. Capacitance (1) (T A = 25 °C, f = 1 MHz)

Note: 1.Sampled only, not 100% tested.

Symbol Parameter

Test Condition

Min

Max Unit C IN Input Capacitance V IN = 0V 6pF C OUT

Output Capacitance

V OUT = 0V

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M27C4001

Table 7. Read Mode DC Characteristics (1)

(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )

Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .

2.Maximum DC voltage on Output is V CC +0.5V.

Table 8A. Read Mode AC Characteristics (1)

(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )

Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP

2.Sampled only, not 100% tested.

3.Speed obtained with High Speed AC measurement conditions.

Symbol Parameter

Test Condition Min

Max Unit I LI Input Leakage Current 0V ≤ V IN ≤ V CC ±10μA I LO Output Leakage Current 0V ≤ V OUT ≤ V CC ±10μA I CC Supply Current

E = V IL , G = V IL ,I OUT = 0mA, f = 5MHz

30mA I CC1Supply Current (Standby) TTL E = V IH 1mA I CC2Supply Current (Standby) CMOS E > V CC – 0.2V 100μA I PP Program Current V PP = V CC

10μA V IL Input Low Voltage –0.30.8V V IH (2)Input High Voltage 2V CC + 1V V OL Output Low Voltage I OL = 2.1mA 0.4

V V OH

Output High Voltage TTL I OH = –400μA 2.4V Output High Voltage CMOS

I OH = –100μA

V CC – 0.7V

Symbol

Alt

Parameter

Test Condition

M27C4001

Unit

-35 (3)-45 (3)-55 (3)Min

Max Min

Max t AVQV t ACC Address Valid to Output Valid E = V IL , G = V IL

354555ns t ELQV t CE Chip Enable Low to Output Valid

G = V IL 354555ns t GLQV t OE Output Enable Low to Output Valid E = V IL 202530ns t EHQZ (2)t DF Chip Enable High to Output Hi-Z

G = V IL 030030030ns t GHQZ (2)t DF Output Enable High to Output Hi-Z

E = V IL 030

030

ns t AXQX

t OH

Address Transition to Output Transition

E = V IL , G = V IL

00ns Two Line Output Control

Because EPROMs are usually used in larger memory arrays, this product features a 2 line con-trol function which accommodates the use of mul-tiple memory connection. The two line control function allows:

a.the lowest possible memory power dissipation,

https://www.wendangku.net/doc/0b17356538.html,plete assurance that output bus contention will not occur.

For the most efficient use of these two control lines, E should be decoded and used as the prima-made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselect-ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.

M27C4001

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System Considerations

The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, I CC , has three seg-ments that are of interest to the system designer:the standby current level, the active current level,and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line

output control and by properly selected decoupling capacitors. It is recommended that a 0.1μF ceram-ic capacitor be used on every device between V CC and V SS . This should be a high frequency capaci-tor of low inherent inductance and should be placed as close to the device as possible. In addi-tion, a 4.7μF bulk electrolytic capacitor should be used between V CC and V SS for every eight devic-es. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.

Table 8B. Read Mode AC Characteristics (1)

(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )

Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .

2.Sampled only, not 100% tested.

Symbol

Alt

Parameter

Test Condition

M27C4001

Unit

-70-80/-90-10/-12/-15Min

Max Min

Max t AVQV t ACC Address Valid to Output Valid E = V IL , G = V IL

7080100ns t ELQV t CE Chip Enable Low to Output Valid

G = V IL 7080100ns t GLQV t OE Output Enable Low to Output Valid E = V IL 354050ns t EHQZ (2)t DF Chip Enable High to Output Hi-Z

G = V IL 030030030ns t GHQZ (2)t DF Output Enable High to Output Hi-Z

E = V IL 030

030

ns t AXQX

t OH

Address Transition to Output Transition

E = V IL , G = V IL

000ns

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M27C4001

Table 9. Programming Mode DC Characteristics (1)

(T A = 25 °C; V CC = 6.25V ± 0.25V; V PP = 12.75V ± 0.25V)

Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .

Table 10. Programming Mode AC Characteristics (1)(T A = 25 °C; V CC = 6.25V ± 0.25V; V PP = 12.75V ± 0.25V)

Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .

2.Sampled only, not 100% tested.

Symbol Parameter

Test Condition Min

Max Unit I LI Input Leakage Current 0 ≤ V IN ≤ V CC

±10μA I CC Supply Current 50mA I PP Program Current E = V IL

50mA V IL Input Low Voltage –0.30.8V V IH Input High Voltage 2

V CC + 0.5

V V OL Output Low Voltage I OL = 2.1mA 0.4

V V OH Output High Voltage TTL I OH = –400μA

2.4V V ID

A9 Voltage

11.5

12.5

Symbol Alt Parameter

Test Condition

Min Max

Unit t AVEL t AS Address Valid to Chip Enable Low 2μs t QVEL t DS Input Valid to Chip Enable Low 2μs t VPHEL t VPS V PP High to Chip Enable Low 2μs t VCHEL t VCS V CC High to Chip Enable Low 2μs t ELEH t PW Chip Enable Program Pulse Width 95105μs t EHQX t DH Chip Enable High to Input Transition

2μs t QXGL t OES Input Transition to Output Enable Low

μs t GLQV t OE Output Enable Low to Output Valid 100ns t GHQZ t DFP Output Enable High to Output Hi-Z 0130ns t GHAX

t AH

Output Enable High to Address Transition

Programming

When delivered (and after each erasure for UV EPROM), all bits of the M27C4001 are in the ’1’state. Data is introduced by selectively program-ming ’0’s into the desired bit locations. Although only ’0’s will be programmed, both ’1’s and ’0’s can be present in the data word. The only way to change a ’0’ to a ’1’ is by die exposure to ultraviolet

light (UV EPROM). The M27C4001 is in the pro-gramming mode when V PP input is at 12.75V, G is at V IH and E is pulsed to V IL . The data to be pro-grammed is applied to 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. V CC is specified to be 6.25V ± 0.25V.

M27C4001

8/17PRESTO II Programming Algorithm

PRESTO II Programming Algorithm allows the whole array to be programmed with a guaranteed margin, in a typical time of 52.5 seconds. Pro-gramming with PRESTO II consists of applying a sequence of 100μs program pulses to each byte until a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE circuit is automatically activated in order to guarantee that each cell is programmed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell. Program Inhibit

Programming of multiple M27C4001s in parallel with different data is also easily accomplished. Ex-cept for E, all like inputs including G of the parallel M27C4001 may be common. A TTL low level pulse applied to a M27C4001’s E input, with V PP at 12.75V, will program that M27C4001. A high level E input inhibits the other M27C4001s from being programmed.

Program Verify

A verify (read) should be performed on the pro-grammed bits to determine that they were correct-ly programmed. The verify is accomplished with G at V IL, E at V IH, V PP at 12.75V and V CC at 6.25V.

M27C4001

Electronic Signature

The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am-bient temperature range that is required when pro-gramming the M27C4001. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27C4001 with V PP = V CC = 5V. Two identifier bytes may then be sequenced from the device out-puts by toggling address line A0 from V IL to V IH. All other address lines must be held at V IL during Electronic Signature mode. Byte 0 (A0 = V IL) rep-resents the manufacturer code and byte 1 (A0=V IH) the device identifier code. For the STMicroelectronics M27C4001, these two identifi-er bytes are given in Table 4 and can be read-out on outputs Q7 to Q0.ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27C4001 are such that erasure begins when the cells are ex-posed to light with wavelengths shorter than ap-proximately 4000 ?. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 ? range. Data shows that constant exposure to room level fluo-rescent lighting could erase a typical M27C4001 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C4001 is to be exposed to these types of lighting conditions for extended pe-riods of time, it is suggested that opaque labels be put over the M27C4001 window to prevent unin-tentional erasure. The recommended erasure pro-cedure for the M27C4001 is exposure to short wave ultraviolet light which has wavelength of 2537 ?. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dos-age is approximately 15 to 20 minutes using an ul-traviolet lamp with 12000 μW/cm2 power rating. The M27C4001 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.

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M27C4001

Table 11. Ordering Information Scheme

Example:M27C4001-45X C1TR

Device Type

M27

Supply Voltage

C = 5V

Device Function

4001 = 4 Mbit (512Kb x 8)

Speed

-35 (1) = 35 ns

-45 (1) = 45 ns

-55 (1) = 55 ns

-70 = 70 ns

-80 = 80 ns

-90 = 90 ns

-10 = 100 ns

-12 = 120 ns

-15 = 150 ns

V CC Tolerance

blank = ± 10%

X = ± 5%

Package

F = FDIP32W

L = LCCC32W

B = PDIP32

C = PLCC32

N = TSOP32: 8 x 20 mm

Temperature Range

1 = 0 to 70 °C

6 = –40 to 85 °C

Options

X = Additional Burn-in

TR = Tape & Reel Packing

Note: 1.High Speed, see AC Characteristics section for further information.

For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-vice, please contact the STMicroelectronics Sales Office nearest to you.

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M27C4001

Table 12. Revision History

Date Revision Details

July 1998First Issue

09/25/00AN620 Reference removed

11/29/00PLCC codification changed (T able 11)

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M27C4001

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Table 13. FDIP32W - 32 pin Ceramic Frit-seal DIP with window, Package Mechanical Data

Symbol millimeters

inches Typ

Min

Max Typ

Min

Max A 5.720.225A10.51 1.400.0200.055A2 3.91 4.570.1540.180A3 3.89 4.500.1530.177B 0.410.560.0160.022B1 1.45

––0.057

––C 0.230.300.0090.012D 41.7342.04 1.643 1.655D238.10–– 1.500––E 15.24––0.600––E113.0613.360.5140.526e 2.54––0.100––eA 14.99––0.590––eB 16.1818.03

0.6370.710

L 3.180.125S 1.52 2.490.060

0.098?7.11––0.280

––α4°11°

4°11°

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M27C4001

Table 14. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Mechanical Data

Symbol millimeters

inches Typ

Min Max Typ

Min Max A – 5.08–0.200A10.38–0.015–A2 3.56 4.060.1400.160B 0.380.510.0150.020B1 1.52

––0.060––C 0.200.300.0080.012D 41.7842.04 1.645 1.655D238.10–– 1.500––E 15.24––0.600––E113.5913.840.5350.545e1 2.54––0.100––eA 15.24––0.600––eB 15.2417.780.6000.700L 3.18 3.430.1250.135S 1.78 2.030.0700.080α0°10°

0°10°

M27C4001

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Table 15. LCCC32W - 32 lead Leadless Ceramic Chip Carrier, Package Mechanical Data

Symbol millimeters

inches Typ

Min

Max Typ

Min

Max A 2.800.110B 0.510.710.0200.028D 11.5311.630.4420.458E 13.7214.220.5400.560e 1.27

––0.050

––e10.39–0.015–e27.62––0.300––e310.16––0.400––h 1.02––0.040––j 0.51––0.020––L 1.14 1.400.0450.055L1 1.96 2.360.0770.093K 10.5010.800.4130.425K1

8.038.23

0.3160.324

3232

M27C4001 Table 16. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data

Symbol

millimeters inches

Typ Min Max Typ Min Max

A 2.54 3.560.1000.140

A1 1.52 2.410.0600.095

A20.380.015

B0.330.530.0130.021

B10.660.810.0260.032

D12.3212.570.4850.495

D111.3511.560.4470.455

D29.9110.920.3900.430

e 1.270.050

E14.8615.110.5850.595

E113.8914.100.5470.555

E212.4513.460.4900.530

F0.000.250.0000.010

R0.890.035

N3232

Nd77

Ne99

CP0.10

0.004

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M27C4001

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Table 17. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20 mm, Package Mechanical Data

Symbol millimeters

inches Typ

Min

Max Typ

Min

Max A 1.200.047A10.050.170.0020.006A20.95 1.050.0370.041B 0.150.270.0060.011C 0.100.210.0040.008D 19.8020.200.7800.795D118.3018.500.7200.728E 7.908.100.3110.319e 0.50

––0.020

––L 0.500.700.0200.028α0°5°

0°5°

N 32

0.10

0.004

M27C4001 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners

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