AOD417
Symbol V DS V GS
I DM I AR E AR Symbol
Typ Max 16.7254050R θJC
2.53Maximum Junction-to-Case D
Steady-State
°C/W
Thermal Characteristics
Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s
R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W T =70°C
Power Dissipation A
T A =25°C P DSM Repetitive avalanche energy L=0.3mH C
Power Dissipation B T C =25°C P D T C =100°C Avalanche Current C
Continuous Drain
B,G
Units Parameter T A =25°C
G
T A =100°C
Absolute Maximum Ratings T A =25°C unless otherwise noted I D Gate-Source Voltage Drain-Source Voltage Pulsed Drain Current C
AOD417
P-Channel Enhancement Mode Field Effect Transistor
100% UIS Tested! 100% Rg Tested!
General Description
The AOD417 uses advanced trench technology to G
D-PAK
Top View
S
Bottom View
D
G
S
Symbol
Min Typ
Max
Units BV DSS -30
V -1T J =55°
C -5I GSS ±100nA V GS(th)-1-1.9
-3
V I D(ON)
-60
A 2734
T J =125°
C 364055m ?g FS 18S V S
D -0.75
-1V I S
-6
A C iss 920
pF C oss 140pF C rss 90pF R g
69?Q g (10V)16.2
nC Q g (4.5V)8.2nC Q gs 2.9nC Q gd 3.6nC t D(on)8
ns t r 30ns t D(off)22ns t f 26ns t rr 23ns Q rr
14
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =-15V, f=1MHz Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-20A
Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =0.75?,
R GEN =0.75?
Gate resistance
V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)Gate Source Charge m ?V GS =-4.5V, I D =-7A
I S =-1A,V GS =0V
V DS =-5V, I D =-20A R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
I DSS μA Gate Threshold Voltage V DS =V GS I D =-250μA V DS =-24V, V GS =0V
V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/μs
Drain-Source Breakdown Voltage On state drain current
I D =-250μA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-20A
Reverse Transfer Capacitance I F =-20A, dI/dt=100A/μs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°
C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°
C.G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev1: Sep. 2008
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
E = 1/2 LI AR AR
BV DSS
I AR
Vdd Vdd
Resistive Switching Test Circuit & Waveforms