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APT60D20BG;APT60D20SG;中文规格书,Datasheet资料

053-2001 R e v D 4-2005

PRODUCT BENEFITS

? Low Losses

? Low Noise Switching

? Cooler Operation ? Higher Reliability Systems ? Increased System Power Density

PRODUCT FEATURES

? Ultrafast Recovery Times ? Soft Recovery Characteristics

? Popular TO-247 Package or

Surface Mount D 3PAK Package

? Low Forward Voltage ? Low Leakage Current

PRODUCT APPLICATIONS

? Anti-Parallel Diode -Switchmode Power Supply -Inverters

? Free Wheeling Diode -Motor Controllers -Converters -Inverters ? Snubber Diode ? PFC

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

200V 60A

APT60D20B APT60D20S

APT60D20BG* APT60D20SG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

MAXIMUM RATINGS

All Ratings: T C = 25°C unless otherwise speci?ed.

?

APT Website - https://www.wendangku.net/doc/0c16603316.html,

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V F

I RM C T

UNIT

Volts

μA

pF

MIN TYP MAX

1.1 1.3

1.4 0.9 250 500

210

Characteristic / Test Conditions

Forward Voltage

Maximum Reverse Leakage Current Junction Capacitance, V R = 200V

I F = 60A

I F = 120A

I F = 60A, T J = 125°C

V R = V R Rated

V R = V R Rated, T J = 125°C

Characteristic / Test Conditions Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (T C = 144°C, Duty Cycle = 0.5)RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms)Operating and StorageTemperature Range Lead Temperature for 10 Sec.

Symbol V R V RRM V RWM I F(AV)I F(AV)I FSM T J ,T STG

T L

UNIT

Volts

Amps

°C

APT60D20B(G)_S(G)

20060156600-55 to 175300

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APT60D20B(G)_S(G)

DYNAMIC CHARACTERISTICS

053-2001 R e v D 4-2005

APT Reserves the right to change, without notice, the speci?cations and information contained herein.

Z θ

J C , T H E R M A L I M P E D A N C E (°C /W )

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight

Maximum Mounting Torque

Symbol R θJC R θJA W T

Torque MIN

TYP

MAX

.34 40

0.22 5.9 10

1.1

UNIT °C/W oz g

lb?in N?m

MIN

TYP

MAX

-

30 - 31 - 60 - 3 -

- 60 - 250 - 7 - - 40 - 540

-

24

UNIT ns nC

Amps ns nC Amps ns nC Amps

Characteristic

Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge

Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge

Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRM

Test Conditions

I F = 60A, di F /dt = -200A/μs V R = 133V, T C = 25°C I F = 60A, di F /dt = -200A/μs V R = 133V, T C = 125

°C I F = 60A, di F /dt = -1000A/μs V R = 133V, T C = 125°C I F = 1A, di F /dt = -100A/μs, V R = 30V, T J = 25°C 0.0107 J/°C

0.120 J/°C

RC MODEL

Junction temp

(°Case temperature

(°C)

https://www.wendangku.net/doc/0c16603316.html,/

053-2001 R e v D 4-2005

1

10 100 200

1400

12001000800600400200

C J , J U N C T I O N C A P A C I T A N C E K f ,

D Y N A M I C P A R A M

E T E R S

(p F )

(N o r m a l i z e d t o 1000A /μs )

I F (A V ) (A )

T J , JUNCTION TEMPERATURE (°C)

Case Temperature (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature

Figure 7. Maximum Average Forward Current vs. CaseTemperature

V R , REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage

Q r r , R E V E R S E R E C O V E R Y C H A R G E I F , F O R W A R D C U R R E N T

(n C )

(A )

I R R M , R E V E R S E R E C O V E R Y C U R R E N T t r r , R E V E R S E R E C O V E R Y T I M E (A )

(n s )

V F , ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/μs)

Figure 2. Forward Current vs. Forward Voltage

Figure 3. Reverse Recovery Time vs. Current Rate of Change -di F /dt, CURRENT RATE OF CHANGE (A/μs)

-di F /dt, CURRENT RATE OF CHANGE (A/μs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change

Figure 5. Reverse Recovery Current vs. Current Rate of Change

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APT60D20B(G)_S(G)

053-2001 R e v D 4-2005

5

1234

di F /dt - Rate of Diode Current Change Through Zero Crossing.I F - Forward Conduction Current

I RRM - Maximum Reverse Recovery Current.

t rr - Reverse R ecovery Time, measured from zero crossing where Q rr - Area Under the Curve Defined by I RRM and t rr .

line through I RRM and 0.25 I RRM passes through zero.Figure 9. Diode Test Circuit

Figure 10, Diode Reverse Recovery Waveform and Definitions

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

TO -247 Package Outline

D 3

PAK Package Outline

Dimensions in Millimeters (Inches)

are Plated

Dimensions in Millimeters and (Inches)

e3e1SAC: Tin, Silver, Copper

100% Sn

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MICROSEMI

APT60D20BG APT60D20SG

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