CDB7620-000中文资料

Silicon Schottky Diode Chips

Features

I For Detector and Mixer Applications I Low Capacitance for Usage Beyond 40 GHz I ZBD and Low Barrier Designs I P-Type and N-Type Junctions I Large Bond Pad Chip Design

Description

Alpha’s product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz.Alpha’s “Universal Chip”design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding.

As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode.Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit.Note that sensitivity is substantially increased by transforming the source impedance from 50 ?to higher values.Maximum sensitivity occurs when the source impedance equals the

video resistance.

Electrical Specifications at 25°C

Junction C J 1R T 2V F @ 1 mA V B 3R V @ Zero Bias

Outline Part Number Barrier Type

(pF)(?)(mV)(V)(k ?)

Drawing Max.Max.Min.–Max.Min.Typ.CDC7630-000ZBD P 0.2530135–2401 5.5526-006CDC7631-000ZBD P 0.1580150–30027.2526-006CDB7619-000Low P 0.1040275–3752735526-006CDB7620-000Low P 0.1530250–3502537526-006CDF7621-000Low N 0.1020270–3502680526-011CDF7623-000

Low

N

0.30

10

240–300

2

245

526-011

1.C J for low barrier diodes specified at 0 V .C J for ZBDs specified at 0.15 V reverse bias.

2.R T is the slope resistance at 10 mA.R S Max.may be calculated from:R S = R T - 2.6 x N.

3.V B for low barrier diodes is specified at 10 μA.V B for ZBDs is specified at 100 μA.

In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with R V less than 10 k ?may be more sensitive than a low barrier diode with R V greater than 100 k ?.Applying forward bias reduces the diode video resistance as shown in Figure 2.Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3.Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits.

P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications.The bond pad for the P-type Schottky diode is the cathode.N-type Schottky diodes have lower parasitic resistance, R S , and will perform with lower conversion loss in mixer circuits.The bond pad for the N-type Schottky diode is the anode.

SPICE Model Parameters

Parameter

CDB7619CDB7620CDF7621CDF7623CDC7630CDC7631Units IS 3.70E-08

5.40E-08 4.0E-08 1.1E-07 5.0E-06 3.8E-06A R S 9141262051?

N 1.05 1.12 1.05 1.04 1.05 1.05TT 1E-111E-111E-111E-111E-111E-11S C J00.080.150.100.220.140.08pF M 0.350.350.350.320.40

0.4E G 0.690.690.690.690.690.69eV XTI 2.0 2.0 2.0 2.0 2.0 2.0F C 0.50.50.50.50.50.5B V 2.0 4.0 3.0 2.0 2.0 2.0V I BV

1.00E-05 1.00E-05 1.0E-05 1.0E-05 1.0E-04 1.0E-04A V J

0.495

0.495

0.495

0.495

0.340

0.340

V 0.11

101001000

10000

-40

-30-20-10010

Input Power (dBm)

D e t e c t e d V o l t a g e

(m V )

Typical Performance Data

100

1000

10000

100000

1

10

100

Forward Bias (μA)

V i d e o R e s i s t

a n c e (?)

RF SOURCE IMPEDANCE

DETECTOR VOLTAGE

VIDEO LOAD IMPEDANCE

Zero Biased Detector

RF SOURCE IMPEDANCE

VOLTAGE IMPEDANCE

Biased Detector

0.001

0.010.1110100100010000

0.001

0.01

0.1

110

Forward Current (mA)

D e t e c t e d V o l t a g e (m V )

Figure 1.Detected Voltage vs.Input Power and RF Source Impedance

Figure 3.Detected Voltage vs.Forward Current

Figure 2.Video Resistance vs.Forward Bias Current

Characteristic

Value Reverse Voltage (V R )Voltage Rating

Forward Current (I F )50 mA Power Dissipation (P D )75 mW Storage T emperature (T ST )-65°C to +150°C Operating Temperature (T OP

)

-65°C to +150°C

Absolute Maximum Ratings

0.015 (0.38 mm)–0.0065 (0.165 mm)

526-006 = Cathode bond pad.526-011 = Anode bond pad.

Outline Drawing

526-006, 526-011