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MD51V65400中文资料

DESCRIPTION

The MD51V65400 is a 16,777,216-word ￥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

technology. The MD51V65400 achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MD51V65400 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.

FEATURES

?16,777,216-word ￥ 4-bit configuration

?Single 3.3 V power supply, ±0.3 V tolerance ?Input : LVTTL compatible, low input capacitance ?Output : LVTTL compatible, 3-state ?Refresh :

RAS -only refresh : 4096 cycles/64 ms CAS before RAS refresh, hidden refresh : 4096 cycles/64 ms ?Fast page mode, read modify write capability

?CAS before RAS refresh, hidden refresh, RAS -only refresh capability ?Package options:

32-pin 400 mil plastic SOJ (SOJ32-P-400-1.27)(Product : MD51V65400-xxJA)32-pin 400 mil plastic TSOP (TSOPII32-P-400-1.27-K)(Product : MD51V65400-xxTA)

xx indicates speed rank.

PRODUCT FAMILY

MD51V65400

16,777,216-Word ￥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

90 ns 504 mW Family

Access Time (Max.)Cycle Time (Min.)Standby (Max.)

Power Dissipation MD51V65400-50t RAC

50 ns t AA

25 ns t CAC

13 ns t OEA

13 ns MD51V65400-60

60 ns 110 ns

432 mW

30 ns 15 ns 15 ns

Operating (Max.) 1.8 mW

E2G0136-18-11

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PIN CONFIGURATION (TOP VIEW)

345910111213DQ2NC NC RAS A0A1A2A33029282423222120DQ3NC NC NC A11A10A9A82DQ131DQ41V CC 32V SS 32-Pin Plastic SOJ

345910111213302928242322212023113232-Pin Plastic TSOP

(K Type)

6NC 27NC 278WE 25OE 25687NC 26CAS 26714A419A71419DQ2NC NC RAS A0A1A2A3DQ1V CC NC WE NC A4DQ3NC NC NC A11A10A9A8DQ4V SS NC OE CAS A7Pin Name Function A0 - A11Address Input RAS Row Address Strobe CAS Column Address Strobe DQ1 - DQ4

Data Input/Data Output OE Output Enable WE Write Enable V CC Power Supply (3.3 V)NC

No Connection

15A518A6151816

V CC 17V SS

17A5V CC A6V SS

V SS Ground (0 V)Note :

The same power supply voltage must be provided to every V CC pin, and the same GND voltage level must be provided to every V SS pin.

BLOCK DIAGRAM

V CC

DQ1 - DQ4

CAS

A0 - A11

RAS V SS

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Recommended Operating Conditions

Capacitance

*: Ta = 25°C

Voltage on Any Pin Relative to V SS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature

V T Symbol I OS P D *T opr T stg

–0.5 to 4.6

5010 to 70–55 to 150

Rating mA W °C °C

Parameter

V Unit Power Supply Voltage Input High Voltage Input Low Voltage

V CC Symbol V SS V IH V IL

3.30——

Typ.Parameter

3.002.0–0.3

Min. 3.60V CC + 0.30.8

Max.(Ta = 0°C to 70°C)

V Unit V V V

Input Capacitance (A0 - A11) Input Capacitance (RAS , CAS , WE , OE )Output Capacitance (DQ1 - DQ4)

C IN1Symbol C IN2C I/O

577

Max.pF Unit pF pF

Parameter

(V CC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)

———

Typ.

DC Characteristics

Notes : 1.I CC Max. is specified as I CC for output open condition.

2.The address can be changed once or less while RAS = V IL .

3.The address can be changed once or less while CAS = V IH .

Parameter Symbol

Condition

MD51V65400

-60MD51V65400

-50(V CC = 3.3 V ±0.3 V, Ta = 0°C to 70°C)

I OH = –2.0 mA Output High Voltage I OL = 2.0 mA

Output Low Voltage 0 V ￡ V I ￡ V CC + 0.3 V;All other pins not Input Leakage Current

under test = 0 V DQ disable Output Leakage Current 0 V ￡ V O ￡ V CC RAS , CAS cycling,Average Power t RC = Min.Supply Current (Operating)RAS , CAS = V IH

Power Supply RAS , CAS

Current (Standby)RAS cycling,Average Power CAS = V IH ,

Supply Current t RC = Min.(RAS -only Refresh)RAS = V IH ,Power Supply CAS = V IL ,

Current (Standby)DQ = enable Average Power CAS before RAS Supply Current (CAS before RAS Refresh)RAS = V IL ,Average Power CAS cycling,

Supply Current t PC = Min.

(Fast Page Mode)

V OH V OL I LI

I LO I CC1I CC2I CC3I CC5I CC6

I CC7≥ V CC –0.2 V Min.2.40

–10

–10———

—

Max.V CC 0.4

1012010.5

120

Min.

2.40

–10

–10———

—

Max.V CC 0.4

1014010.5

140

Unit V V m A

m A

mA mA mA mA

mA mA Note

1, 2

1, 3

RAS cycling,

AC Characteristics (1/2)

Parameter

MD51V65400

-60MD51V65400

-50(V CC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3

Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time

Fast Page Mode Read Modify Write Cycle Time

Access Time from RAS Access Time from CAS

Access Time from Column Address Access Time from CAS Precharge Transition Time RAS Precharge Time RAS Pulse Width

RAS Pulse Width (Fast Page Mode)RAS Hold Time

CAS Pulse Width CAS Hold Time

RAS to CAS Delay Time

RAS to Column Address Delay Time CAS to RAS Precharge Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to RAS Lead Time Access Time from OE

OE to Data Output Buffer Turn-off Delay Time Refresh Period RAS Hold Time referenced to OE Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns RAS Hold Time from CAS Precharge Symbol

t RC t RWC t PC t PRWC t RAC t CAC t AA t CPA t T t RP t RAS t RASP t RSH t CAS t CSH t RCD t RAD t CRP t ASR t RAH t ASC t CAH t RAL t OEA t OEZ t REF t ROH t RHCP Note 4, 5, 64, 54, 6456473

Output Low Impedance Time from CAS ns t CLZ 4CAS Precharge Time (Fast Page Mode)ns t CP ns CAS to Data Output Buffer Turn-off Delay Time ns t OFF 7Min.

901313576————330505013135017125070725—0—1307300Max.————5013253050—10,000

100,000

—10,000—3725——————131364————13Min.1101554085————34060601515602015501001030—0—15010350Max.————60153035—50—10,000

100,000

——10,000—4530——————151564——15Read Command Set-up Time

Read Command Hold Time

Read Command Hold Time referenced to RAS

ns ns ns

t RCS t RCH t RRH

88000

———

000

———

AC Characteristics (2/2)

MD51V65400

-60MD51V65400

-50Write Command Pulse Width Write Command to CAS Lead Time Write Command to RAS Lead Time Data-in Set-up Time CAS to WE Delay Time

RAS to WE Delay Time Column Address to WE Delay Time RAS to CAS Hold Time (CAS before RAS )CAS Active Delay Time from RAS Precharge Data-in Hold Time

Write Command Hold Time OE Command Hold Time

OE to Data-in Delay Time (V CC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3

Write Command Set-up Time t WP t CWL t RWL t DS t CWD t RWD t AWD t CHR t RPC t DH t WCH t OEH t OED t WCS Parameter

Symbol

ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit Note 10999109

RAS to CAS Set-up Time (CAS before RAS )t CSR ns WE to RAS Precharge Time (CAS before RAS )t WRP ns WE Hold Time from RAS (CAS before RAS )

t WRH

CAS Precharge WE Delay Time

t CPWD 9ns Min.1015150408555105101015150101010

60Max.—————————————————

—Min.

7131303673481057713130101010

53Max.—————————————————

—

Notes: 1. A start-up delay of 200 μs is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device

operation is achieved.

2.The AC characteristics assume t T = 5 ns.

3.V IH (Min.) and V IL (Max.) are reference levels for measuring input timing signals.

Transition times (t T) are measured between V IH and V IL.

4.This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF.

The output timing reference levels are V OH = 2.0 V and V OL = 0.8 V.

5.Operation within the t RCD (Max.) limit ensures that t RAC (Max.) can be met.

t RCD (Max.) is specified as a reference point only. If t RCD is greater than the specified

t RCD (Max.) limit, then the access time is controlled by t CAC.

6.Operation within the t RAD (Max.) limit ensures that t RAC (Max.) can be met.

t RAD (Max.) is specified as a reference point only. If t RAD is greater than the specified

t RAD (Max.) limit, then the access time is controlled by t AA.

7.t OFF (Max.) and t OEZ (Max.) define the time at which the output achieves the open

circuit condition and are not referenced to output voltage levels.

8.t RCH or t RRH must be satisfied for a read cycle.

9.t WCS, t CWD, t RWD, t AWD and t CPWD are not restrictive operating parameters. They are

included in the data sheet as electrical characteristics only. If t WCS ≥ t WCS (Min.), then

the cycle is an early write cycle and the data out will remain open circuit (high

impedance) throughout the entire cycle. If t CWD ≥ t CWD (Min.) , t RWD ≥ t RWD (Min.),

t AWD ≥ t AWD (Min.) and t CPWD ≥ t CPWD (Min.), then the cycle is a read modify write

cycle and data out will contain data read from the selected cell; if neither of the above

sets of conditions is satisfied, then the condition of the data out (at access time) is

indeterminate.

10.These parameters are referenced to the CAS leading edge in an early write cycle, and

to the WE leading edge in an OE control write cycle, or a read modify write cycle.

? Semiconductor

MD51V65400

RAS

CAS

V IH V IL –

–

V IH V IL ––

V OH V OL ––

Address V IH V IL ––WE V IH V IL ––OE

V IH V IL ––

RAS

CAS

V IH V IL ––

Address

V IH V IL ––WE

V IH V IL ––OE

V IH V IL ––

TIMING WAVEFORM

Read Cycle

Write Cycle (Early Write)

E2G0114-17-41R

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Read Modify Write Cycle

RAS

CAS

V IH V IL ––

V I/OH V I/OL ––

Address

V IH V IL ––

V IH V IL ––OE

V IH V IL ––

Fast Page Mode Read Cycle

Fast Page Mode Write Cycle (Early Write)

"H" or "L"

RAS CAS

V IH V IL

––

V IH V IL ––

Address

V IL –

–

V IH V IL ––

Note: OE = "H" or "L"V IH

RAS CAS

V IH V IL

––

V IH V IL ––DQ

V OH V OL ––

Address

V IH V IL ––WE

V IH V IL ––

RAS

CAS

V IH V IL ––V IH V IL ––

Address

V IH V IL ––

"H" or "L"

V OH V OL ––

Note: WE , OE = "H" or "L"

Fast Page Mode Read Modify Write Cycle

RAS

CAS

Address

OE V IH V IL ––

V IH V IL ––

WE V IH V IL –

–

DQ V I/OH V I/OL ––

"H" or "L"

RAS -Only Refresh Cycle

RAS

CAS

V IH V IL ––V IH V IL ––

V OH V OL ––

WE V IH V

IL ––

OE V IH V

IL ––

Address

V IH V IL –

–

"H" or "L"

CAS before RAS Refresh Cycle

Hidden Refresh Read Cycle

V IH V IL RAS

CAS

V IH V IL V IH V IL WE

V V "H" or "L"

OL OH DQ

Note: OE , Address = "H" or "L"

Hidden Refresh Write Cycle

RAS CAS V IH V IL

–

V IH V IL

–

DQ V IH V IL

–

WE V IH V IL

–

OE V IH V IL

–

Address V IH

V IL

–

"H" or "L"

(Unit : mm)

PACKAGE DIMENSIONS

Notes for Mounting the Surface Mount Type Package

The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage.

Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times).

SOJ32-P-400-1.27

Package material Lead frame material Pin treatment

Solder plate thickness Package weight (g)Epoxy resin 42 alloy

Solder plating 5 m m or more 1.42 TYP.

Mirror finish