IRF3708中文资料
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8/22/00
IRF3708IRF3708S SMPS MOSFET
HEXFET ? Power MOSFET
l
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
Benefits
Applications
l Ultra-Low Gate Impedance l Very Low R DS(on) at 4.5V V GS
l
Fully Characterized Avalanche Voltage and Current
V DSS
R DS(on) max
I D
30V
12m ?
62A
Notes through are on page 10
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V DS Drain-Source Voltage 30V
V GS Gate-to-Source Voltage
±12 V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 62I D @ T C = 70°C Continuous Drain Current, V GS @ 10V 52A I DM Pulsed Drain Current 248P D @T C = 25°C Maximum Power Dissipation 87W P D @T C = 70°C Maximum Power Dissipation 61W Linear Derating Factor 0.58 W/°C T J , T STG Junction and Storage Temperature Range -55 to + 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D 2Pak IRF3708S
TO-220AB IRF3708
TO-262IRF3708L
Thermal Resistance
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 1.73R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θJA Junction-to-Ambient
–––62R θJA
Junction-to-Ambient (PCB mount)*
–––
40
IRF3708L
l High Frequency Buck Converters for
Computer Processor Power
PD - 93938B
IRF3708/3708S/3708L
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Dynamic @ T
= 25°C (unless otherwise specified)
Static @ T J = 25°C (unless otherwise specified)
I GSS
I DSS Drain-to-Source Leakage Current
R DS(on)Static Drain-to-Source On-Resistance Parameter Min.Typ.Max.Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 30––––––V V GS = 0V, I D = 250μA
?V (BR)DSS /?T J Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, I D = 1mA
–––812.0V GS = 10V, I D = 15A
–––9.513.5 m ?V GS = 4.5V, I D = 12A
–––14.529V GS = 2.8V, I D = 7.5A
V GS(th)Gate Threshold Voltage 0.6––– 2.0V V DS = V GS , I D = 250μA
––––––20μA V DS = 24V, V GS = 0V
––––––100V DS = 24V, V GS = 0V, T J = 125°C
Gate-to-Source Forward Leakage ––––––200V GS = 12V
Gate-to-Source Reverse Leakage ––––––-200nA V GS = -12V
IRF3708/3708S/3708L
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
IRF3708/3708S/3708L
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Forward Voltage
IRF3708/3708S/3708L
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Case Temperature
Fig 10a. Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
V DD
IRF3708/3708S/3708L
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Fig 14a&b. Gate Charge Test Circuit
and Waveform
Fig 12. On-Resistance Vs. Drain Current
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
DS
Current Sampling Resistors
V
GS
V
I A
V D
50
100
150
200
250
300
I D , Drain Current ( A )
0.005
0.010
0.015
0.020
0.025
R D S ( o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e (
? )V GS, Gate -to -Source Voltage (V)
R , D r a i n -t o -S o u r c e O n R e s i s t a n c e (?
)Fig 13. On-Resistance Vs. Gate Voltage
IRF3708/3708S/3708L
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LE A D A S S IG N M E N T S 1 - G A T E 2 - D R A IN 3 - S O U R C E 4 - D R A IN
- B -1.32 (.052)1.22 (.048)
3X
0.55 (.022)0.46 (.018)
2.92 (.115)2.64 (.104)
4.69 (.185)4.20 (.165)
3X
0.93 (.037)0.69 (.027)
4.06 (.160)3.55 (.140)
1.15 (.045) M IN
6.47 (.255)6.10 (.240)
3.78 (.149)3.54 (.139)
- A -10.54 (.415)10.29 (.405)
2.87 (.113)2.62 (.103)
15.24 (.600)14.84 (.584)
14.09 (.555)13.47 (.530)
3X
1.40 (.055)1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 O U TLIN E C O N F O R M S TO J E D E C O U T LIN E T O -220A B.
2 C O N TR O LLIN G D IM E N S IO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
INTE R N A T IO N
R E C TIFIE R L O G O E X A M P L E : TH IS IS A N IR F 1010 W ITH A S S E M B L Y L O T C O D E 9B 1M
A S S E M
B L Y L O T
C O
D D A T
E C O D E (Y Y W W )Y Y = Y E A R W W = W E E K
IRF3708/3708S/3708L
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D 2Pak Package Outline
D 2Pak Part Marking Information
10.16 (.400) RE F.
6.47 (.255)6.18 (.243)
2.61 (.103)2.32 (.091)
8.89 (.350) RE F.
- B -1.32 (.052)1.22 (.048)
2.79 (.110)2.29 (.090)
1.39 (.055)1.14 (.045)
5.28 (.208)4.78 (.188)
4.69 (.185)4.20 (.165)
10.54 (.415)10.29 (.405)
- A -2
1 3
15.49 (.610)14.73 (.580)
3X
0.93 (.037)0.69 (.027)
5.08 (.200)
3X
1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)
1.40 (.055) M AX.
NO TE S:
1 DIM ENS IONS A FTER SO LDE R DIP.
2 DIM ENS
IONING & TOLE RANCING P ER ANS I Y14.5M , 1982. 3 CONTROLLING DIM ENS ION : INCH.
4 HE ATSINK & LEA D DIM E NSIONS DO NOT INCLUDE B URRS.
0.55 (.022)0.46 (.018)
0.25 (.010) M B A M
MINIMUM RECOM ME NDE D F OOTP RINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)2.08 (.082) 2X
LE AD AS SIGNME NTS 1 - GATE 2 - DRA IN 3 - SOURCE
2.54 (.100) 2X
T N UM B ER
IN TER NA RE CTIFIE R LO G O DATE C OD E (YYW W )YY = YEAR W W = W EE K
A S SEM BLY LO T CO DE
Dimensions are shown in millimeters (inches)
IRF3708/3708S/3708L
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TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF3708/3708S/3708L
10
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting T J = 25°C, L = 0.7 mH
R G = 25?, I AS = 24.8 A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Dimensions are shown in millimeters (inches)
D 2Pak Tape & Reel Information
3
4
4
TR R
F E ED D IR E CT IO N
1.85 (.073)
1.65 (.065) 1.60 (.063)1.50 (.059)
4.10(.161)3.90(.153)
TR L
F E ED D IRE C TIO N 10.90 (.429)10.70 (.421)
16.10 (.634)15.90 (.626)
1.75 (.069)1.25 (.049)
11.60(.457)11.40(.449)
15.42 (.609)15.22 (.601)
4.72 (.136)4.52 (.178)
24.30 (.957)23.90 (.941)
0.368 (.0145)0.342 (.0135)
1.60 (.063)1.50 (.059)
13.50 (.532)12.80 (.504)330.00(14.173) M AX.
27.40 (1.079)23.90 (.941)
60.00 (2.362) M IN.
30.40 (1.197) MA X.
26.40 (1.039)24.40 (.961)
NO TE S :
1. CO MF OR M S TO EIA-418.
2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER.
3. DIM ENS ION MEAS URED @ HU B.
4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E.
This is only applied to TO-220AB package