IRG4PC50FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
V CES = 600V
V CE(on) typ. = 1.45V
@V GE = 15V, I C = 39A
Parameter Min.
Typ.
Max.
Units
R θJC Junction-to-Case - IGBT ------------0.64R θJC Junction-to-Case - Diode
------------0.83°C/W
R θCS Case-to-Sink, flat, greased surface
------0.24------R θJA Junction-to-Ambient, typical socket mount ----------40Wt
Weight
------
6 (0.21)
------
g (oz)
Thermal Resistance
Fast CoPack IGBT
Absolute Maximum Ratings
Parameter
Max.
Units
V CES
Collector-to-Emitter Voltage 600V
I C @ T C = 25°C Continuous Collector Current 70I C @ T C = 100°C Continuous Collector Current 39I CM Pulsed Collector Current Q
280A
I LM
Clamped Inductive Load Current R 280I F @ T C = 100°C Diode Continuous Forward Current 25I FM Diode Maximum Forward Current 280V GE
Gate-to-Emitter Voltage
± 20V P D @ T C = 25°C Maximum Power Dissipation 200P D @ T C = 100°C Maximum Power Dissipation 78
T J Operating Junction and
-55 to +150
T STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf?in (1.1 N?m)
? Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package ? Lead-Free
Benefits
? Generation -4 IGBT's offer highest efficiencies available
? IGBT's optimized for specific application conditions ? HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
? Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
PD -95225
W
IRG4PC50FDPbF
Parameter
Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)----190290I C = 39A Qge Gate - Emitter Charge (turn-on)----2842nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on)----6597V GE = 15V t d(on)Turn-On Delay Time ----55----T J = 25°C
t r Rise Time ----25----ns I C = 39A, V CC = 480V
t d(off)Turn-Off Delay Time ----240360V GE = 15V, R G = 5.0?t f Fall Time ----140210Energy losses include "tail" and E on Turn-On Switching Loss ---- 1.5----diode reverse recovery.
E off Turn-Off Switching Loss ---- 2.4----mJ See Fig. 9, 10, 11, 18
E ts Total Switching Loss ---- 3.9 5.0t d(on)Turn-On Delay Time ----59----T J = 150°C, See Fig. 9, 10, 11, 18
t r Rise Time ----27----ns I C = 39A, V CC = 480V
t d(off)Turn-Off Delay Time ----400----V GE = 15V, R G = 5.0?
t f Fall Time ----260----Energy losses include "tail" and
E ts Total Switching Loss ---- 6.5----mJ diode reverse recovery.
L E Internal Emitter Inductance ----13----nH Measured 5mm from package
C ies Input Capacitance ----4100----V GE = 0V
C oes Output Capacitance ----250----pF V CC = 30V See Fig. 7
C res Reverse Transfer Capacitance ----49----? = 1.0MHz
t rr Diode Reverse Recovery Time ----5075ns T J = 25°C See Fig.----105160T J = 125°C 14 I F = 25A I rr Diode Peak Reverse Recovery Current ---- 4.510A T J = 25°C See Fig.----8.015T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge ----112375nC T J = 25°C See Fig.----4201200T J = 125°C 16 di/dt 200A/μs di (rec)M /dt
Diode Peak Rate of Fall of Recovery
----250----A/μs T J = 25°C See Fig.During t b
----160
----T J = 125°C 17
Parameter Min.Typ.
Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage S 600--------V V GE = 0V, I C = 250μA
?V (BR)CES /?T J Temperature Coeff. of Breakdown Voltage ----0.62----V/°C V GE = 0V, I C = 1.0mA V CE(on)
Collector-to-Emitter Saturation Voltage ---- 1.45 1.6I C = 39A V GE = 15V ---- 1.79----V I C = 70A See Fig. 2, 5
---- 1.53----I C = 39A, T J = 150°C
V GE(th)Gate Threshold Voltage 3.0---- 6.0V CE = V GE , I C = 250μA ?V GE(th)/?T J Temperature Coeff. of Threshold Voltage -----14----mV/°C V CE = V GE , I C = 250μA g fe
Forward Transconductance T 2130----S V CE = 100V, I C = 39A
I CES Zero Gate Voltage Collector Current --------250μA V GE = 0V, V CE = 600V --------6500V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop ---- 1.3 1.7V I C = 25A See Fig. 13---- 1.2 1.5I C = 25A, T J = 150°C I GES Gate-to-Emitter Leakage Current --------±100nA V GE = ±20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
IRG4PC50FDPbF
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
L o a d C u r r e n t ( A )
010
20
30
40
50
0.1
1
10
100
f, Frequenc y (kHz)
110
100
10000.1
1
10
C E
C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
V , C o llecto r-to -E m itte r V o lta g e (V )
110
100
1000
5
6
7
8
9
10
11
12
C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
G E V , G a te -to -E m itte r V o ltag e (V )
IRG4PC50FDPbF
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 1.0
1.5
2.0
2.5
-60
-40
-20
20
40
60
80
100120
140160
C E
V , C o l l e c t o r -t o -E m i t t e r V o l t a g e (V )
T , Ju n ctio n Te m pe ratu re (°C )
J 010
20
30
40
50
60
70
25
50
75
100
125
150
M a x i m u m D C C o l l e c t o r C u r r e n t (A )
T , C ase Tem perature (°C )C
0.01
0.1
1
0.00001
0.00010.0010.010.1110
t , R ectangular P ulse D uration (sec)
1t h J C
T h e r m a l R e s p o n s e (Z )
IRG4PC50FDPbF
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
T o t a l S w i t c h i g L o s s e s (m J )
T o t a l S w i t c h i g L o s s e s (m J )
3.50
4.00
4.50
5.00
10
20
30
40
50
60
G
R , Gate Resistance ( ?)110
100
-60
-40
-20
20
40
60
80
100
120140
160
T , Junction Temperature (°C)J
04
8
12
16
20
40
80
120
160
200
G E V , G a t e -t o -E m i t t e r V o l t a g e (V
)
g Q , To tal G a te C h a rg e (n C )
02000
4000
6000
8000
1
10
100
CE
C , C a p a c i t a n c e (p F
)
V , Collector-to-Emitter Voltage (V)
IRG4PC50FDPbF
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
T o t a l S w i t c h i g L o s s e s (m J )
04
8
12
16
20
40
60
80
C I , Collector-to-Emitter Current (A )
110
100
1000
1
10
100
1000
C C E
V , C ollector-to-E m itter V oltage (V )I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
110
100
0.6
1.0
1.4
1.8
2.2
2.6
FM
F I n s t
a n t a n e o u s F o r w a r d C u r r e n t - I (A )
F o rwa rd V o ltag e D ro p - V (V )
IRG4PC50FDPbF
Fig. 14 - Typical Reverse Recovery vs. di f /dt
Fig. 15 - Typical Recovery Current vs. di f /dt
Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt
300
600
900
1200
1500100
1000
f
di /dt - (A /μs)R R Q - (n C )
100
1000
10000
100
1000
f
di /dt - (A /μs)d i (r e c )M /d t - (A /μs )
1
10
100
100
1000
f d i /d t - (A /μs)
I - (A )
I R R M
20
40
60
80
100
120
140
100
1000
f
di /dt - (A/μs)t - (n s )
r r
IRG4PC50FDPbF
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
E off, t d(off), t f
E NT
Fig. 18a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, t d(on), t r Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, t rr, Q rr, I rr
IRG4PC50FDPbF
V g G AT E SIG N AL
D EVIC
E U N D ER TE ST
C UR R EN T D.U.T.
VO LT A G E IN D.U.T.
C UR R EN T IN
D 1
t0t1t2
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
=
480V
4 X I C @25°C
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4PC50FDPbF
Notes:
Q Repetitive rating: V GE=20V; pulse width limited by maximum junction temperature (figure 20)
R V CC=80%(V CES), V GE=20V, L=10μH, R G = 5.0? (figure 19)
S Pulse width ≤ 80μs; duty factor ≤ 0.1%.
T Pulse width 5.0μs, single shot.
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TAC Fax: (310) 252-7903
Visit us at https://www.wendangku.net/doc/156729122.html, for sales contact information. 04/04 TO-247AC Package Outline
Note: For the most current drawings please refer to the IR website at:
https://www.wendangku.net/doc/156729122.html,/package/