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IRG4PC50FDPbF中文资料

IRG4PC50FDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

V CES = 600V

V CE(on) typ. = 1.45V

@V GE = 15V, I C = 39A

Parameter Min.

Typ.

Max.

Units

R θJC Junction-to-Case - IGBT ------------0.64R θJC Junction-to-Case - Diode

------------0.83°C/W

R θCS Case-to-Sink, flat, greased surface

------0.24------R θJA Junction-to-Ambient, typical socket mount ----------40Wt

Weight

------

6 (0.21)

------

g (oz)

Thermal Resistance

Fast CoPack IGBT

Absolute Maximum Ratings

Parameter

Max.

Units

V CES

Collector-to-Emitter Voltage 600V

I C @ T C = 25°C Continuous Collector Current 70I C @ T C = 100°C Continuous Collector Current 39I CM Pulsed Collector Current Q

280A

I LM

Clamped Inductive Load Current R 280I F @ T C = 100°C Diode Continuous Forward Current 25I FM Diode Maximum Forward Current 280V GE

Gate-to-Emitter Voltage

± 20V P D @ T C = 25°C Maximum Power Dissipation 200P D @ T C = 100°C Maximum Power Dissipation 78

T J Operating Junction and

-55 to +150

T STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf?in (1.1 N?m)

? Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

? Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than Generation 3

? IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

? Industry standard TO-247AC package ? Lead-Free

Benefits

? Generation -4 IGBT's offer highest efficiencies available

? IGBT's optimized for specific application conditions ? HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

? Designed to be a "drop-in" replacement for

equivalent industry-standard Generation 3 IR IGBT's

PD -95225

W

IRG4PC50FDPbF

Parameter

Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)----190290I C = 39A Qge Gate - Emitter Charge (turn-on)----2842nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on)----6597V GE = 15V t d(on)Turn-On Delay Time ----55----T J = 25°C

t r Rise Time ----25----ns I C = 39A, V CC = 480V

t d(off)Turn-Off Delay Time ----240360V GE = 15V, R G = 5.0?t f Fall Time ----140210Energy losses include "tail" and E on Turn-On Switching Loss ---- 1.5----diode reverse recovery.

E off Turn-Off Switching Loss ---- 2.4----mJ See Fig. 9, 10, 11, 18

E ts Total Switching Loss ---- 3.9 5.0t d(on)Turn-On Delay Time ----59----T J = 150°C, See Fig. 9, 10, 11, 18

t r Rise Time ----27----ns I C = 39A, V CC = 480V

t d(off)Turn-Off Delay Time ----400----V GE = 15V, R G = 5.0?

t f Fall Time ----260----Energy losses include "tail" and

E ts Total Switching Loss ---- 6.5----mJ diode reverse recovery.

L E Internal Emitter Inductance ----13----nH Measured 5mm from package

C ies Input Capacitance ----4100----V GE = 0V

C oes Output Capacitance ----250----pF V CC = 30V See Fig. 7

C res Reverse Transfer Capacitance ----49----? = 1.0MHz

t rr Diode Reverse Recovery Time ----5075ns T J = 25°C See Fig.----105160T J = 125°C 14 I F = 25A I rr Diode Peak Reverse Recovery Current ---- 4.510A T J = 25°C See Fig.----8.015T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge ----112375nC T J = 25°C See Fig.----4201200T J = 125°C 16 di/dt 200A/μs di (rec)M /dt

Diode Peak Rate of Fall of Recovery

----250----A/μs T J = 25°C See Fig.During t b

----160

----T J = 125°C 17

Parameter Min.Typ.

Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage S 600--------V V GE = 0V, I C = 250μA

?V (BR)CES /?T J Temperature Coeff. of Breakdown Voltage ----0.62----V/°C V GE = 0V, I C = 1.0mA V CE(on)

Collector-to-Emitter Saturation Voltage ---- 1.45 1.6I C = 39A V GE = 15V ---- 1.79----V I C = 70A See Fig. 2, 5

---- 1.53----I C = 39A, T J = 150°C

V GE(th)Gate Threshold Voltage 3.0---- 6.0V CE = V GE , I C = 250μA ?V GE(th)/?T J Temperature Coeff. of Threshold Voltage -----14----mV/°C V CE = V GE , I C = 250μA g fe

Forward Transconductance T 2130----S V CE = 100V, I C = 39A

I CES Zero Gate Voltage Collector Current --------250μA V GE = 0V, V CE = 600V --------6500V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop ---- 1.3 1.7V I C = 25A See Fig. 13---- 1.2 1.5I C = 25A, T J = 150°C I GES Gate-to-Emitter Leakage Current --------±100nA V GE = ±20V

Switching Characteristics @ T J = 25°C (unless otherwise specified)

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

IRG4PC50FDPbF

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I RMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

L o a d C u r r e n t ( A )

010

20

30

40

50

0.1

1

10

100

f, Frequenc y (kHz)

110

100

10000.1

1

10

C E

C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

V , C o llecto r-to -E m itte r V o lta g e (V )

110

100

1000

5

6

7

8

9

10

11

12

C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

G E V , G a te -to -E m itte r V o ltag e (V )

IRG4PC50FDPbF

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 1.0

1.5

2.0

2.5

-60

-40

-20

20

40

60

80

100120

140160

C E

V , C o l l e c t o r -t o -E m i t t e r V o l t a g e (V )

T , Ju n ctio n Te m pe ratu re (°C )

J 010

20

30

40

50

60

70

25

50

75

100

125

150

M a x i m u m D C C o l l e c t o r C u r r e n t (A )

T , C ase Tem perature (°C )C

0.01

0.1

1

0.00001

0.00010.0010.010.1110

t , R ectangular P ulse D uration (sec)

1t h J C

T h e r m a l R e s p o n s e (Z )

IRG4PC50FDPbF

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 10 - Typical Switching Losses vs.

Junction Temperature

T o t a l S w i t c h i g L o s s e s (m J )

T o t a l S w i t c h i g L o s s e s (m J )

3.50

4.00

4.50

5.00

10

20

30

40

50

60

G

R , Gate Resistance ( ?)110

100

-60

-40

-20

20

40

60

80

100

120140

160

T , Junction Temperature (°C)J

04

8

12

16

20

40

80

120

160

200

G E V , G a t e -t o -E m i t t e r V o l t a g e (V

)

g Q , To tal G a te C h a rg e (n C )

02000

4000

6000

8000

1

10

100

CE

C , C a p a c i t a n c e (p F

)

V , Collector-to-Emitter Voltage (V)

IRG4PC50FDPbF

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

T o t a l S w i t c h i g L o s s e s (m J )

04

8

12

16

20

40

60

80

C I , Collector-to-Emitter Current (A )

110

100

1000

1

10

100

1000

C C E

V , C ollector-to-E m itter V oltage (V )I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

110

100

0.6

1.0

1.4

1.8

2.2

2.6

FM

F I n s t

a n t a n e o u s F o r w a r d C u r r e n t - I (A )

F o rwa rd V o ltag e D ro p - V (V )

IRG4PC50FDPbF

Fig. 14 - Typical Reverse Recovery vs. di f /dt

Fig. 15 - Typical Recovery Current vs. di f /dt

Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt

300

600

900

1200

1500100

1000

f

di /dt - (A /μs)R R Q - (n C )

100

1000

10000

100

1000

f

di /dt - (A /μs)d i (r e c )M /d t - (A /μs )

1

10

100

100

1000

f d i /d t - (A /μs)

I - (A )

I R R M

20

40

60

80

100

120

140

100

1000

f

di /dt - (A/μs)t - (n s )

r r

IRG4PC50FDPbF

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E off, t d(off), t f

E NT

Fig. 18a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E on, t d(on), t r Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E rec, t rr, Q rr, I rr

IRG4PC50FDPbF

V g G AT E SIG N AL

D EVIC

E U N D ER TE ST

C UR R EN T D.U.T.

VO LT A G E IN D.U.T.

C UR R EN T IN

D 1

t0t1t2

Figure 19. Clamped Inductive Load Test Circuit

Figure 20. Pulsed Collector Current

Test Circuit

=

480V

4 X I C @25°C

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

IRG4PC50FDPbF

Notes:

Q Repetitive rating: V GE=20V; pulse width limited by maximum junction temperature (figure 20)

R V CC=80%(V CES), V GE=20V, L=10μH, R G = 5.0? (figure 19)

S Pulse width ≤ 80μs; duty factor ≤ 0.1%.

T Pulse width 5.0μs, single shot.

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.wendangku.net/doc/156729122.html, for sales contact information. 04/04 TO-247AC Package Outline

Note: For the most current drawings please refer to the IR website at:

https://www.wendangku.net/doc/156729122.html,/package/

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