DSEI20-12A;中文规格书,Datasheet资料
Maximum Ratings DSEI 20
I FAVM =17 A V RRM =1200 V t rr =40 ns
x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.8 V RRM , duty cycle d = 0.5Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
q International standard package q Glass passivated chips q Very short recovery time q
Extremely low losses at high switching frequencies q
Low I RM -values
q Soft recovery behaviour q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency switching devices q Anti saturation diode q Snubber diode
q
Free wheeling diode in converters and motor control circuits
q
Rectifiers in switch mode power supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)q
Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation q
Low voltage peaks for reduced protection circuits q Low noise switching q Low losses
q
Operating at lower temperature or space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
A
C
A = Anode, C = Cathode
TO-220 AC
C A
033
Fig. 1Forward current
Fig. 2Recovery charge versus -di F /dt.
Fig. 3Peak reverse current versus
versus voltage drop.
-di F
/dt.
Fig. 7Transient thermal impedance junction to case.
https://www.wendangku.net/doc/118051701.html,limeter Inches
Min.Max.Min.
Max.
A 12.7014.730.5000.580
B 14.2316.510.5600.650
C 9.6610.660.3800.420
D 3.54 4.080.1390.161
E 5.85 6.850.2300.420
F 2.54 3.420.1000.135
G 1.15
1.770.0450.070H - 6.35-0.250J 0.640.890.0250.035K 4.83 5.330.1900.210L 3.56 4.820.1400.190M 0.380.560.0150.022N
2.04 2.490.0800.115Q
0.64
1.39
0.0250.055
Dimensions
200
400600
0.1
0.30.5
0.70.90.20.40.60.8
1.0μs t fr
ns
20040060080010001200-di F /dt
t rr 0
40
80
120160
0.0
0.20.40.60.81.01.21.4Q R
I RM
°C T VJ
A/m s K f
Fig. 4Dynamic parameters versus
Fig. 5Recovery time versus -di F /dt.
Fig. 6Peak forward voltage
junction temperature.
versus di F /dt.
分销商库存信息: IXYS
DSEI20-12A