VBE20-20NO1;中文规格书,Datasheet资料

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1 - 1

Single Phase Rectifier Bridge

with Fast Recovery Epitaxial Diodes (FRED)

Symbol Conditions Maximum Ratings I dAV T C = 65°C, module 20A I FSM

T VJ = 45°C;t = 10 ms (50 Hz), sine 75A V R = 0T VJ = T VJM t = 10 ms (50 Hz), sine 65A V R = 0

I 2dt

T VJ = 45°C t = 10 ms (50 Hz), sine 28A 2s V R = 0T VJ = T VJM t = 10 ms (50 Hz), sine

21

A 2s V R = 0

T VJ -40...+150

°C T VJM 150°C T stg -40...+125

°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL ￡ 1 mA t = 1 s 3600V~M d Mounting torque (M5)

2 - 2.5Nm (10-32UNF)18 - 22

lb.in.

Weight

typ.

35

g

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

V RSM

V RRM Type

V V 2000

2000

VBE 20-20NO1

Features

q Package with DCB ceramic base plate q Isolation voltage 3600 V~q Planar passivated chips

q Leads suitable for PC board soldering q Creeping and creepage-distance fulfil UL 508/CSA 22.2NO14 and VDE 0160 requirements q Epoxy meets UL94V-O q

UL listing applied for

Applications

q Supplies for DC power equipment q Input rectifiers for PWM inverter q

Output filter for PWM inverter

Advantages

q Reduced EMI/RFI

q Easy to mount with two screws q Space and weight savings

q

Improved temperature and power cycling

Dimensions in mm (1 mm = 0.0394")

I dAV =20 A V RRM =2000 V t rr =70 ns

Symbol Conditions Characteristic Values typ.max I R V R = V RRM

T VJ = 25°C 0.75

mA V R = 0.8 V RRM T VJ = 125°C 4

7mA V F I F

= 12 A

T VJ = 25°C

5.41V V T0For power-loss calculations only 3.3V r

T 93m W R thJC per diode,

DC

1.7

K/W R thCH 0.3

K/W I RM I F = 12 A, -di F /dt = 100 A/ms

912A V R = 540 V, L ￡ 0.05 mH, T VJ = 100°C

t rr I F = 1 A; -di/dt = 100 A/ms; V R = 30 V, T VJ = 25°C 70

90ns d S Creeping distance on surface 12.7mm d A Creepage distance in air 9.4mm a

Max. allowable acceleration

50

m/s 2

1

5

106

5

1

10

6

030

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VBE20-20NO1