? 2000 IXYS All rights reserved
1 - 1
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Symbol Conditions Maximum Ratings I dAV T C = 65°C, module 20A I FSM
T VJ = 45°C;t = 10 ms (50 Hz), sine 75A V R = 0T VJ = T VJM t = 10 ms (50 Hz), sine 65A V R = 0
I 2dt
T VJ = 45°C t = 10 ms (50 Hz), sine 28A 2s V R = 0T VJ = T VJM t = 10 ms (50 Hz), sine
21
A 2s V R = 0
T VJ -40...+150
°C T VJM 150°C T stg -40...+125
°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL £ 1 mA t = 1 s 3600V~M d Mounting torque (M5)
2 - 2.5Nm (10-32UNF)18 - 22
lb.in.
Weight
typ.
35
g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
V RSM
V RRM Type
V V 2000
2000
VBE 20-20NO1
Features
q Package with DCB ceramic base plate q Isolation voltage 3600 V~q Planar passivated chips
q Leads suitable for PC board soldering q Creeping and creepage-distance fulfil UL 508/CSA 22.2NO14 and VDE 0160 requirements q Epoxy meets UL94V-O q
UL listing applied for
Applications
q Supplies for DC power equipment q Input rectifiers for PWM inverter q
Output filter for PWM inverter
Advantages
q Reduced EMI/RFI
q Easy to mount with two screws q Space and weight savings
q
Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
I dAV =20 A V RRM =2000 V t rr =70 ns
Symbol Conditions Characteristic Values typ.max I R V R = V RRM
T VJ = 25°C 0.75
mA V R = 0.8 V RRM T VJ = 125°C 4
7mA V F I F
= 12 A
T VJ = 25°C
5.41V V T0For power-loss calculations only 3.3V r
T 93m W R thJC per diode,
DC
1.7
K/W R thCH 0.3
K/W I RM I F = 12 A, -di F /dt = 100 A/ms
912A V R = 540 V, L £ 0.05 mH, T VJ = 100°C
t rr I F = 1 A; -di/dt = 100 A/ms; V R = 30 V, T VJ = 25°C 70
90ns d S Creeping distance on surface 12.7mm d A Creepage distance in air 9.4mm a
Max. allowable acceleration
50
m/s 2
1
5
106
5
1
10
6
030
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VBE20-20NO1