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BDX67中文资料

BDX67中文资料
BDX67中文资料

BDX67B BDX67C

NPN EPITAXIAL BASE DARLINGTON POWER

TRANSISTOR

NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

amplifier and switching

applications.

PNP complements are:

BDX66, BDX66A, BDX66B, BDX66C.

MECHANICAL DATA Dimensions in mm

ABSOLUTE MAXIMUM RATINGS (T case =25°C unless otherwise stated)

TO3 Package.

Case connected to collector.

mA mA

V pF kHz V

BDX67B BDX67C

ELECTRICAL CHARACTERISTICS (T j = 25°C, unless otherwise stated)

I CEO Collector cut-off current I EBO Emitter cut-off current h FE D.C. current gain (note 1)V BE Base - emitter voltage (note 1)

C c Collector capacitance f hfe Cut-off frequency

h fe Small signal current gain V F

Diode, forward voltage

I E = 0, V CB = V CEOmax I E = 0, V CB = ?V CBOmax , T j = 200°C

I B = 0, V CE = ?V CEOmax I C = 0, V EB = 5V I C =1A,V CE = 3V I C = 10A, V CE = 3V I C = 16A, V CE = 3V I C = 10A, V CE = 3V I E = I e = 0, V CB = 10V f = 1MHz I C = 5A,V CE = 3V –I Boff = 0, I CC = 7.8 A t p = 1ms, d < 1%

I C = 5A, V CE = 3V, f = 1MHz

I F = 10A

1515

5200

1000

4000

2.530050

202.5

Parameter

Test Conditions

Min.Typ.Max.

Unit.

Note 1: Measured under pulse conditions , t p < 300m s, d < 2%

2

E (BR)Turn-off breakdown energy with inductive load V CEsat Collector - emitter saturation voltage

I C = 10A,

I B = 40mA

V 150

mJ I CBO Collector cut-off current mA R1 typ.3K W R2 typ.80W

Circuit Diagram

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