BDX67B BDX67C
NPN EPITAXIAL BASE DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
MECHANICAL DATA Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T case =25°C unless otherwise stated)
TO3 Package.
Case connected to collector.
mA mA
V pF kHz V
BDX67B BDX67C
ELECTRICAL CHARACTERISTICS (T j = 25°C, unless otherwise stated)
I CEO Collector cut-off current I EBO Emitter cut-off current h FE D.C. current gain (note 1)V BE Base - emitter voltage (note 1)
C c Collector capacitance f hfe Cut-off frequency
h fe Small signal current gain V F
Diode, forward voltage
I E = 0, V CB = V CEOmax I E = 0, V CB = ?V CBOmax , T j = 200°C
I B = 0, V CE = ?V CEOmax I C = 0, V EB = 5V I C =1A,V CE = 3V I C = 10A, V CE = 3V I C = 16A, V CE = 3V I C = 10A, V CE = 3V I E = I e = 0, V CB = 10V f = 1MHz I C = 5A,V CE = 3V –I Boff = 0, I CC = 7.8 A t p = 1ms, d < 1%
I C = 5A, V CE = 3V, f = 1MHz
I F = 10A
1515
5200
1000
4000
2.530050
202.5
Parameter
Test Conditions
Min.Typ.Max.
Unit.
Note 1: Measured under pulse conditions , t p < 300m s, d < 2%
2
E (BR)Turn-off breakdown energy with inductive load V CEsat Collector - emitter saturation voltage
I C = 10A,
I B = 40mA
V 150
mJ I CBO Collector cut-off current mA R1 typ.3K W R2 typ.80W
Circuit Diagram