IPS10N03LA中文资料
IPU10N03LA P-TO252-3-11P-TO252-3-23P-TO251-3-11P-TO251-3-21
IPS10N03LA IPU10N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case R thJC -- 2.9K/W
SMD version, device on PCB
R thJA
minimal footprint --756 cm 2 cooling area 5)
--50
Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =1 mA 25--V
Gate threshold voltage V GS(th)V DS =V GS , I D =20 μA 1.2 1.62Zero gate voltage drain current
I DSS
V DS =25 V, V GS =0 V, T j =25 °C
-0.1
1
μA V DS =25 V, V GS =0 V, T j =125 °C
-10100Gate-source leakage current I GSS V GS =20 V, V DS =0 V -10100nA Drain-source on-state resistance
R DS(on)
V GS =4.5 V, I D =20 A -13.917.4m ?
V GS =10 V, I D =30 A
-8.710.4Gate resistance R G -1-?Transconductance
g fs
|V DS |>2|I D |R DS(on)max , I D =30 A
20
41
-S 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2
(one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
Values 2)
Current is limited by bondwire; with an R thJC =2.9 K/W the chip is able to carry 53 A.3)
See figure 3
4) T j,max =150 °C and duty cycle D <0.25 for V GS <-5 V
1)
J-STD20 and JESD22
IPS10N03LA IPU10N03LA Parameter Symbol Conditions Unit
min.typ.max.
Dynamic characteristics
Input capacitance C iss-10211358pF Output capacitance C oss-393522 Reverse transfer capacitance C rss-5278
Turn-on delay time t d(on)- 6.39.4ns
Rise time t r- 4.87.2
Turn-off delay time t d(off)-1827
Fall time t f- 2.8 4.2
Gate Charge Characteristics+A406)
Gate to source charge Q gs- 3.4 4.5nC
Gate charge at threshold Q g(th)- 1.6 2.2
Gate to drain charge Q gd- 2.3 3.5
Switching charge Q sw- 4.1 5.8
Gate charge total Q g-8.211
Gate plateau voltage V plateau- 3.3-V
Gate charge total, sync. FET Q g(sync)V DS=0.1 V,
V GS=0 to 5 V
-7.29.6nC
Output charge Q oss V DD=15 V, V GS=0 V-8.511 Reverse Diode
Diode continous forward current I S--30A Diode pulse current I S,pulse--210
Diode forward voltage V SD V GS=0 V, I F=30 A,
T j=25 °C
-0.93 1.2V
Reverse recovery charge Q rr V R=15 V, I F=I S,
d i F/d t=400 A/μs
--10nC
6) See figure 16 for gate charge parameter definition T C=25 °C
Values
V GS=0 V, V DS=15 V,
f=1 MHz
V DD=15 V, V GS=10 V,
I D=15 A, R G=2.7 ?
V DD=15 V, I D=15 A,
V GS=0 to 5 V
1 Power dissipation
5 Typ. output characteristics
9 Drain-source on-state resistance
13 Avalanche characteristics
IPS10N03LA IPU10N03LA Package Outline
P-TO252-3-11: Outline
Footprint:Packaging:
IPS10N03LA IPU10N03LA Package Outline
P-TO252-3-23: Outline
Footprint:
IPS10N03LA IPU10N03LA Package Outline
P-TO252-3-11
P-TO251-3-21
IPS10N03LA IPU10N03LA Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Stra?e 53
D-81541 München
? Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.