IFR9540N

IRF9540N

HEXFET ? Power MOSFET

PD - 91437B Parameter

Max.Units I D @ T C = 25°C

Continuous Drain Current, V GS @ -10V -23I

D @ T C = 100°C

Continuous Drain Current, V GS @ -10V -16A I DM

Pulsed Drain Current -76P D @T C = 25°C

Power Dissipation 140W Linear Derating Factor 0.91W/°C V GS

Gate-to-Source Voltage ± 20

V E AS

Single Pulse Avalanche Energy 430mJ I AR

Avalanche Current -11A E AR

Repetitive Avalanche Energy 14mJ dv/dt

Peak Diode Recovery dv/dt -5.0V/ns T J

Operating Junction and -55 to + 175T STG Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 srew 10 lbf?in (1.1N?m)Absolute Maximum Ratings

Parameter

Typ.Max.Units R θJC

Junction-to-Case ––– 1.1R θCS

Case-to-Sink, Flat, Greased Surface 0.50–––°C/W

R θJA Junction-to-Ambient –––62Thermal Resistance

l

Advanced Process Technology l

Dynamic dv/dt Rating l

175°C Operating Temperature l

Fast Switching l

P-Channel l Fully Avalanche Rated 5/13/98

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.