GP1S95J0000F中文资料

GP1S95J0000F Gap : 1.6mm Slit : 0.3mm

Phototransistor Output,

Compact Transmissive

Photointerrupter

■Description

GP1S95J0000F is a compact-package, phototransistor

output, transmissive photointerrupter, with opposing

emitter and detector in a molding that provides non-

contact sensing. The compact package series is a result

of unique technology combing transfer and injection

molding.

This device has a thin emitter and detector molding.

■Features

1. Transmissive with phototransistor output

2. Highlights :

? Compact Size

? Deep Gap (Gap depth : 3.3mm)

? Thin emitter and detector molding

3. Key Parameters :

? Gap Width : 1.6mm

? Slit Width (detector side): 0.3mm

? Package : 3.6×3.4×4.7mm

4. Lead free and RoHS directive compliant

■Agency approvals/Compliance

1. Compliant with RoHS directive

■Applications

1. General purpose detection of object presence or

motion.

2. Example : printer, lens control for camera

Notice The content of data sheet is subject to change without prior notice.

In the absence of con? rmation by device speci? cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

■Internal Connection Diagram

■Outline Dimensions

(Unit : mm)

Plating material : SnCu (Cu : TYP . 2%)

Top view

Date code (2 digit)

1st digit2nd digit Year of production Month of production A.D.Mark Month Mark 2000011 2001122 2002233 2003344 2004455 2005566 2006677 2007788 2008899 2009910X 2010011Y ::12Z

repeats in a 10 year cycle

Rank mark

There is no rank indicator.

Country of origin

Japan

■Absolute Maximum Ratings

■Electro-optical Characteristics (T a=25?C )

Parameter Symbol Rating Unit

Input Forward current I F50mA Reverse voltage V R6V Power dissipation P75mW

Output Collector-emitter voltage V CEO35V Emitter-collector voltage V ECO6V Collector current I C20mA Collector power dissipation P C75mW

Total power dissipation P tot100mW

Operating temperature T opr?25 to +85?C

Storage temperature T stg?40 to +100?C

?1Soldering temperature T

sol

260?C

?1 For 5s or less

(T a=25?C ) Parameter Symbol Condition MIN.TYP.MAX.Unit

Input Forward voltage V F I F=20mA? 1.2 1.4V Reverse current I R V R=3V??10μA

Output Collector dark current I CEO V CE=20V??100nA

Transfer charac-teristics Collector current I C V CE=5V, I F=5mA50?300μA Collector-emitter saturation voltage V CE(sat)I F=10mA, I C=50μA??0.4V

Response time

Rise time t r

V CE=5V, I C=100μA, R L=1kΩ

?35100μs Fall time t f?35100μ

s

MIN.

Fig.3 Forward Current vs. Forward Voltage

Fig.4 Collector Current vs. Fig.1 Forward Current vs. Ambient Temperature

Fig.2 Power Dissipation vs. Ambient Temperature

102030405060 25

100

758550250F o r w a r d c u r r e n t I F (m A )

Ambient temperature T a (o C)P o w e r d i s s i p a t i o n P ,P c ,P t o t (m W )

2015406080

100120Ambient temperature T a (°C)

075F o r w a r d c u r r e n t I F (m A )

1

100

10

C o l l e c t o r c u r r e n t I C (m A )

032.72.42.11.81.51.20.90.60.33.3Collector-emitter voltage V CE (V)

Ambient temperature Ta (o C)

Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature

Fig.8 Collector Dark Current vs. Ambient Temperature

Fig.9 Response Time vs. Load Resistance

Fig.10 Test Circuit for Response Time

Fig.11 Detecting Position Characteristics (1)

Fig.12 Detecting Position Characteristics (2)

Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.

C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e (V )

Ambient temperature Ta (o C)

0.150.13

0.11

0.09

0.07

0.05

R e s p o n s e t i m e t r ,t f ,t d ,t s (M s )

Load resistance R L (k 7)

1

100

10

1 000

Ambient temperature T a (o C)

10 10

10 6

10 7

10 8

10 9

C o l l e c t o r d a r k c u r r e n t I C E O (A )

R e l a t i v e c o l l e c t o r c u r r e n

t (%)

20406080100905010Shield moving distance L (mm)

R e l a t i v e c o l l e c t o r c u r r e n t (%)

20406080100905010

Shield moving distance L (mm)

■Design Considerations

●Design guide

1) Prevention of detection error

To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light.

2) Position of opaque board

Opaque board shall be installed at place 1.6mm or more from the top of elements.

(Example)

This product is not designed against irradiation and incorporates non-coherent IRED.

●Degradation

In general, the emission of the IRED used in photointerrupter will degrade over time.

In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.

●Parts

This product is assembled using the below parts.

? Photodetector (qty. : 1)

Category Material Maximum Sensitivity

wavelength (nm)

Sensitivity

wavelength (nm)

Response time (μs)

Phototransistor Silicon (Si)930700 to 1 20020? Photo emitter (qty. : 1)

Category Material Maximum light emitting

wavelength (nm)

I/O Frequency (MHz)

Infrared emitting diode

(non-coherent)

Gallium arsenide (GaAs)9500.3 ? Material

Case Lead frame Lead frame plating

Black polyphernylene sul? de resin (UL94 V-0)42Alloy

SnCu plating

1.6mm or more

■Manufacturing Guidelines

●Soldering Method

Flow Soldering:

Soldering should be completed below 260?C and within 5 s.

Please solder within one time.

Soldering area is 1.6mm or more away from the bottom of housing.

Please take care not to let any external force exert on lead pins.

Please don't do soldering with preheating, and please don't do soldering by re? ow.

Hand soldering

Hand soldering should be completed within 3 s when the point of solder iron is below 350?C.

Please solder within one time.

Please don't touch the terminals directly by soldering iron.

Soldered product shall treat at normal temperature.

Other notice

Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.

●Cleaning instructions

Solvent cleaning :

Solvent temperature should be 45?C or below. Immersion time should be 3 minutes or less.

Ultrasonic cleaning :

Do not execute ultrasonic cleaning.

Recommended solvent materials :

Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.

●Presence of ODC

This product shall not contain the following materials.

And they are not used in the production process for this product.

Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)

Speci? c brominated ? ame retardants such as the PBBOs and PBBs are not used in this product at all.

This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).

?Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated

diphenyl ethers (PBDE).

■Package speci? cation

●Sleeve package

Package materials

Sleeve : Polystyrene

Stopper : Styrene-Elastomer

Package method

MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers.

MAX. 50 sleeves in one case.

■Important Notices

· The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.

· Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the speci? cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.

· Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used speci? ed in the relevant speci? cation sheet nor meet the following conditions:

(i) The devices in this publication are designed for use in general electronic equipment designs such as:

--- Personal computers

--- Of? ce automation equipment

--- Telecommunication equipment [terminal]

--- Test and measurement equipment

--- Industrial control

--- Audio visual equipment

--- Consumer electronics

(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as:

--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)

--- Traf? c signals

--- Gas leakage sensor breakers

--- Alarm equipment

--- Various safety devices, etc.

(iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as:

--- Space applications

--- Telecommunication equipment [trunk lines]

--- Nuclear power control equipment

--- Medical and other life support equipment (e.g., scuba).

· If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.

· This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party.

· Contact and consult with a SHARP representative if there are any questions about the contents of this publication.