SIHFPC50LC中文资料

Power MOSFET

IRFPC50LC, SiHFPC50LC

Vishay Siliconix

FEATURES

?Ultra Low Gate Charge

?Reduced Gate Drive Requirement ?Enhanced 30 V V GS Rating ?Reduced C iss , C oss , C rss

?Isolated Central Mounting Hole ?Dynamic dV/dt Rating

?Repetitive Avalanche Rated ?Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements,faster switching speeds and increased total system savings.These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.V DD = 25 V, starting T J = 25 °C, L = 13 mH, R G = 25 Ω, I AS = 11 A (see fig. 12).

c.I SD ≤ 11 A, dI/dt ≤ 100 A/μs, V DD ≤ V DS , T J ≤ 150 °C.

d. 1.6 mm from cas

e.

PRODUCT SUMMARY

V DS (V)600

R DS(on) (Ω)V GS = 10 V

0.60

Q g (Max.) (nC)84Q gs (nC)18Q gd (nC)36Configuration

Single

TO-247

G

D

S

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free IRFPC50LCPbF SiHFPC50LC-E3SnPb

IRFPC50LC SiHFPC50LC

ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted

ARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V DS

600V

Gate-Source Voltage V GS ±

30 Continuous Drain Current V GS at 10 V T C = 25 °C I D

11

A

T C = 100 °C 7.3Pulsed Drain Current

a I DM 44Linear Derating Factor 1.5W/°C

Single Pulse Avalanche Energy b

E AS 920mJ Repetitive Avalanche Current a I AR 11 A Repetitive Avalanche Energy

a E AR 19mJ Maximum Power Dissipation T C = 25 °C

P D 190W Peak Diode Recovery dV/dt c

dV/dt 3.0V/ns Operating Junction and Storage Temperature Range T J , T stg

- 55 to + 150 °C

Soldering Recommendations (Peak Temperature)for 10 s 300d

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may apply

IRFPC50LC, SiHFPC50LC

Vishay Siliconix

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

ARAMETER SYMBOL TY

.MAX.UNIT

Maximum Junction-to-Ambient R thJA -40°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.24-Maximum Junction-to-Case (Drain)

R thJC

-0.65

IRFPC50LC, SiHFPC50LC

Vishay Siliconix

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

IRFPC50LC, SiHFPC50LC

Vishay Siliconix Array Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see https://www.wendangku.net/doc/1e15421470.html,/ppg?91242.

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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