FVXO-HC52中文资料

Model: FVXO-HC52 SERIES

Page 1 of 15

FOX Electronics 5570 Enterprise Parkway Fort Myers, Florida 33905 USA +1.239.693.0099 FAX +1.239.693.1554 https://www.wendangku.net/doc/1415964132.html,

HCMOS 5 x 3.2mm 2.5V V C X O Freq:0.75 MHz to 180MHz

Rev. 04/08/2008

Features

X Low Cost X

Frequency Resolution to six decimal places A -20 to +70°C or -40 to +85°C operating temperatures T

Industry Standard Package, Footprint & Pin-Out F Gold over Nickel Termination Finish Applications

? ANY application requiring an oscillator ? SONET ? Ethernet

? Storage Area Network ? Broadband Access

? Microprocessors / DSP / FPGA ? Industrial Controllers

? Test and Measurement Equipment ?Fiber Channel

Contents

page

Model Selection & Part Number Guide 2 Electrical Characteristic 3 Absolute Maximums 4 Output Wave Characteristics 4 Phase Noise 5 Jitter 5 Pin Assignment 6 Recommended Circuit 6

Reflow 6 Mechanical Drawing and Pad Layout 7 Tape and Reel Specification 8

Label 8 Traceability – LOT Number & Serial Identification 9 RoHS Material Declaration 10 SGS Report 11 & 12 Mechanical Test 13 Burn-In Test 13 MTTF / FITS calculations 14

Other X PRESS O Links

15 Fox Contact Information 15

Description

The Fox X PRESS O Crystal Oscillator is a

breakthrough in configurable Frequency Control Solutions. X PRESS O utilizes a family of

proprietary ASICs, designed and developed by Fox, with a key focus on noise reduction technologies. The 3rd order Delta Sigma Modulator reduces noise to the levels that are comparable to traditional Bulk Quartz and SAW oscillators. The ASICs family has ability to select the output type, input voltages, and temperature performance features.

With the X PRESS lead-time, low cost, low noise, wide frequency range, excellent ambient performance, XpressO is an excellent choice over the conventional technologies.

Finished X PRESS O parts are 100% final tested.

元器件交易网https://www.wendangku.net/doc/1415964132.html,

This example, FVXO-HC52BR-35.328 = Voltage Controlled, HCMOS Output, Ceramic, 5 x 3.2mm Package, 2.5V,

±50 PPM Absolute Pull Range, -40 to +85°C Temperature Range, at 35.328 MHz Absolute Maximum Ratings

(Useful life may be impaired. For user guidelines only, not tested.

Operation is only guaranteed for voltage and temperature specifications in Electrical Characteristics section.)

Parameters Symbol Condition

Maximum Value (unless otherwise noted)

Input

Voltage V DD–0.5V to +5.0V

Operating

Temperature T AMAX–55°C to +105°C

Storage

Temperature T STG–55°C to +125°C

Junction

Temperature 150°C ESD Sensitivity HBM Human Body Model > 1 kV

Electrical Characteristics

Parameters Symbol Condition

Maximum Value (unless otherwise noted)

Frequency

Range F O0.750 to 180.000 MHz Absolute

Pull

Range

Note 1APR ± 50 ppm MIN

Temperature

Range

T O

T STG Standard operating

Optional operating

Storage

-20°C to +70°C

-40°C to +85°C

-55°C to +125°C

Supply

Voltage V DD Standard 2.5V ± 5%

Input

Current

(@ 15pF LOAD)I DD

0.75 ~ 20 MHz

20+ ~ 50 MHz

50+ ~ 100 MHz

100+ ~ 130 MHz

130+ ~ 160 MHz

160+ ~ 180 MHz

22 mA

25 mA

29 mA

32 mA

35 mA

37 mA

Output

Load HCMOS Standard15 pF

Start-Up

Time T S10

mS Output Enable / Disable Time 100 nS

Moisture Sensitivity Level MSL JEDEC J-STD-20 1 Termination

Finish Au

Note 1 – Inclusive of 25°C tolerance, operating temperature range, input voltage change, load change, aging, shock and vibration.

If 30% to 70% times are used, Rise and Fall times change to 1.5 nS from 0.75 to 250MHz If 20% to 80% times are used, Rise and Fall times change to 2 nS from 0.75 to 150MHz

Output Wave Characteristics

Parameters

Symbol

Condition

Maximum Value

(unless otherwise noted)

Output LOW Voltage V OL 0.75 to 160 MHz 160+ to 180 MHz 10% V DD

20% V DD

Output HIGH Voltage

V OH 0.75 to 160 MHz 160+ to 180 MHz 90% V DD MIN 80% V DD MIN Output Symmetry (See Drawing Below) @ 50% V DD Level

45% ~ 55% Output Enable (PIN # 2) Voltage V IH

≥ 70% V DD Output Disable (PIN # 2) Voltage V IL

≤ 30% V DD

Cycle Rise Time (See Drawing Below) T R 0.75 to 160 MHz 160+ to 180 MHz 3.5 nS (10%~90% V DD ) 2.5 nS (20%~80% V DD )

Cycle Fall Time (See Drawing Below)

T F

0.75 to 160 MHz 160+ to 180 MHz

3.5 nS (90%~10% V DD ) 2.5 nS (80%~20% V DD )

Jitter is frequency dependent. Below are typical values at select frequencies.

Phase Jitter is integrated from HP3048 Phase Noise Measurement System; measured directly into 50 ohm input; V DD = 2.5V. TIE was measured on LeCroy LC684 Digital Storage Scope, directly into 50 ohm input, with Amherst M1 software; V DD = 2.5V.

Per MJSQ spec (Methodologies for Jitter and Signal Quality specifications)

Rj and Dj , measured on LeCroy LC684 Digital Storage Scope, directly into 50 ohm input, with Amherst M1 software.

Phase Jitter & Time Interval Error (TIE)

Frequency

Phase Jitter

(12kHz to 20MHz)

T I E

(Sigma of Jitter Distribution)

Units

62.5 MHz 2.1 3.1 pS RMS 106.25 MHz 1.2 3.5 pS RMS 125 MHz 1.1 2.7 pS RMS

156.25 MHz

0.8

3.7

pS RMS

Random & Deterministic Jitter Composition

Frequency

Random (Rj) (pS RMS) Deterministic (Dj) (pS P-P)

Total Jitter (Tj)

(14 x Rj) + Dj

62.5 MHz 1.3 8.4 27.6 pS 106.25 MHz 1.4 8.3 27.7 pS 125 MHz 1.3 6.7 25.6 pS

156.25 MHz

1.4

9.7

29.5 pS

Pin Connections

#1) V

C #4) Output

#2) E/D #5) NC #3) GND #6) V

DD

793A-35.328-2

FVXO-HC52BR-35.328

An additional identification code is contained internally if tracking should ever be necessary

RoHS Material Declaration

Material Name Component Content Content

(mg) （ｗｔ％）(CAS Number)

Cover Kovar Nickel

(Ni) 1.890 3.09% 7440-02-0

Cobalt (Co) 1.113 1.82% 7440-48-4

Iron (Fe) 3.540 5.78% 7439-89-6

Base Ceramic Alumina

(Al2O3) 35.484

1344-28-1

57.98%

14808-60-7

Silicon Oxide (SiO2) 1.733

2.83%

Chromium Oxide (Cr2O3) 0.268 0.44% 1308-38-9

Molybdenum Oxide (MoO2) 0.364 0.59% 18868-43-4

Magnesium Oxide (MgO) 0.234 0.38% 1309-48-4

Calcium Oxide (CaO) 0.253 0.41% 1305-78-8

+ Metallization Tungsten (W) 6.290 10.28% 7440-33-7

Molybdenum (Mo) 0.195 0.32% 7439-98-7

+ Nickel Plating Nickel (Ni) 0.810 1.32% 7440-02-0

Cobalt (Co) 0.203 0.33% 7440-48-4

+ Gold Plating Gold (Au) 0.281 0.46% 7440-57-5

＋Seal ring Iron (Fe) 2.438 3.98% 7439-89-6

Nickel (Ni) 1.309 2.14% 7440-02-0

Cobalt (Co) 0.768 1.25% 7440-48-4

＋silver solder Silver (Ag) 1.191 1.95% 7440-22-4

Copper (Cu) 0.210 0.34% 7440-50-8

ＩＣＩＣAluminum (Al) 0.0021 0.00343% 7429-90-5

Silicon (Si) 0.950 1.55% 7440-21-3

Gold Gold (Au) 0.480 0.784% 7440-57-5

7440-22-4

0.000343%

Adhesive Silver (Ag) 0.000210

Epoxy 0.0000700 0.0001144%

Crystal Crystal Silicon Dioxide (SiO2) 1.170 1.91%

14808-60-7 Electrode Silver (Ag) 0.019 0.0310% 7440-22-4

Nickel (Ni) 0.000159 0.000260% 7440-02-0

7440-22-4

0.000605%

Adhesive Silver (Ag) 0.00037

Silicon (Si) 0.000125 0.000204% 7440-21-3

TOTAL 61.196100.00%

3rd Party (SGS) Material Report

3rd Party (SGS) Material Report (continued)

Burn-In Testing – under power 2000 Hours, 125°C

Mechanical Testing

Parameter Test Method

Mechanical Shock Drop from 75cm to hardwood surface – 3 times Mechanical Vibration 10~55Hz, 1.5mm amplitude, 1 Minute Sweep

2 Hours each in

3 Directions (X, Y, Z)

High Temperature Burn-in

Under Power @ 125°C for 2000 Hours (results below)

Hermetic Seal

He pressure: 4 ±1 kgf / cm 2 2 Hour soak

2,000 Hour Burn-In

Products are grouped together by process for MTTF calculations.

(All XpressO output and package types are manufactured with the same process)

Number of Parts Tested: 360 (120 of each output type: HCMOS, LVDS, LVPECL) Number of Failures: 0

Test Temperature: 125°C Number of Hours: 2000

MTTF was calculated using the following formulas:

[1.] Device Hours (devhrs ) = (number of devices) x (hours at elevated temperature in °K) Label Name

af Acceleration Factor e

eV 11eV Activation Energy 0.40 V

k

Bolzman’s Constant

8.62 X 10-5 eV /°K

t 1 Operating Temperature (°K) t 2 Accelerated Temperature (°K)

Θ Theta Confidence Level (60% industry standard) r

Failures

Number of failed devices

χ2

Chi-Square

statistical significance for bivariate tabular analysis [table look-up] based on assumed Θ (Theta – confidence) and number of failures (r) For zero failures (60% Confidence): χ2 = 1.830

DEVICE-HOURS = 360 x 2000 HOURS = 720,000

FITS = Failure Rate *1E9 = 26

MTTF / FITS Calculations

For the complete product line of X PRESS O products visit

https://www.wendangku.net/doc/1415964132.html,/xpressomain.htm

Patent Numbers:

US 6,664,860, US 5,960,403, US 5,952,890; US 5,960,405; US 6,188,290;

Foreign Patents: R.S.A. 98/0866, R.O.C. 120851; Singapore 67081, 67082; EP 0958652

China ZL 98802217.6, Malaysia MY-118540-A, Philippines 1-1998-000245, Hong Kong #HK1026079, Mexico #232179

US and Foreign Patents Pending

XpressO? Fox Electronics

Japan

Contact Information Fox Hong Kong Fox

Tel: +852.2854.4285, Tel:+81.3.3374.2079,

+81.3.3377.5221 (USA)-Worldwide Headquarters Fax:+852.2854.4282 Fax:

https://www.wendangku.net/doc/1415964132.html,/email.htm Tel: 888-GET-2-FOX Email: https://www.wendangku.net/doc/1415964132.html,/email.htm Email:

Outside US: +1.239.693.0099,

Taiwan

Fax:+1.239.693.1554 Fox EMEA Fox Email: https://www.wendangku.net/doc/1415964132.html,/email.htm Tel/Fax: +44.1767.312632 Tel:+886-2-22073427,

Email: https://www.wendangku.net/doc/1415964132.html,/email.htm Fax:+886-2-22073486

Email: https://www.wendangku.net/doc/1415964132.html,/email.htm

The above specifications, having been carefully prepared and checked, is believed to be accurate at the time of publication; however, no