2SD198中文资料

Silicon NPN Power Transistors2SD198 DESCRIPTION

·With TO-3 package

·High breakdown voltage

APPLICATIONS

·voltage regulator

·Inverters

·Switching mode power supply

PINNING(see Fig.2)

PIN DESCRIPTION

1Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=℃)

UNIT SYMBOL PARAMETER CONDITIONS VALUE V CBO Collector-base voltage Open emitter 300 V

V CEO Collector-emitter voltage Open base 300 V

V EBO Emitter-base voltage Open collector 6 V

I C Collector current 1 A

P C Collector power dissipation T C=75℃25 W T j Junction temperature 165 ℃

T stg Storage temperature -55~200 ℃

CHARACTERISTICS

Tj=25℃unless otherwise specified

MAX UNIT

SYMBOL PARAMETER CONDITIONS MIN

TYP.

V CEO(SUS) Collector-emitter sustaining voltage I C=100mA ;I B=0 300 V

V(BR)EBO Emitter-base breakdown voltage I E=1mA ;I C=0 6 V

V

1.0

V CEsat Collector-emitter saturation voltage I C=1.0A; I B=0.1A

V

1.5

V BEsat Base-emitter saturation voltage I C=1.0A; I B=0.1A

mA

0.1

I CBO Collector cut-off current V CB=300V; I E=0

mA

0.1

I EBO Emitter cut-off current V EB=6V; I C=0

300

h FE DC current gain I C=0.1A ; V CE=5V 30

f T Transition frequency I C=0.5A ; V CE=10V 25 MHz

2

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3