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MRF1535NT1;MRF1535FNT1;中文规格书,Datasheet资料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies to 520 MHz. The high gain and broadband performance of these devices

make them ideal for large-signal, common source amplifier applications in

12.5 volt mobile FM equipment.

?Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 35 Watts

Power Gain — 13.5 dB

Efficiency — 55%

?Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive

Features

?Excellent Thermal Stability

?Characterized with Series Equivalent Large-Signal Impedance Parameters

?Broadband-Full Power Across the Band:135-175 MHz

400-470 MHz

450-520 MHz

?200_C Capable Plastic Package

?N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

?In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol

Value Unit Drain-Source Voltage V DSS-0.5, +40Vdc Gate-Source Voltage V GS±20Vdc Drain Current — Continuous I D6Adc Total Device Dissipation @ T C = 25°C (1)

Derate above 25°C

P D135

0.50

W/°C Storage Temperature Range T stg-65 to +150°C Operating Junction Temperature T J200°C Table 2. Thermal Characteristics

Characteristic Symbol Value(2)Unit Thermal Resistance, Junction to Case RθJC0.90°C/W Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-0203260°C

1.Calculated based on the formula P D =

2.MTTF calculator available at https://www.wendangku.net/doc/1a17148726.html,/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Document Number: MRF1535N

Rev. 13, 6/2009 Freescale Semiconductor

Technical Data

MRF1535NT1

MRF1535FNT1

T J–T C

RθJC

RF Device Data

Freescale Semiconductor

MRF1535NT1 MRF1535FNT1Table 4. Electrical Characteristics (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage (V GS = 0 Vdc, I D = 100 μAdc)V (BR)DSS 60——Vdc Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 10 Vdc, V DS = 0 Vdc)I GSS

—

0.3

μAdc

On Characteristics

Gate Threshold Voltage

(V DS = 12.5 Vdc, I D = 400 μA)V GS(th)1— 2.6Vdc Drain-Source On-Voltage (V GS = 5 Vdc, I D = 0.6 A)R DS(on)——0.7ΩDrain-Source On-Voltage

(V GS = 10 Vdc, I D = 2.0 Adc)V DS(on)

—

Vdc

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C iss ——250pF Output Capacitance

(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C oss ——150pF Reverse Transfer Capacitance

(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C rss

—

RF Characteristics (In Freescale Test Fixture)Common-Source Amplifier Power Gain

(V DD = 12.5 Vdc, P out = 35 Watts, I DQ = 500 mA) f = 520 MHz G ps —13.5—dB Drain Efficiency

(V DD = 12.5 Vdc, P out = 35 Watts, I DQ = 500 mA)

f = 520 MHz

—

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MRF1535NT1 MRF1535FNT1

RF Device Data

Freescale Semiconductor

Figure 1. 135 - 175 MHz Broadband Test Circuit

Ferroxcube #VK200

C1, C9, C20, C23330 pF, 100 mil Chip Capacitors C2, C50 to 20 pF Trimmer Capacitors C3, C1533 pF, 100 mil Chip Capacitors C4, C6, C1918 pF, 100 mil Chip Capacitors C7160 pF, 100 mil Chip Capacitor C8

240 pF, 100 mil Chip Capacitor C10, C2110 μF, 50 V Electrolytic Capacitors C11, C22470 pF, 100 mil Chip Capacitors C12, C13150 pF, 100 mil Chip Capacitors C14110 pF, 100 mil Chip Capacitor C1668 pF, 100 mil Chip Capacitor C17120 pF, 100 mil Chip Capacitor C1851 pF, 100 mil Chip Capacitor L117.5 nH, Coilcraft #A05T L2 5 nH, Coilcraft #A02T

L3 1 Turn, #26 AWG, 0.250″ ID L4 1 Turn, #26 AWG, 0.240″ ID L5

4 Turn, #24 AWG, 0.180″ ID N1, N2Type N Flange Mounts R1 6.

5 Ω, 1/4 W Chip Resistor R239 Ω Chip Resistor (0805)R3 1.2 k Ω, 1/8 W Chip Resistor R433 k Ω, 1/4 W Chip Resistor Z10.970″ x 0.080″ Microstrip Z20.380″ x 0.080″ Microstrip Z30.190″ x 0.080″ Microstrip Z40.160″ x 0.080″ Microstrip Z5, Z60.110″ x 0.200″ Microstrip Z70.490″ x 0.080″ Microstrip Z80.250″ x 0.080″ Microstrip Z90.320″ x 0.080″ Microstrip Z100.240″ x 0.080″ Microstrip Board Glass Teflon ?, 31 mils

TYPICAL CHARACTERISTICS, 135 - 175 MHz

P out , OUTPUT POWER (WATTS)

Figure 2. Output Power versus Input Power P in , INPUT POWER (WATTS)

Figure 3. Input Return Loss versus Output Power

P o u t , O U T P U T P O W E R (W A T T S )

0600

5040302010

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RF Device Data

Freescale Semiconductor

MRF1535NT1 MRF1535FNT1TYPICAL CHARACTERISTICS, 135 - 175 MHz

G A I N (d B )

Figure 8. Output Power versus Supply Voltage V DD , SUPPLY VOLTAGE (VOLTS)Figure 9. Drain Efficiency versus Supply Voltage

V DD , SUPPLY VOLTAGE (VOLTS)

P o u t , O U T P U T P O W E R (W A T T S )

101413121115

107010

5040302014

305045

4035

111918171615141312https://www.wendangku.net/doc/1a17148726.html,/

MRF1535NT1 MRF1535FNT1

RF Device Data

Freescale Semiconductor

Figure 10. 450 - 520 MHz Broadband Test Circuit

B1Ferroxcube VK200

C1160 pF, 100 mil Chip Capacitor C2 3 pF, 100 mil Chip Capacitor C3 3.6 pF, 100 mil Chip Capacitor C4 2.2 pF, 100 mil Chip Capacitor C510 pF, 100 mil Chip Capacitor C6, C7

16 pF, 100 mil Chip Capacitors C8, C15, C1627 pF, 100 mil Chip Capacitors C9

43 pF, 100 mil Chip Capacitor C10, C14, C25160 pF, 100 mil Chip Capacitors C11, C2210 μF, 50 V Electrolytic Capacitors C12, C241,200 pF, 100 mil Chip Capacitors C13, C230.1 μF, 100 mil Chip Capacitors C17, C1824 pF, 100 mil Chip Capacitors C19160 pF, 100 mil Chip Capacitor C208.2 pF, 100 mil Chip Capacitor

C21 1.8 pF, 100 mil Chip Capacitor L1

47.5 nH, 5 Turn, Coilcraft N1, N2Type N Flange Mounts

R1500 Ω Chip Resistor (0805)R2 1 k Ω Chip Resistor (0805)R333 k Ω, 1/8 W Chip Resistor Z10.480″ x 0.080″ Microstrip Z2 1.070″ x 0.080″ Microstrip Z30.290″ x 0.080″ Microstrip Z40.160″ x 0.080″ Microstrip Z5, Z80.120″ x 0.080″ Microstrip Z6, Z70.120″ x 0.223″ Microstrip Z9 1.380″ x 0.080″ Microstrip Z100.625″ x 0.080″ Microstrip Board Glass Teflon ?, 31 mils

OUTPUT

V GG

TYPICAL CHARACTERISTICS, 450 - 520 MHz

0600

5040302010

P out , OUTPUT POWER (WATTS)

Figure 11. Output Power versus Input Power P in , INPUT POWER (WATTS)

Figure 12. Input Return Loss versus Output Power

P o u t , O U T P U T P O W E R (W A T T S )

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RF Device Data

Freescale Semiconductor

MRF1535NT1 MRF1535FNT1TYPICAL CHARACTERISTICS, 450 - 520 MHz

G A I N (d B )

Figure 17. Output Power versus Supply Voltage V DD , SUPPLY VOLTAGE (VOLTS)Figure 18. Drain Efficiency versus Supply Voltage

V DD , SUPPLY VOLTAGE (VOLTS)

P o u t , O U T P U T P O W E R (W A T T S )

915

13121110305045

1014131211https://www.wendangku.net/doc/1a17148726.html,/

MRF1535NT1 MRF1535FNT1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

210

1010T J , JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.

109

107

M T T F F A C T O R (H O U R S X A M P S 2)

90110130150170190100120140160180200Figure 19. MTTF Factor versus Junction Temperature

108

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RF Device Data

Freescale Semiconductor

MRF1535NT1 MRF1535FNT1Note: Z OL * was chosen based on tradeoffs between gain, drain efficiency, and device stability.

Figure 20. Series Equivalent Input and Output Impedance

Z o = 10 Ω

Z in

=Complex conjugate of source impedance.

Z OL *=Complex conjugate of the load

impedance at given output power,voltage, frequency, and ηD > 50 %.

f MHz Z in ΩZ OL *Ω135 5.0 + j0.9 1.7 + j0.2Z in

=Complex conjugate of source impedance.

Z OL *=Complex conjugate of the load

impedance at given output power, voltage, frequency, and ηD > 50 %.V DD = 12.5 V, I DQ = 250 mA, P out = 35 W 155 5.0 + j0.9 1.7 + j0.2175

3.0 + j1.0

1.3 + j0.1

f MHz Z in ΩZ OL *Ω4500.8 - j1.4 1.0 - j0.8V DD = 12.5 V, I DQ = 500 mA, P out = 35 W 4700.9 - j1.4 1.1 - j0.6500 1.0 - j1.4 1.1 - j0.6Z OL *

Z in

f = 175 MHz Z in

Z OL *

*Output Matching Network

520

0.9 - j1.4

1.1 - j0.5

f = 135 MHz

f = 450 MHz

f = 520 MHz f = 175 MHz

f = 135 MHz

f = 450 MHz

f = 520 MHz

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MRF1535NT1 MRF1535FNT1

RF Device Data

Freescale Semiconductor

Table 5. Common Source Scattering Parameters (V DD = 12.5 Vdc)

I DQ = 250 mA

f S 11

S 21

S 12

S 22

MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ500.89-1738.496830.014-260.76-1701000.90-175 3.936720.014-140.79-1701500.91-175 2.429630.011-230.82-1702000.92-175 1.627570.010-440.86-1702500.94-176 1.186530.007-160.88-1703000.95-1760.888490.005-440.91-1713500.96-1760.686480.005360.92-1704000.96-1760.568440.005-10.94-1714500.97-1760.457440.004490.94-1725000.97-1760.394440.003-510.95-1715500.98-1760.332420.001310.95-173600

0.98

-177

0.286

0.013

0.94

-173

I DQ = 1.0 A

f S 11

S 21

S 12

S 22

MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ500.90-1738.49830.006-390.86-1761000.90-175 3.92720.009-50.86-1761500.91-175 2.44630.00670.87-1762000.92-175 1.62570.008210.88-1752500.94-176 1.19530.00680.89-1743000.95-1760.89480.00830.89-1743500.96-1760.69480.007480.91-1744000.96-1760.57440.004410.93-1734500.97-1760.46440.004430.93-1735000.97-1760.39440.003570.94-1735500.98-1760.33410.006620.94-174600

0.98

-177

0.28

0.009

0.93

-173

I DQ = 2.0 A

f S 11

S 21

S 12

S 22

MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ500.94-1769.42880.005-720.89-1771000.94-178 4.56820.00540.89-1771500.94-178 2.99780.00370.89-1772000.94-178 2.14740.005170.90-1762500.95-178 1.67710.004400.90-1753000.95-178 1.32670.007350.91-1753500.95-178 1.08670.005570.92-1744000.96-1780.93630.003500.93-1734500.96-1780.78620.007680.93-1735000.96-1770.68610.004990.94-1735500.97-1770.59580.008780.93-175600

0.97

-178

0.51

0.009

0.92

-174

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RF Device Data Freescale Semiconductor

MRF1535NT1 MRF1535FNT1APPLICATIONS INFORMATION

DESIGN CONSIDERATIONS

This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and char-acteristics of FETs.

This surface mount packaged device was designed pri-marily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to in-sure proper heat sinking of the device.

The major advantages of Lateral RF power MOSFETs in-clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis-matched loads without suffering damage.

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (C gd), and gate-to-source (C gs). The PN junction formed during fab-rication of the RF MOSFET results in a junction capacitance from drain-to-source (C ds). These capacitances are charac-terized as input (C iss), output (C oss) and reverse transfer (C rss) capacitances on data sheets. The relationships be-tween the inter-terminal capacitances and those given on data sheets are shown below. The C iss can be specified in two ways:

1.Drain shorted to source and positive voltage at the gate.

2.Positive voltage of the drain in respect to source and zero

volts at the gate.

In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF ap-plications.

DRAIN CHARACTERISTICS

One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, R DS(on), occurs in the linear region of the output characteristic and is speci-fied at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V DS(on). For MOSFETs, V DS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device.

BV DSS values for this device are higher than normally re-quired for typical applications. Measurement of BV DSS is not recommended and may result in possible damage to the de-vice.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109Ω— resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, V GS(th).

Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region.

Gate Termination — The gates of these devices are es-sentially capacitors. Circuits that leave the gate open-cir-cuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate-to-source. If gate protec-tion is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on.

DC BIAS

Since this device is an enhancement mode FET, drain cur-rent flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (I DQ), whose value is application dependent. This device was characterized at I DQ = 500 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. There-fore, the gate bias circuit may generally be just a simple re-sistive divider network. Some special applications may require a more elaborate bias system.

GAIN CONTROL

Power output of this device may be controlled to some de-gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line.

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FREESCALE

MRF1535NT1MRF1535FNT1