PD55003L中文资料
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June, 17 2003PD55003L
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
?EXCELLENT THERMAL STABILITY ?COMMON SOURCE CONFIGURATION ?P OUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V ?NEW LEADLESS PLASTIC PACKAGE ?ESD PROTECTION
?SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55003L is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L boasts the excellent gain,linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT ?.
PD55003L’s superior linearity performance makes
it an ideal solution for car mobile radio.
ORDER CODE PD55003L
BRANDING 55003
PowerFLAT ?(5x5)
ABSOLUTE MAXIMUM RATINGS (T CASE = 25 °C)
Symbol Parameter
Value Unit V (BR)DSS Drain-Source Voltage 40V V GS
Gate-Source Voltage -0.5 to +15
V I D Drain Current
2.5A P DISS Power Dissipation (@ Tc = 70°C)14W Tj Max. Operating Junction Temperature 150°C T STG
Storage Temperature
-65 to +150
°C
THERMAL DATA
R th(j-c)
Junction -Case Thermal Resistance
5.7
°C/W
PIN CONNECTION
TOP VIEW
PD55003L
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ELECTRICAL SPECIFICATION (T CASE = 25 °C)STATIC
DYNAMIC
Symbol Test Conditions Min.Typ.Max.Unit I DSS V GS = 0 V V DS = 28 V 1μA I GSS V GS = 20 V V
DS = 0 V
1
μA V GS(Q)V DS = 10 V I D = 50 mA
2.0
5.0V V DS(ON)V GS = 10 V I D = 0.5 A 0.36
V G FS V DS = 10 V I D = 1 A 1.0
mho C ISS V GS = 0 V V DS = 12.5 V f = 1 MHz 34pF C OSS V GS = 0 V V DS = 12.5 V f = 1 MHz 23pF C RSS
V GS = 0 V
V DS = 12.5 V
f = 1 MHz
1.8
pF
Symbol Test Conditions
Min.Typ.
Max.
Unit P 1dB V DD = 12.5 V I DQ = 50 mA f = 500 MHz 3W G P V DD = 12.5 V I DQ = 50 mA P OUT = 3 W f = 500 MHz 1719dB ηD V DD = 12.5 V I DQ = 50 mA P OUT = 3 W f = 500 MHz 5052%Load mismatch
V DD = 15.5 V I DQ = 50 mA P OUT = 3 W
f = 500 MHz
ALL PHASE ANGLES
20:1
VSWR
FREQ. MHz
Z IN (?)Z DL (?)480 1.79 - j 4.9610.68 + j 7.45500
1.88 - j 5.9310.28 + j 8.92520
2.10 - j 7.03
9.86 + j 10.18
IMPEDANCE DATA
ESD PROTECTION CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL
Test Conditions
Class Human Body Model 2Machine Model
M3
Test Methodology
Rating J-STD-020B
MSL 3
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PD55003L
TEST CIRCUIT COMPONENT PART LIST
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PD55003L
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
4 i n c h e s
PD55003L
S-PARAMETER (PD55003L) (V DS = 12.5V I DS = 0.15A)
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PD55003L S-PARAMETER (PD55003L)
(V DS = 12.5V I DS = 0.8A)
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PD55003L
S-PARAMETER (PD55003L) (V DS = 12.5V I DS = 1.5A)
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PD55003L ?
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PD55003L
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mm
Inch MIN.
TYP .MAX MIN.
TYP.MAX A 0.90 1.000.0350.039A10.020.05
0.0010.002
A30.240.009AA 0.150.250.350.0060.010.014b 0.430.510.580.0170.0200.023c 0.64
0.710.79
0.025
0.0280.031D 5.000.197d 0.300.011E 5.000.197E2 2.49 2.57 2.64
0.098
0.1010.104e 1.270.050f 3.370.132g 0.740.03h
0.21
0.008
DIM.
PowerFLAT ? MECHANICAL DATA
PD55003L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
? 2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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