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MA4SPS42中文资料

SURMOUNT TM PIN Diodes MA4SPS421, MA4SPS422

V2

MA4SPS420 Series

MA4SPS42中文资料

Dimensions

Features

?Surface Mount 100 μm I-Region Length Device ?No Wirebonds Required

?Rugged Silicon-Glass Construction ?Silicon Nitride Passivation ?Polymer Scratch Protection

?Low Parasitic Capacitance and Inductance ?Higher Average and Peak Power Handling

Description and Applications

This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMIC TM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This Vertical Topology provides for Exceptional Heat Transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.

These packageless devices are suitable for usage in Moderate Incident Power ( 10 W C.W. ) or Higher Incident Peak Power ( 500 W ) Series, Shunt, or Series-Shunt Switches. Smaller Parasitic Inductance, 0.1to 0.2 nH, and Excellent RC Constant ( 0.45 pS ), make the devices ideal for Higher Frequency Switch Elements compared to their Plastic Device Counterparts.

Case Style ODS-1294 (MA4SPS421) 1.Backside metal: 0.1 microns thick.

2.Shaded Areas Indicate Backside Ohmic Gold Contacts.

3.Both Devices have Same Outline Dimensions ( A to G ).

Dim Inches Millimeters Min. Max. Min. Max. A 0.040 0.042 1.025 1.075 B 0.021 0.023 0.525 0.575 C 0.004 0.008 0.102 0.203 D 0.013 0.015 0.325 0.375 E 0.011 0.013 0.275 0.325 F 0.013 0.015 0.325 0.375 G

0.019

0.021

0.475

0.525

Absolute Maximum Ratings 1

@ TA = +25 °C (unless otherwise specified)

1.Operation of this device above any one of these parameters may cause permanent damage.

Parameter Absolute Maximum

Forward Current 250 mA Reverse Voltage l -200 V l

Operating Temperature -55 °C to +125 °C Storage Temperature -55 °C to +150 °C

Dissipated Power (RF & DC) 1.8 W

Mounting Temperature

+235 °C for 10 seconds

Junction Temperature +175 °C Case Style ODS-1295 (MA4SPS422)

Bottom Side Contacts are Circuit Side

SURMOUNT TM PIN Diodes

MA4SPS421, MA4SPS422 V2

MA4SPS420 Series

Electrical Specifications @ + 25 °C

Parameter Symbol Conditions Units Min. Typ. Max. Min. Typ. Max

MA4SPS422 Capacitance C T0 V, 1 MHz1pF 0.130 0.175 0.340 0.500 Capacitance C T0 V, 1 GHz1,3pF .08 0.14

Capacitance C T-40 Volts, 1 MHz1pF 0.090 0.125 0.180 0.300 Capacitance C T-40 Volts, 1 GHz 1,3pF .07 0.13

Resistance R S+10 mA, 1 GHz2,3? 6.2 3.1

Forward Voltage V F+10 mA V 0.900 0.950 0.840 0.900 Reverse Leakage

Current

I R l -200 V l μA l -10 l l -10 l

Input Third Order Intercept Point IIP3 F 1 = 1000 MHz

F 2 = 1010 MHz

Input Power = +10 dBm

I bias = +10 mA

dBm +50 +50

C.W. Thermal

Resistance

RθJL I H = 0.5 A, I L = 10 mA °C/W 80 70

Minority Carrier Lifetime T L+10 mA / -6 mA

(50% - 90% V)

μs 5 10

MA4SPS421

1.Total capacitance, C T, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar.

2.Series resistance Rs is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic

Resistance)

3.Rs and C T are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with

Sn 60 / Pb 40 solder.

4.Steady-state R θJL measured with die mounted in an ODS-186 package with Sn 60 / Pb 40 solder.

SURMOUNT TM PIN Diodes

MA4SPS420 Series MA4SPS421, MA4SPS422 V2

Handling

All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized.

Bonding

Attachment to a circuit board is made simple through the use of surface mount technology. Mounting pads are conveniently located on the bottom surface of these devices and are removed from the active junction locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of 80 Au / 20 Sn or Sn 60 / Pb 40 solder is recommended. Conductive silver epoxy for die attachment may also be used for lower incident power (<1 W average incident power) applications.

When soldering these devices to a hard substrate, hot gas die bonding is preferred. We re-commend utilizing a vacuum tip and force of 60 to100 grams applied normal to the top surface of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads and reflow the solder by heating the circuit trace near the mounting pad while applying 60 to 100 grams of force perpendicular to the top surface of the die. The solder joint must Not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads closest to each other can be visually inspected through the die after attach is completed.

A typical profile for a Sn 60/ Pb 40 Soldering process is provided in Application Note, “ M538 ” , “ Surface Mounting Instructions “ on the MA-COM website http://www.wendangku.net/doc/20f120e2998fcc22bcd10dde.html.

SURMOUNT TM PIN Diodes MA4SPS421, MA4SPS422

V2

MA4SPS420 Series

MA4SPS420 Typical Performance Curves @ +25 °C

Rs vs. Current (@ 100MHz & 1GHz)

MA4SPS421

110100

MA4SPS42中文资料

MA4SPS42中文资料

0.001

0.010.1

Current (A)

R s (o h m s

)

Rs vs. Current (@ 100MHz & 1GHz)

MA4SPS422

110

100

0.001

0.010.1

Current (A)

R s (o h m s

)

Ct vs Voltage (@ 100MHz & 1GHz)

MA4SPS421

MA4SPS42中文资料

MA4SPS42中文资料

0.0E+00

5.0E-141.0E-131.5E-132.0E-132.5E-133.0E-130

10

2030

40

Voltage (V)

C t (F )

Ct vs Voltage (@ 100MHz & 1GHz)

MA4SPS422

0.0E+00

5.0E-141.0E-131.5E-132.0E-132.5E-133.0E-130

10203040

Voltage (V)

C t (F )

Rp vs Voltage (@ 100MHz & 1GHz)

MA4SPS421

MA4SPS42中文资料

MA4SPS42中文资料

11010010001000010000010000000

10

2030

40

Voltage (V)

R p (o h m s )

Rp vs Voltage (@ 100MHz & 1GHz)

MA4SPS422

11010010001000010000010000000

10203040

Voltage (V)

R p (o h m s )

SURMOUNT TM PIN Diodes MA4SPS421, MA4SPS422

V2

MA4SPS420 Series

MA4SPS420 Typical Performance Curves @ +25 °C

Ct vs Frequency (@ 0, 5 & 40V)

MA4SPS421

MA4SPS42中文资料

MA4SPS42中文资料

0.0E+00

5.0E-14

1.0E-131.5E-13

2.0E-132.5E-13

3.0E-130.0E+00

5.0E+08 1.0E+09 1.5E+09 2.0E+09Frequency (Hz)

C t (F )

Ct vs Frequency (@ 0, 5 & 40V)

MA4SPS422

0.0E+00

5.0E-141.0E-131.5E-132.0E-132.5E-133.0E-130.0E+00

5.0E+08 1.0E+09 1.5E+09 2.0E+09

Frequency (Hz)

C t (F )

Ls vs Frequency (@ 10mA & 100mA)

MA4SPS421

MA4SPS42中文资料

MA4SPS42中文资料

0.00E+00

5.00E-111.00E-101.50E-102.00E-102.50E-103.00E-100.0E+00

5.0E+08 1.0E+09 1.5E+09 2.0E+09

Frequency (Hz)

L s (H )

Ls vs Frequency (@ 10mA & 100mA)

MA4SPS422

0.00E+00

5.00E-11

1.00E-101.50E-10

2.00E-102.50E-10

3.00E-100.0E+00

5.0E+08 1.0E+09 1.5E+09 2.0E+09

Frequency (Hz)

L s (H )

Rs vs Frequency (@ 10mA & 100mA)

MA4SPS421

MA4SPS42中文资料

MA4SPS42中文资料

0123456789100E+0

2E+84E+86E+88E+81E+9

Frequency (H)R s (o h m s )

Rs vs Frequency (@ 10mA & 100mA)

MA4SPS422

0123456789100E+0

2E+8

4E+8

6E+8

8E+8

1E+9

Frequency (H)

R s (o h m s )

SURMOUNT TM PIN Diodes MA4SPS421, MA4SPS422

V2

MA4SPS420 Series

MA4SPS421 Schematic

MA4SPS421 SPICE Model

PinDiodeModel

NLPINM1 Ffe=1.0 Af=1.0

Kf=0.0 Imax=3.1 E+8 A/m^2 Fc=0.5

M=0.5 Vj=0.7 V Cj0=0.07 pF Rs=0.1 Ohm Tau= 5 usec Cmin=0.06 pF Rr=11 K Ohm Wi=100 um Un=900 cm^2/V-sec Vi=0.0 V

Is=1.0E-14 A wPmax=1.6 W wBv=260 V

Notes : Rs = 2 * Rvia + Rp

R p

Cp

L s

Rvia Rvia

+

_

SURMOUNT TM PIN Diodes MA4SPS421, MA4SPS422

V2

MA4SPS420 Series

MA4SPS422 Schematic

MA4SPS422 SPICE Model

PinDiodeModel

NLPINM1 Ffe=1.0 Af=1.0

Kf=0.0 Imax=7.8 E+7 A/m^2 Fc=0.5

M=0.5 Vj=0.7 V Cj0=0.13 pF Rs=0.1 Ohm Tau= 10 usec Cmin=0.12 pF Rr=9 K Ohm Wi=100 um Un=900 cm^2/V-sec Vi=0.0 V

Is=1.0E-14 A wPmax=1.8 W wBv=340 V

Notes : Rs = 2 * Rvia + Rp

Rp

Cp

Ls

Rvia Rvia

+

_