当前位置：文档库 › IRFP360

IRFP360

File Number

2290.3

IRFP360

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power ?eld

effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power.They can be operated directly from integrated circuits.Formerly developmental type T A17464.

Features

?23A, 400V ?r DS(ON) = 0.200?

?Single Pulse Avalanche Energy Rated ?SOA is Power Dissipation Limited ?Nanosecond Switching Speeds ?Linear T ransfer Characteristics ?High Input Impedance

?Related Literature

-TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP360

TO-247

IRFP360

NOTE:When ordering, use the entire part number.

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

Data Sheet

July 1999

Absolute Maximum Ratings

T C = 25o C, Unless Otherwise Speci?ed

IRFP360UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DS 400V Drain to Gate Voltage (R GS = 20k ?)(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DGR 400V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D T C = 100o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 2314A A Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM 92A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS ±20V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D 250W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2W/o C Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E AS 1200mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T J , T STG -55 to 150o C Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg

300260

CAUTION:Stresses above those listed in “Absolute Maximum Ratings”may cause permanent damage to the device.This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.

NOTE:

1.T J = 25o C to 125o C.

Electrical Speci?cations

T C = 25o C, Unless Otherwise Speci?ed

PARAMETER

SYMBOL TEST CONDITIONS

MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250μA, V GS = 0V (Figure 10)400--V Gate Threshold Voltage V GS(TH)V GS = V DS , I D = 250μA 2-4V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS , V GS = 0V

--25μA V DS = 0.8 x Rated BV DSS , V GS = 0V, T J = 125o C --250μA On-State Drain Current (Note 2)I D(ON)V DS > I D(ON) x r DS(ON)MAX , V GS = 10V 23--A Gate to Source Leakage Current I GSS V GS =±20V

--±100nA On Resistance (Note 2)

r DS(ON)I D = 13A, V GS = 10V (Figures 8, 9)-0.180.20?Forward Transconductance (Note 2)g fs V DS ≥ 50V, I DS > 13A (Figure 12)

1421-S Turn-On Delay Time t d(ON)V DD = 200V, I D ≈ 25A, R GS = 4.3?,V GS = 10V,R L = 7.5?

MOSFET Switching Times are Essentially Independent of Operating Temperature

-2233ns Rise Time

t r -94140ns Turn-Off Delay Time t d(OFF)-80120ns Fall Time

t f -6699ns Total Gate Charge

(Gate to Source + Gate to Drain)Q g(TOT)V GS = 10V, I D = 25A, V DS = 0.8 x Rated BV DSS I G(REF) = 1.5mA (Figure 14)

Gate Charge is Essentially Independent of Operating Temperature

-68100nC Gate to Source Charge Q gs -17-nC Gate to Drain “Miller” Charge Q gd -24-nC Input Capacitance C ISS V DS = 25V, V GS = 0V, f = 1MHz (Figure 11)

-4000-pF Output Capacitance

C OSS -550-pF Reverse Transfer Capacitance C RSS -97-pF Internal Drain Inductance

L D

Measured between the Contact Screw on Header closer to Source and Gate Pins and Center of Die Modified MOSFET Symbol Showing the Internal Device Inductances

5.0

Internal Source Inductance

L S

Measured from the Source Lead, 6mm (0.25in) from Header and Source Bonding Pad

-13-nH

Thermal Resistance Junction to Case R θJC --0.50o C/W Thermal Resistance Junction to Ambient

R θJA

Free Air Operation

o C/W

L S L D

D S

Source to Drain Diode Speci?cations

PARAMETER

SYMBOL TEST CONDITIONS

MIN TYP MAX UNITS Continuous Source to Drain Current I SD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier

--23A Pulse Source to Drain Current (Note 2)

I SDM

Source to Drain Diode Voltage (Note 2)V SD T J = 25o C, I SD = 23A, V GS = 0V (Figure 13)-- 1.8V Reverse Recovery Time t rr T J = 25o C, I SD = 25A, dI SD /dt = 100A/μs 2004601000ns Reverse Recovery Charge Q RR

T J = 25o C, I SD = 25A, dI SD /dt = 100A/μs

3.1

7.1

μC

NOTES:

2.Pulse test:pulse width ≤300μs, duty cycle ≤ 2%.

3.Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4.V DD = 50V, starting T J = 25o C, L = 4mH, R G = 25?,Peak I AS = 23A.

Typical Performance Curves

Unless Otherwise Speci?ed

FIGURE 1.NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2.MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3.TRANSIENT THERMAL IMPEDANCE

100

150

T C , CASE TEMPERATURE (o C)

P O W E R D I S S I P A T I O N M U L T I P L I E R

0.20.40.60.81.01.20

100

I D , D R A I N C U R R E N T (A )

T C , CASE TEMPERATURE (o C)

150

125

0.1

10-3

10-5

10-4

10-310-2

0.11

Z θJ C ,T R A N S I E N T T H E R M A L t 1, RECTANGULAR PULSE DURATION (S)

SINGLE PULSE

P DM

NOTES:

DUTY FACTOR: D = t 1/t 2PEAK T J = P DM x Z θJC + T C

t 1t 2

0.10.020.20.5

0.01

0.05

10-2

I M P E D A N C E (o C /W )

FIGURE 4.FORWARD BIAS SAFE OPERATING AREA FIGURE 5.OUTPUT CHARACTERISTICS

FIGURE 6.SATURATION CHARACTERISTICS FIGURE 7.TRANSFER CHARACTERISTICS

FIGURE 8.DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9.NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

102

103

V DS , DRAIN TO SOURCE VOLTAGE (V)

103

102

101

0.1

I D , D R A I N C U R R E N T (A )

SINGLE PULSE T J = MAX RATED T C = 25o C

BY r DS(ON)

AREA IS LIMITED OPERATION IN THIS 10μs 100μs

1ms 10ms

I D , D R A I N C U R R E N T (A )

04080120

160

200

V DS , DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs 0

V GS = 10V

V GS = 6.0V

V GS = 5.5V

V GS = 5.0V V GS = 4.5V

V GS = 4.0V DUTY CYCLE = 0.5% MAX 08

I D , D R A I N C U R R E N T (A )

V DS , DRAIN TO SOURCE VOLTAGE (V)

V GS = 10V

V GS =4.5V

V GS =5.5V

V GS =6.0V

V GS =5.0V V GS =4.0V

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

2468V SD , GATE TO SOURCE VOLTAGE (V)

102

0.1

I D , D R A I N C U R R E N T (A )

T J = 150o C

T J = 25o C

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V DS ≥50V

I D , DRAIN CURRENT (A)

r D S (O N ), D R A I N T O S O U R C E 2.0

1.6

1.2

0.80.4

6090

120

150

V GS = 20V

V GS = 10V

O N R E S I S T A N C E

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

3.0

1.8

1.2

0.6

-40040T J , JUNCTION TEMPERATURE (o C)

1202.4

80160

N O R M A L I Z E D D R A I N T O S O U R C E O N R E S I S T A N C E

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V GS = 10V, I D =13A

FIGURE 10.NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11.CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12.TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13.SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14.GATE TO SOURCE VOLTAGE vs GATE CHARGE

1.251.05

0.950.850.75

-40040T J , JUNCTION TEMPERATURE (o C)

1201.15

80I D = 250μA

160

N O R M A L I Z E D D R A I N T O S O U R C E B R E A K D O W N V O L T A G E

V DS , DRAIN TO SOURCE VOLTAGE (V)

C , C A P A C I T A N C E (n F )

10000

80006000

4000

2000

251025102

C ISS = C GS + C G

D C RSS = C GD

C OSS ≈ C DS + C GD

V GS = 0V , f = 1MHz C ISS

C OSS

C RSS

5040

010

2030

4050

I D , DRAIN CURRENT (A)

g f s , T R A N S C O N D U C T A N C E (S )

T J = 150o C

T J = 25o C

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX V DS ≥ 50V

0.40.8 1.2 1.6

V SD , SOURCE TO DRAIN VOLTAGE (V)

102

I S D , S O U R C E T O D R A I N C U R R E N T (A )

T J = 150o C

T J = 25o C

PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX

0255075100125

I D = 25A

Q g , GATE CHARGE (nC)

V G S , G A T E T O S O U R C E V O L T A G E (V )

2016

V DS = 80V

V DS = 320V

Test Circuits and Waveforms

FIGURE 15.UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16.UNCLAMPED ENERGY WAVEFORMS

FIGURE 17.SWITCHING TIME TEST CIRCUIT

FIGURE 18.RESISTIVE SWITCHING WAVEFORMS

FIGURE 19.GATE CHARGE TEST CIRCUIT FIGURE 20.GATE CHARGE WAVEFORMS

t P

V GS

0.01?

I AS

V DS

V DD

R G

DUT

VARY t P TO OBTAIN REQUIRED PEAK I AS

V DD

V DS

BV DSS

t P

I AS

t AV

V GS

R L

R G

DUT

V DD

t ON t d(ON)

t r

90%

10%

V DS

90%

10%

t f

t d(OFF)

t OFF 90%

50%

10%

PULSE WIDTH

V GS

00.3μF

12V BATTERY

50k ?

V DS

DUT

I G(REF)

(ISOLATED V DS

0.2μF CURRENT REGULATOR

I D CURRENT SAMPLING I G CURRENT SAMPLING SUPPLY)

RESISTOR

SAME TYPE AS DUT

Q g(TOT)Q gd

Q gs

V DS

V GS

V DD

I G(REF)

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certi?cation. Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-out notice.Accordingly,the reader is cautioned to verify that data sheets are current before placing https://www.wendangku.net/doc/2f3675916.html,rmation furnished by Intersil is believed to be accurate and reliable.However,no responsibility is assumed by Intersil or its subsidiaries for its use;nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site https://www.wendangku.net/doc/2f3675916.html,

Sales Of?ce Headquarters

NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204 Melbourne, FL32902

TEL:(407) 724-7000

FAX: (407) 724-7240EUROPE

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029