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WF2M32-120G2UC5中文资料

White Electronic Designs

WF2M32-XXX5

FIGURE 1 – PIN CONFIGURATION FOR WF2M32-XHX5

2Mx32 5V Flash Module

Organized as 2Mx32

Commercial, Industrial, and Military Temperature Ranges

5 Volt Read and Write. 5V ± 10% Supply.

Low Power CMOS

Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.

Supports reading or programming data to a sector not being erased.

RESET# pin resets internal state machine to the read mode.

Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Separate Power and Ground Planes to improve noise immunity

* T his product is subject to change without notice.

Note: For programming information refer to Flash Programming 16M5 Application Note.

FEATURES

Access Time of 90, 120, 150ns

Packaging:

? 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP (Package 401).? 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square (Package 510) 3.56mm (0.140") height. Designed to ? t JEDEC 68 lead 0.990" CQFJ footprint (FIGURE 3)

Sector Architecture

? 32 equal size sectors of 64KBytes per each 2Mx8

chip ? Any combination of sectors can be erased. Also supports full chip erase.

Minimum 100,000 Write/Erase Cycles Minimum

White Electronic Designs WF2M32-XXX5 FIGURE 2 – PIN CONFIGURATION FOR WF2M32-XG2UX5

White Electronic Designs WF2M32-XXX5

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Voltage on Any Pin Relative to V SS V T-2.0 to +7.0V Power Dissipation P T8W Storage Temperature T stg-65 to +125°C Short Circuit Output Current I OS100mA Endurance – Write/Erase Cycles

(Extended Temp)

100,000 min cycles Data Retention20years

RECOMMENDED DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5V Ground V SS000V Input High Voltage V IH 2.0-V CC + 0.5V Input Low Voltage V IL-0.5-+0.8V Operating Temperature (Mil.)T A-55-+125°C Operating Temperature (Ind.)T A-40-+85°C

NOTES:

1. The I CC current listed includes both the DC operating current and the frequency

dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE# at V IH.

2. I CC active while Embedded Algorithm (program or erase) is in progress.

3. DC test conditions V IL = 0.3V, V IH = V CC - 0.3V

CAPACITANCE

T A = +25°C, f = 1.0MHz

Parameter Symbol Max Unit OE# capacitance COE50pF WE1-4# capacitance

IP (PGA)CWE20pF H

IP (Alternate pinout)CWE50pF CQFP G4T CWE50pF CQFP G2U CWE20pF G2U (Alternate pinout)CWE50pF CS1-4# capacitance CCS20pF Data I/O capacitance CI/O20pF Address input capacitance CAD 50pF This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS – CMOS COMPATIBLE

V CC = 5.0V, V SS = 0V, -55°C ≤ T A ≤ +125°C

Parameter Symbol Conditions Min Max Unit Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC10μA Output Leakage Current I LOx32V CC = 5.5, V IN = GND to V CC10μA V CC Active Current for Read (1)I CC1CS# = V IL, OE# = V IH, f = 5MHz160mA V CC Active Current for Program or Erase (2) I CC2CS# = V IL, OE# = V IH240mA V CC Standby Current I CC3V CC = 5.5, CS# = V IH, f = 5MHz, RESET# = V CC ± 0.3V8.0mA Output Low Voltage V OL I OL = 12.0 mA, V CC = 4.50.45V Output High Voltage V OH I OH = -2.5 mA, V CC = 4.50.85xV CC V Low V CC Lock-Out Voltage V LKO 3.2 4.2V

White Electronic Designs WF2M32-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED

V CC = 5.0V, -55°C ≤ T A ≤ +125°C

Parameter Symbol-90-120-150Unit

Min Max Min Max Min Max

Write Cycle Time t AVAV t WC90120150ns Chip Select Setup Time t ELWL t CS000ns Write Enable Pulse Width t WLWH t WP455050ns Address Setup Time t AVWL t AS000ns Data Setup Time t DVWH t DS455050ns Data Hold Time t WHDX t DH000ns Address Hold Time t WLAX t AH455050ns Write Enable Pulse Width High t WHWL t WPH202020ns Duration of Byte Programming Operation (1)t WHWH1300300300μs Sector Erase (2)t WHWH2151515sec Read Recovery Time before Write t GHWL000μs

V CC Setup Time t VCS505050μs Chip Programming Time444444sec Chip Erase Time (3)256256256sec Output Enable Hold Time (4) t OEH101010ns RESET# Pulse Width (5)t RP500500500ns NOTES:

1. Typical value for t WHWH1 is 7μs.

2. Typical value for t WHWH2 is 1sec.

3. Typical value for Chip Erase Time is 32sec.

4. For Toggle and Data Polling.

5. RESET# internally tied to V CC for the default pin con? guration in the HIP package.

AC CHARACTERISTICS – READ-ONLY OPERATIONS

V CC = 5.0V, -55°C ≤ T A ≤ +125°C

Parameter Symbol-90-120-150Unit

Min Max Min Max Min Max

Read Cycle Time t AVAV t RC90120150ns Address Access Time t AVQV t ACC90120150ns Chip Select Access Time t ELQV t CE90120150ns Output Enable to Output Valid t GLQV t OE405055ns Chip Select High to Output High Z (1)t EHQZ t DF203035ns Output Enable High to Output High Z (1)t GHQZ t DF203035ns

t AXQX t OH000ns Output Hold from Addresses, CS# or OE#

Change, whichever is First

RST Low to Read Mode (1,2)t Ready202020μs NOTES:

1. Guaranteed by design, not tested.

2. RESET# internally tied to V CC for the default pin con? guration in the HIP package.

White Electronic Designs

WF2M32-XXX5

FIGURE 3 – AC TEST CIRCUIT

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED

V CC = 5.0V, V SS = 0V, -55°C ≤ T A ≤ +125°C

Parameter

Symbol -90-120-150

Unit Min Max Min Max Min

Max

Write Cycle Time

t AVAV t WC 90120150ns Write Enable Setup Time t WLEL t WS 000ns Chip Select Pulse Width t ELEH t CP 455050ns Address Setup Time t AVEL t AS 000ns Data Setup Time t DVEH t DS 455050ns Data Hold Time t EHDX t DH

000ns Address Hold Time

t ELAX t AH 455050ns Chip Select Pulse Width High

t EHEL t CPH

20 20

ns Duration of Byte Programming Operation (1)t WHWH1300300300μs Sector Erase Time (2)t WHWH21515

sec Read Recovery Time t GHEL

μs Chip Programming Time 444444sec Chip Erase Time (3)

256256

256

sec Output Enable Hold Time (4)

t OEH

1010

NOTES:

1. Typical value for tWHWH1 is 7μs.

2. Typical value for tWHWH2 is 1sec.

3. Typical value for Chip Erase Time is 32sec.

4. For Toggle and Data Polling.

FIGURE 4 – RESET TIMING DIAGRAM

White Electronic Designs WF2M32-XXX5 FIGURE 5 – AC WAVEFORMS FOR READ OPERATIONS

White Electronic Designs WF2M32-XXX5 FIGURE 6 – WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED

White Electronic Designs WF2M32-XXX5 FIGURE 7 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS

White Electronic Designs WF2M32-XXX5 FIGURE 8 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM

OPERATIONS

White Electronic Designs WF2M32-XXX5 FIGURE 9 – ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS

White Electronic Designs WF2M32-XXX5 FIGURE 10 – ALTERNATE PIN CONFIGURATION FOR WF2M32I-XHX5

FIGURE 11 – ALTERNATE PIN CONFIGURATION FOR WF2M32U-XG2UX5

White Electronic Designs WF2M32-XXX5 FIGURE 12 – PIN CONFIGURATION FOR WF2M32I-XG2UX5

White Electronic Designs WF2M32-XXX5 PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

White Electronic Designs WF2M32-XXX5 PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

White Electronic Designs

WF2M32-XXX5

LEAD FINISH: Blank = Gold plated leads

A = Solder dip leads

V PP PROGRAMMING VOLTAGE

5 = 5 V

DEVICE GRADE:

Q = Compliant -55°C to +125°C M = Military -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: H = Ceramic Hex In line Package, HIP (Package 401) G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510) ACCESS TIME (ns) IMPROVEME N

T MARK ? For HIP Package Blank = 4CS# and 4WE#

= 4CS# and 1WE#, RESET# ? For G2U Package Blank = 4CS# and 4WE#

U = 1CS# and 1WE#

= 4CS# and 1WE#, RESET# ORGANIZATION, 2M x 32 User con? gurable as 4M x 16 or 8M x 8

(Except WF2M32U-XG2UX which is 32 bit wide only.)

Flash

WHITE ELECTRONIC DESIGNS CORP .

ORDERING INFORMATION

W F 2M32 X - XXX X X 5 X