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SM6127NSKPa3

SM6127NSKPa3
SM6127NSKPa3

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1

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Pin Description

Ordering and Marking Information

Features

Applications

· Secondary Side Synchronous Rectification · DC-DC Converter · Motor Control · Load Switching

· 60V/80A a ,

R DS(ON)=5.9m W (max.) @ V GS =10V R DS(ON)=7.2m W (max.) @ V GS =4.5V

· Reliable and Rugged

· Lead Free and Green Devices Available

(RoHS Compliant)

N-Channel MOSFET

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green ” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

DFN5x6-8

S S

S

G

D

D D

D G

S S S ( 1, 2, 3 )

(5,6,7,8)(4)

SM6127XXXXX

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2Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Note b :Pulse width limited by max. junction temperature.

Note c :UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature T j =25o C)

Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted)

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3Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Note e :Guaranteed by design, not subject to production testing.

Electrical Characteristics (T A = 25°C unless otherwise noted)

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4Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Typical Operating Characteristics

Power Dissipation

P t o t - P o w e r (W )

T j - Junction T emperature (°C)Drain Current

T j - Junction T emperature

I D - D r a i n C u r r e n t (A )

Thermal Transient Impedance

N o r m a l i z e d T r a n s

i e n t T h e r m a l R e s i s t a n c e Square Wave Pulse Duration (sec)Safe Operation Area

V DS - Drain - Source Voltage (V)I D - D r a i n C u r r e n t (A )

20

40

60

80100120140160

020

40

60

80

100

120

20

40

60

80100120140160

20

40

60

80

100

0.01

0.1110100300

0.11

10

100

1000

1E-6

1E-51E-41E-30.010.1

1E-3

0.01

0.1

1

2

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5Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

V GS - Gate - Source Voltage (V)T j - Junction T emperature (°C)

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6Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Drain-Source On Resistance

N o r m a l i z e d O n R e s i s t a n c e

T j - Junction Temperature (°C)V SD - Source - Drain Voltage (V)Source-Drain Diode Forward

I S - S o u r c e C u r r e n t (A )

V DS - Drain-Source Voltage (V)C - C a p a c i t a n c e (p F )

Capacitance Gate Charge

Q G - Gate Charge (nC)

V G S - G a t e -s o u r c e V o l t a g e (V )

Typical Operating Characteristics (Cont.)

0.0

0.20.40.60.8 1.0 1.2 1.4

0.11

10

100

8

16

24

32

40

01000

200030004000

5000

6000

7000

1

2345678910

-50-250

25

50

75100125150

0.0

0.5

1.0

1.5

2.0

2.5

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7Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

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8Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Package Information

DFN5x6-8

RECOMMENDED LAND PATTERN

UNIT: mm

Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil.

S Y M B O L MIN.MAX.1.200.34.80 5.305.90 6.205.50

5.80

0.053.34 3.9A B D E E1e F F1G H MILLIMETERS C 0.190.251.27 BSC DFN5x6-8

0.350.75MIN.MAX.INCHES

0.0470.0120.050 BSC

0.0070.010

0.1890.209

0.2320.244

0.217

0.228

0.0020.0140.0300.1310.1540.900.0350.510.0200.300.012G1K

0.762

0.03

0.050.300.0020.0120.0300.0140.750.35D1 4.00 4.400.1570.173-

-

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9Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

(mm)

Carrier Tape & Reel Dimensions

SECTION B-B

SECTION A-A

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10Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Classification Profile

Taping Direction Information

DFN5x6-8

USER DIRECTION OF FEED

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11Copyright ? Sinopower Semiconductor, Inc.

Rev. A.3 - November, 2013

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Classification Reflow Profiles

Customer Service

Sinopower Semiconductor, Inc.

5F , No. 6, Dusing 1St Rd., Hsinchu Science Park,Hsinchu, 30078, Taiwan TEL: 886-3-5635818

Fax: 886-3-5642050

Reliability Test Program

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