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PSMN7R0-30YL中文资料

PSMN7R0-30YL

N-channel TrenchMOS logic level FET

Rev. 01 — 15 October 2008Preliminary data sheet 1.Product profile

1.1General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2Features and benefits

High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources

1.3Applications

Class-D amplifiers DC-to-DC converter Motor control

Server power supplies

1.4Quick reference data

Table 1.Quick reference

Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j≥25°C; T j≤150°C--30V

I D drain current T mb=25°C; V GS=10V;

see Figure 1

--65A

P tot total power

dissipation

T mb=25°C; see Figure 2--51W Dynamic characteristics

Q GD gate-drain charge V GS=4.5V; I D=10A;

V DS=12V; see Figure 14;

see Figure 15

- 2.9-nC Static characteristics

R DSon drain-source

on-state resistance V GS=10V; I D=15A;

T j=25°C; see Figure 12;

see Figure 13

- 4.77m?

2.Pinning information

3.Ordering information

4.Limiting values

Table 2.Pinning information Pin Symbol

Description Simplified outline Graphic symbol

1S source SOT669 (LFPAK)

2S source 3S source 4G gate

mounting base; connected to drain

1234

Table 3.Ordering information Type number Package

Name Description

Version

PSMN7R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads

SOT669

Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit V DS drain-source voltage T j ≥25°C; T j ≤150°C

-30V V DGR drain-gate voltage T j ≥25°C; T j ≤150°C; R GS =20k ?

-30V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =100°C; see Figure 1-46A V GS =10V; T mb =25°C; see Figure 1-65A I DM peak drain current t p ≤10μs; pulsed; T mb =25°C; see Figure 3-260A P tot total power dissipation T mb =25°C; see Figure 2-51W T stg storage temperature -55150°C T j junction temperature -55150°C Source-drain diode

I S source current T mb =25°C

-65A I SM peak source current

t p ≤10μs; pulsed; T mb =25°C -260A Avalanche ruggedness

E DS(AL)S

non-repetitive drain-source avalanche energy

V GS =10V; T j(init)=25°C; I D =65A; V sup ≤30V; R GS =50?; unclamped -21

5.Thermal characteristics

Table 5.Thermal characteristics Symbol Parameter

Conditions

Min Typ Max Unit R th(j-mb)

thermal resistance from junction to mounting base

see Figure 4- 1.4

2.45

K/W

6.Characteristics

Table 6.Characteristics

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source

breakdown voltage I D=250μA; V GS=0V; T j=25°C30--V I D=250μA; V GS=0V; T j=-55°C27--V

V GS(th)gate-source threshold

voltage I D=1mA; V DS = V GS; T j=25°C;see

Figure 10; see Figure 11

1.3 1.7

2.15V

I D=1mA; V DS = V GS; T j=150°C; see

Figure 10

0.65--V

I D=1mA; V DS = V GS; T j=-55°C;see

Figure 10

-- 2.45V

I DSS drain leakage current V DS=30V;V GS=0V; T j=25°C--1μA

V DS=30V;V GS=0V; T j=150°C--100μA I GSS gate leakage current V GS=16V; V DS=0V; T j=25°C--100nA

V GS=-16V;V DS=0V; T j=25°C--100nA

R DSon drain-source on-state

resistance V GS=4.5V;I D=15A;T j=25°C; see

Figure 12; see Figure 13

- 6.711.3m?

V GS=10V; I D=15A; T j=150°C; see

Figure 12

--12.2m?

V GS=10V; I D=15A; T j=25°C;see

Figure 12; see Figure 13

- 4.77m?

R G gate resistance f=1MHz-0.6-?Dynamic characteristics

Q G(tot)total gate charge I D=10A; V DS=12V;V GS=4.5V; see

Figure 14; see Figure 15

-10-nC

I D=0A;V DS=0V; V GS=10V-20-nC

I D=10A; V DS=12V;V GS=10V;see

Figure 14; see Figure 15

-22-nC

Q GS gate-source charge I D=10A; V DS=12V;V GS=4.5V; see

Figure 14; see Figure 15- 3.7-nC

Q GS(th)pre-threshold

gate-source charge

- 2.1-nC

Q GS(th-pl)post-threshold

gate-source charge

- 1.6-nC Q GD gate-drain charge- 2.9-nC V GS(pl)gate-source plateau

voltage

V DS=12V;see Figure 14; see Figure 15- 2.6-V

C iss input capacitance V DS=12V;V GS=0V; f=1MHz;

T j=25°C;see Figure 16-1270-pF

C oss output capacitance-255-pF C rss reverse transfer

capacitance

-145-pF

t d(on)turn-on delay time V DS=12V;R L=0.5?; V GS=4.5V;

R G(ext)=4.7?-24-ns

t r rise time-39-ns t d(off)turn-off delay time-30-ns t f fall time-11-ns

Source-drain diode

V SD source-drain voltage I S =25A;V GS =0V; T j =25°C; see Figure 17

-0.88 1.2V t rr reverse recovery time I S =20A;dI S /dt =-100A/μs; V GS =0V; V DS =20V

-30-ns Q r

recovered charge

Table 6.Characteristics …continued Symbol Parameter

Conditions

Min Typ Max Unit

7.Package outline

Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Fig 18.Package outline SOT669 (LFPAK)

8.Revision history

Table 7.Revision history

Document ID Release date Data sheet status Change notice Supersedes PSMN7R0-30YL_120081015Preliminary data sheet--

9.Legal information

9.1

Data sheet status

[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL https://www.wendangku.net/doc/226938496.html, .

9.2Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at https://www.wendangku.net/doc/226938496.html,/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

9.4Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.TrenchMOS — is a trademark of NXP B.V.

10.Contact information

For more information, please visit: https://www.wendangku.net/doc/226938496.html,

For sales office addresses, please send an email to: salesaddresses@https://www.wendangku.net/doc/226938496.html,

Document status [1][2]Product status [3]Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet

Production

This document contains the product specification.

11.Contents

1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1General description . . . . . . . . . . . . . . . . . . . . . .1

1.2Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10

8Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10Contact information. . . . . . . . . . . . . . . . . . . . . .12

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: https://www.wendangku.net/doc/226938496.html,

For sales office addresses, please send an email to: salesaddresses@https://www.wendangku.net/doc/226938496.html,