SIHF840LCS-E3中文资料

Power MOSFET

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

FEATURES

?Ultra Low Gate Charge

?Reduced Gate Drive Requirement ?Enhanced 30 V V GS Rating

?Reduced C iss , C oss , C rss ?Extremely High Frequency Operation

?Repetitive Avalanche Rated ?Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.

These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications.

Note

a.See device orientation.

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting T J = 25 °C, L = 14 mH, R G = 25 Ω, I AS = 8.0 A (see fig. 12).

c.I SD ≤ 8.0 A, dI/dt ≤ 100 A/μs, V DD ≤ V DS , T J ≤ 150 °C.

d. 1.6 mm from cas

e.

https://www.wendangku.net/doc/2f8789228.html,es IRF840LC/SiHF840LC data and test conditions.

PRODUCT SUMMARY

V DS (V)500

R DS(on) (Ω)V GS = 10 V

0.85

Q g (Max.) (nC)39Q gs (nC)10Q gd (nC)19Configuration

Single

(TO-263)

G D S

ORDERING INFORMATION

Package D 2PAK (TO-263)D 2PAK (TO-263)I 2PAK (TO-262)Lead (Pb)-free IRF840LCSPbF -IRF840LCLPbF SiHF840LCS-E3-SiHF840LCL-E3SnPb

IRF840LCS IRF840LCSTRR a IRF840LCL SiHF840LCS

SiHF840LCST a

SiHF840LCL

ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT

U N IT

Drain-Source Voltage V DS

500V

Gate-Source Voltage V GS ± 30Continuous Drain Current V GS at 10 V

T C = 25 °C I D

8.0

A

T C = 100 °C

5.1Pulsed Drain Current a, e I DM 28

Linear Derating Factor

1.0W/°C

Single Pulse Avalanche Energy b, e E AS 510mJ Avalanche Current a

I AR 8.0A Repetiitive Avalanche Energy a E AR 13mJ

Maximum Power Dissipation

T C = 25 °C P D 3.1

W

T A = 25 °C

125

Peak Diode Recovery dV/dt c, e

dV/dt 3.5V/ns

Operating Junction and Storage Temperature Range T J , T stg

- 55 to + 150°C

Soldering Recommendations (Peak Temperature)for 10 s 300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Note

a.When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

https://www.wendangku.net/doc/2f8789228.html,es SiHF840LC data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP.MAX.U

IT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a

R thJA -40°C/W

Maximum Junction-to-Case (Drain)

R thJC

- 1.0

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix TYPICAL CHARACTERISTICS25 °C, unless otherwise noted

Fig. 4 - Normalized On-Resistance vs. Temperature

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms

Fig. 12b - Unclamped Inductive Waveforms

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix Array Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see https://www.wendangku.net/doc/2f8789228.html,/ppg?91068.

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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