TIM7785-16SL中文资料

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR TIM7785-16SL

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION HIGH GAIN

IM3=-45 dBc at Pout= 31.5dBm G1dB=5.5dB at 7.7GHz to 8.5GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED FET HIGH POWER

HERMETICALLY SEALED PACKAGE

P1dB=42.5dBm at 7.7GHz to 8.5GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )

CHARACTERISTICS SYMBOL CONDITIONS UNIT

MIN. TYP.MAX. Output Power at 1dB Gain Compression Point

P 1dB dBm 41.5 42.5?

Power Gain at 1dB Gain Compression Point G 1dB dB 4.5 5.5 ? Drain Current I DS1 A

?

4.4

5.0 Gain Flatness ΔG

dB ? ?

±0.8 Power Added Efficiency ηadd VDS= 10V f= 7.7 to 8.5GHz

% ? 29 ?

3rd Order Intermodulation Distortion IM3 dBc -42 -45 ? Drain Current IDS2 Two-Tone Test Po=31.5dBm

(Single Carrier Level) A ?

4.4

5.0 Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)X Rth(c-c)

°C ? ?

80 Recommended Gate Resistance(Rg): 100 Ω (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25°C )

CHARACTERISTICS SYMBOL CONDITIONS

UNIT

MIN. TYP.

MAX.

Transconductance

Gm V DS = 3V I DS = 6.0A

mS ? 3600? Pinch-off Voltage V GSoff V DS = 3V

I DS = 60mA

V -1.0 -2.5-4.0 Saturated Drain Current I DSS V DS = 3V

V GS = 0V

A

?

10.5

? Gate-Source Breakdown Voltage V GSO I GS = -200μA V -5 ? ?

Thermal Resistance R th(c-c) Channel to Case

°C/W

?

1.5

2.0

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )

CHARACTERISTICS SYMBOL UNIT

RATING

Drain-Source Voltage V DS V 15 Gate-Source Voltage V GS V -5 Drain Current

I DS A 14.0 Total Power Dissipation (Tc= 25 °C) P T W 75 Channel Temperature T ch °C 175 Storage Temperature

T stg

°C

-65 to +175

PACKAGE OUTLINE (2-16G1B)

Unit in mm (1) Gate (2) Source (3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.

RF PERFORMANCE

Output Power (Pout) vs. Frequency

43 42 41 P o u t (d B m )

40

7.7

7.9

8.1

8.3

8.5

Frequency (GHz)

Output Power(Pout) vs. Input Power(Pin)

45

44 43 Pout

ηadd

Pin(dBm)

42

41 40 39 38 37 36

P o u t (d B m )

80 70 ηa d d (%)

60 50 40 30 20

10

29 31 33 35 37 39

POWER DISSIPATION vs. CASE TEMPERATURE

90

60

30 0 0 40 80 120 160 200

Tc (°C)

P T (W )

IM3 vs. Output Power Characteristics

f=5MHz

27

-10

-20 -30

-40 -50 -60 I M 3(d B c )

29 31 33 35 37 Pout(dBm) @Single carrier level