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IXFH26N50P中文资料

IXFH26N50P中文资料

IXFH26N50P中文资料

? 2005 IXYS All rights reserved

G = Gate D = Drain S = Source

TAB = Drain

DS99276A(09/05)

PolarHV TM

Power MOSFET

V DSS =500V I D25=26A R DS(on)

≤230m ?t rr

≤200ns

Avalanche Rated Fast Instrinsic Diode

Features z

International standard packages z

Fast intrinsic diode z

Unclamped Inductive Switching (UIS)rated z

Low package inductance -easy to drive and to protect Advantages z

Easy to mount z

Space savings z

High power density

TO-247 (IXFH)

Symbol Test Conditions

Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.V DSS V GS = 0 V, I D = 250 μA 500V V GS(th)V DS = V GS , I D = 4 mA 3.0

5.0V I GSS V GS = ±30 V DC , V DS = 0±100nA I DSS V DS = V DSS 25

μA V GS = 0 V

T J = 125°C

250μA R DS(on)

V GS = 10 V, I D = 0.5 I D25

230

m ?

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V DSS T J = 25°C to 150°C

500V V DGR T J = 25°C to 150°C; R GS = 1 M ?500V V GSS Continuos ± 30V V GSM Transient ± 40V I D25T C = 25°C

26A I DM T C = 25°C, pulse width limited by T JM 78A I AR T C = 25°C 26A E AR T C = 25°C 40mJ E AS T C = 25°C

1.0J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns T J ≤ 150°C, R G = 4 ?P D T C = 25°C

400

W T J -55 ... +150

°C T JM 150

°C T stg -55 ... +150

°C T L 1.6 mm (0.062 in.) from case for 10 s 300°C Plastic body 260

°C

M d Mounting torque (TO-247) 1.13/10Nm/lb.in.F C Mounting force

(PLUS220SMD)

11..65/2.5..15

N/lb Weight

TO-3P

6g PLUS220 & PLUS220SMD

5

g

IXFH 26N50P IXFV 26N50P IXFV 26N50PS

G

S

D (TAB)

PLUS220SMD (IXFV_S)

G

S

D

PLUS220 (IXFV)

Preliminary Data Sheet

D (TAB)

IXFH26N50P中文资料

(共5页)