STPR1620CT中文资料

STPR1610CT thru 1620CT

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Reverse Recovery Test Conditions:I F =0.5A,I R =1.0A,I RR =0.25A.

V RMS V DC V RRM I (AV)I FSM

V F STPR1610CT

100 70 100

Maximum Average Forward Rectified Current

@T C =120 C Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC Method) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage

Maximum DC Blocking Voltage Maximum forward Voltage Pulse Width =300us Duty cycle

1680C

T J ,T STG

Operating and Storage Temperature Range

-55 to +150

Typical Thermal Resistance

R 0JC

3.0C/W

C J Typical Junction Capacitance per element (Note 1)

80pF I R @T J =100 C

Maximum DC Reverse Current at Rated DC Blocking Voltage 5100uA V

A

A V UNIT V V STPR1620CT

140 200

CHARACTERISTICS

SYMBOL

Maximum Reverse Recovery Time (Note 2)T RR

30ns T P =10ms T P =8.3ms

@T J =25 C 90 200 REVERSE VOLTAGE - 100 to 200 Volts FORWARD CURRENT - 16 Amperes

SEMICONDUCTOR

LITE-ON

1.11.01.251.20I F =8A@T J =25℃I F =8A@T J =125℃I F =16A@T J =25℃I F =16A@T J =125℃

REV. 4, 13-Sep-2001, KTGC06

RATING AND CHARACTERISTIC CURVES STPR1610CT thru STPR1620CT