l High sensitivity (S6801, S6968): 0.63 A/W (l=850 nm) l Directivity: 35 ? (half angle)
l Visible-cut type: S6801-01, S6968-01
l Active area size: φ14 mm (lens diameter)
l Effective active area: 150 mm2l High-speed optical measurement l Optical switch
l Laser radar
S6801/S6968 series is a Si PIN photodiode molded into a plastic package with a φ14 mm lens. Four types are provided, S6801, S6968 with a clear plastic package and S6801-01, S6968-01 with a visible-cut package.
Si PIN photodiode S6801/S6968 series
HAMAMA TSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, T elephone: (81) 53-434-3311, Fax: (81) 53-434-5184, https://www.wendangku.net/doc/2813936829.html,
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P .O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., T elephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, T elephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule T rapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, T elephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 T ewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, T elephone: (44) 1707-294888, Fax: (44) 1707-325777North Europe: Hamamatsu Photonics Norden AB: Smidesv ?gen 12, SE-171 41 Solna, Sweden, T elephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, T elephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMA TSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ?2006 Hamamatsu Photonics K.K.
Cat. N o. K PIN1046E02Jun 2006 DN
s Spectral response
KPINB0205EC
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
D A R K C U R R
E N T
KPINB0345EA
WAVELENGTH (nm)
P H O T O S E N S I T I V I T Y (A /W )
00.1
0.20.3
0.40.80.7
WAVELENGTH (nm)
P H O T O S E N S I T I V I T Y (A /W )
0.50.6
KPINB0214EA
KPINB0241EB
s Cut-off frequency vs. reverse voltage
L C U T -O F F F R E Q U E N C Y (M H z )
REVERSE VOLTAGE (V)
s T erminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
T E R M I N A L C A P A C I T A N C E
KPINB0207EB
KPINB0211EA
s Directivity
90?
80?70?60?50?30?RELATIVE SENSITIVITY
40??
? ? ?
? ?
?
(Typ. Ta=25 ?C)
s Dimensional outline
(unit: mm, tolerance unless otherwise noted: ±0.1)
KPINA0044EA