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IRG4PC40S中文资料

Parameter

Max.

Units

V CES

Collector-to-Emitter Breakdown Voltage 600V I C @ T C = 25°C Continuous Collector Current 60I C @ T C = 100°C Continuous Collector Current 31A

I CM Pulsed Collector Current Q

120I LM Clamped Inductive Load Current R 120V GE Gate-to-Emitter Voltage

± 20V E ARV

Reverse Voltage Avalanche Energy S 15mJ P D @ T C = 25°C Maximum Power Dissipation 160P D @ T C = 100°C Maximum Power Dissipation 65

T J Operating Junction and

-55 to + 150

T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf?in (1.1N?m)

IRG4PC40S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD 91465B

Features

? Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)? Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than Generation 3

? Industry standard TO-247AC package

?? IGBT's optimized for specified application conditions ? Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Benefits

12/30/00

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

–––0.77R θCS Case-to-Sink, Flat, Greased Surface

0.24–––°C/W R θJA Junction-to-Ambient, typical socket mount –––40Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

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IRG4PC40S

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Parameter

Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—100150I C = 31A Q ge Gate - Emitter Charge (turn-on)—1421nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on)—3451V GE = 15V t d(on)Turn-On Delay Time —22—t r Rise Time

—18—T J = 25°C

t d(off)Turn-Off Delay Time —650980I C = 31A, V CC = 480V t f Fall Time

—380570V GE = 15V, R G = 10?E on Turn-On Switching Loss —0.45—Energy losses include "tail"E off Turn-Off Switching Loss — 6.5—mJ See Fig. 10, 11, 13, 14E ts Total Switching Loss — 6.959.9t d(on)Turn-On Delay Time —23—T J = 150°C,t r Rise Time

—21—I C = 31A, V CC = 480V

t d(off)Turn-Off Delay Time —1000—V GE = 15V, R G = 10?t f Fall Time

—940—Energy losses include "tail"E ts Total Switching Loss

—12—mJ See Fig. 13, 14L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —2200—V GE = 0V C oes Output Capacitance

—140—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance

—

—? = 1.0MHz

Parameter Min.Typ.

Max.Units Conditions

V (BR)CES Collector-to-Emitter Breakdown Voltage 600—

—V V GE = 0V, I C = 250μA V (BR)ECS

Emitter-to-Collector Breakdown Voltage T 18——V V GE = 0V, I C = 1.0A ?V (BR)CES /?T J Temperature Coeff. of Breakdown Voltage —0.75

—V/°C V GE = 0V, I C = 1.0mA — 1.32

1.5 I C = 31A V GE = 15V V CE(ON)Collector-to-Emitter Saturation Voltage — 1.68

— I C = 60A See Fig.2, 5

— 1.32

— I C = 31A , T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250μA ?V GE(th)/?T J Temperature Coeff. of Threshold Voltage —-9.3—mV/°C V CE = V GE , I C = 250μA g fe Forward Transconductance U 1221

—S V CE = 100V, I C = 31A ——

250V GE = 0V, V CE = 600V

—— 2.0V GE = 0V, V CE = 10V, T J = 25°C ——

1000V GE = 0V, V CE = 600V, T J = 150°C I GES Gate-to-Emitter Leakage Current ——

±100nA V GE = ±20V

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

I CES Zero Gate Voltage Collector Current

μA

Switching Characteristics @ T J = 25°C (unless otherwise specified)

T Pulse width ≤ 80μs; duty factor ≤ 0.1%.U Pulse width 5.0μs, single shot.

Notes:

Q Repetitive rating; V GE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R V CC = 80%(V CES ), V GE = 20V, L = 10μH, R G = 10?,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

IRG4PC40S

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Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

110

10010000.1

C E

C I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

V , Collector-to-Emitter Voltage (V)

020

0.1

100

f, Frequen cy (kH z)

L o a d C u r r e n t (A )

110

100

1000

I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )GE

V , Gate-to-Emitter Voltage (V)

IRG4PC40S

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1.01.5

2.0

-60

-40

-20

100120140160

C E

V , C o l l e c t o r -t o -E m i t t e r V o l t a g e (V )

T , Ju nction T em perature (°C )

J 0.01

0.1

0.00001

0.00010.0010.010.1110

t , Rectangular Pulse Duration (sec)1

t h J C

T h e r m a l R e s p o n s e (Z )

010

3040

100

125

150

M a x i m u m D C C o l l e c t o r C u r r e n t (A )

T , Case Temperature (°C)C

IRG4PC40S

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Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage 01000

2000

3000

4000

100

CE C , C a p a c i t a n c e (p F )

V , Collector-to-Em itter Voltage (V)

100

120

E V , G a t e -t o -E m i t t e r V o l t a g e (V )

Q , Total Gate Charge (nC)7.3

7.4

7.5

7.6

7.7

7.8

T o t a l S w i t c h i n g L o s s e s (m J )

R , Gate Resistance (?)110

100

-60

-40

-20

100

120140

160

T o t a l S w i t

c h i n g L o s s e s (m J )

T , Junction Temperature (°C)J

IRG4PC40S

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Fig. 12 - Turn-Off SOA

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

010

2030

T o t a l S w i t c h i n g L o s s e s (m J )

I , Collector-to-Emitter Current (A)

110

100

1000

100

1000

C E

V , Collector-to-Em itter Voltage (V)I , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )

IRG4PC40S

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480V

X C @

* Note: Due to the 50V pow er supply, pulse width and inductor w ill increase to obtain rated Id.

Fig. 13a - Clamped Inductive

Load Test Circuit

Fig. 13b - Pulsed Collector

Current Test Circuit

ts o n off

E = (E +E )Fig. 14b - Switching Loss

Waveforms

Fig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 480V

IRG4PC40S

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Case Outline and Dimensions TO-247AC

D im e n sion s in M illim e te rs a n d (In ch es )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

- D -

5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140)

2.50 (.089)1.50 (.059)

0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)

3.40 (.133)3.00 (.118)

0.25 (.010)M

C A S

4.30 (.170)3.70 (.145)

- C -

5.50 (.217)4.50 (.177)

5.50 (.217)

0.25 (.010)1.40 (.056)1.00 (.039)D M M

B - A -15.90 (.626)15.30 (.602)

- B -

20.30 (.800)19.70 (.775)

14.80 (.583)14.20 (.559)

2.40 (.094)2.00 (.079)

2X 2X

5.45 (.215)

N O TE S :

1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.

2 C O N TR O LLIN G D IM E N S IO N : IN C H.

3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C H E S ).

4 C O N FO R M S TO

JE D E C O U TLIN E T O -247AC.

LE A D A S S IG N M E N T S 1 - G A T E

2 - C O LLE C TO R

3 - EM IT TE R

4 - C O LLE C TO R

LO N G E R LE A D ED (20m m )

V E R S IO N A V A ILA B LE (TO -247A D )T O O R D E R A D D "-E " S U FF IX T O P A R T N U M B ER

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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Data and specifications subject to change without notice. 12/00