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CXK5B16120J-12中文资料

CXK5B16120J/TM-12

65536-word ×16-bit High Speed Bi-CMOS Static RAM

Description

CXK5B16120J/TM is a high speed 1M bit Bi-

CMOS static RAM organized as 65536 words by 16

bits. Operating on a single 3.3V supply this

asynchronous IC is suitable for use in high speed

and low power applications.

Features

?Single 3.3V Supply 3.3V±0.3V

?Fast access time12ns (Max.)

?Low stand-by current:10mA (Max.)

?Low power operation972mW (Max.)

?Package line-up

Dual Vcc/Vss

CXK5B16120J400mil44pin SOJ Package

CXK5B16120TM400mil44pin TSOP Package

Function

65536-word ×16-bit static RAM

Structure

Silicon gate Bi-CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Block Diagram Pin Description

Symbol

A0 to A15

I/O1

to I/O8

I/O9

to I/O16

Vcc

GND

Address input

Data input output

(lower byte I/O)

Data input output

(upper byte I/O)

Chip enable input

Write enable input

Output enable input

Lower byte select input

Upper byte select input

+3.3V Power supply

Ground

No connection

Description

CXK5B16120J

44 pin SOJ (Plastic)

CXK5B16120TM

44 pin TSOP (Plastic) For the availability of this product, please contact the sales office.

V CC

V IN V I/O P D Topr Tstg J TM

Tsolder

–0.5?1to +4.6–0.5?1to V CC + 0.5–0.5?1to V CC + 0.5

1.5?20 to +70–55 to +150260 ? 10235 ? 10

V V V W °C °C °C ? sec °C ? sec

Item

Symbol Rating Unit Supply voltage Input high voltage Input low voltage

Item

Symbol Min.Typ.Max.Unit V CC V IH V IL

3.02.0–0.3?

3.3——

3.6V CC + 0.30.8

V V V

Absolute Maximum Ratings

(Ta = 25°C, GND = 0V)Truth Table CE H

L L

×H ×

H ×

×L

L H H L

L H

×H

×L H L H L H L ×H

Not selected

Read Read Read Not selected Write Write Write

Output disable Not selected

High Z Data Out Data Out High Z High Z Data in Data in High Z High Z High Z

High Z Data out High Z Data out High Z Data in High Z Data in High Z High Z

I SB1, I SB2I CC I CC I CC I CC I CC I CC I CC I CC I CC

OE WE LB UB Mode I/O1 to I/O8I/O9 to I/O16Current Recommended Operating Conditions

(Ta = 0 to +70°C, GND = 0V)~: “H” or “L”

V IL = –2.0V Min. for pulse width less than 5ns

?1Vcc, V IN , V I/O = –2.0V Min. for pulse width less than 5ns ?2Air Flow ≥1m/s

Supply voltage Input voltage

Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature ? time

Electrical Characteristics DC Characteristics

(Vcc = 3.3V±0.3V, GND = 0V, Ta = 0 to +70°C)

Item

Symbol Conditions V IN = GND to Vcc

CE = V IH or OE = V IH or WE = V IL or

UB = V IH or LB = V IH V I/O = GND to Vcc

Min. Cycle Duty =100%

I OUT = 0mA, CE = V IL , V IN = V IH or V IL CE ≥Vcc – 0.2V

V IN ≥Vcc – 0.2V or V IN ≤0.2V Min. Cycle Duty =100%

CE = V IH , V IN = V IH or V IL I OH = –2.0mA I OL = 2.0mA

–10–10

———2.4—

——

—————

+10+10

27010100—0.4

μA μA

mA V V

Input leakage current Output leakage current

Average operating current

Standby current

Output high voltage Output low voltage I LI I LO

I CC I SB1

I SB2

V OH V OL

Min.Typ.?Max.Unit

*Vcc = 3.3V, Ta = 25°C

I/O Capacitance

(Ta = 25°C, f = 1MHz)Item

Input capacitance I/O capacitance

C IN C I/O

V IN = 0V V I/O = 0V

——

pF pF

Symbol Conditions Min.Typ.Max.Unit AC Characteristics ?AC test condition

(Vcc = 3.3V±0.3V, Ta = 0 to +70°C)

Item

Input pulse high level Input pulse low level Input rise time Input fall time

Input and output reference level Output load conditions

V IH = 3.0V V IL = 0.0V

t r = 2ns t f = 2ns

1.4V Fig. 1

Condition L =50?L ?

Output load (1)Output load (2)*1

*1. For t LZ , t OLZ , t LBLZ , t UBLZ , t HZ , t OHZ , t LBHZ , t UBHZ , t OW , t WHZ *2. Including scope and jig capacitances.

Fig. 1

Note)This parameter is sampled and is not 100% tested.

?Read cycle

Item

Read cycle time

Address access time

Chip enable access time

Output enable to output valid

Byte select to output valid

Output data hold time

Chip enable to output in low Z (CE) Output enable to output in low Z (OE) Byte select to output in low Z (LB, UB) Chip disable to output in high Z (CE) Output disable to output in high Z (OE) Byte select to output in high Z (LB, UB)

—

ns t RC

t AA

t CO

t OE

t LB C t UB

t OH

t LZ?

t OLZ?

t LBLZ, t UBLZ?

t HZ?

t OHZ?

t LBHZ, t UBHZ?

Symbol

-12

Min.Max.

Unit

?Write cycle

Item

Write cycle time

Address valid to end of write Chip enable to end of write Byte select to end of write Data valid to end to write

Data hold from end of write Write pulse width

Address set up time

Write recovery time

Output active from end of write Write to output in high Z

—

ns t WC

t AW

t CW

t LBW, t UBW

t DW

t DH

t WP

t AS

t WR

t OW*

t WHZ*

Symbol

-12

Min.Max.

Unit

?Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2). This parameter is sampled and is not 100% tested.

Timing Waveform

?Read cycle (1) : CE = OE = V IL, WE = V IH

Address

Data out

?Read cycle (2) : WE = V IH Array

Address

LB, UB

Data out

?Write cycle (1) : WE control

Address

Data out

Data in

LB, UB

?Write cycle (2) : CE control

Address

Data out

Data in LB, UB

?Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

?Write cycle (3) : LB, UB control

Address

Data out

Data in

LB, UB

?Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

CXK5B16120J/TM

Example of Representative Characteristics

Supply current vs. Frequency

100

25501.0

0.750.50.250

I C C – S u p p l y c u r r e n t [N o r m a l i z e d ]

Supply current vs. Supply voltage

V CC – Supply voltage [V]

3.45 3.6

3.15 3.33.0

1.4

1.2

1.00.8

0.6I C C – S u p p l y c u r r e n t [N o r m a l i z e d

]

Supply current vs. Ambient temperature

Ta – Ambient temperature [°C]

6080

20400

1.4

1.2

1.0

0.8

0.6

I C C – S u p p l y c u r r e n t [N o r m a l i z e d ]

Access time vs. Load capacitance

L – Load capacitance [pF]

120

160

40800

1.8

1.6

1.4

1.2

1.0

t A A , t C O , t O E – A c c e s s t i m e [N o r m a l i z e d ]

Frequency (1 / t RC , 1

/ t WC ) [MHz]0

Ta – Ambient temperature [°C]

6080

20400

1.4

1.2

1.0

0.8

0.6

Access time vs. Supply voltage

V CC – Supply voltage [V]

3.45 3.6

3.15 3.33.0

1.4

1.21.0

0.8

0.6t A A , t C O , t O E – A c c e s s t i m e [N o r m a l i z e d ]

t AA t A A , t C O , t O E – A c c e s s t i m e [N o r m a l i z e d ]

Access time vs. Load capacitance

t CO t OE

t AA t CO t OE

12ns

Input voltage level vs. Supply voltage

V I L , V I H – I n p u t v o l t a g e [N o r m a l i z e d ]

Standby current vs. Supply voltage

V CC – Supply voltage [V]

3.45 3.6

3.15 3.33.0

1.4

1.2

1.00.8

0.6

I S B 1, I S B 2

– S t a n d b y c u r r e n t [N o r m a l i z e d ]

Standby current vs. Ambient temperature

Ta – Ambient temperature[°C]

6080

20400

1.4

1.2

1.0

0.8

0.6

I S B 1 – S t a n d b y c u r r e n t [N o r m a l i z e d ]

Standby current vs. Ambient temperature

Ta – Ambient temperature[°C]

6080

20400

1.4

1.2

1.0

0.8

0.6

I S B 2 – S t a n d b y c u r r e n t [N o r m a l i z e d ]

V CC – Supply voltage [V]

3.45 3.6

3.15 3.33.0

1.2

1.1

1.00.9

0.8V OL – Output low voltage [V]

0.60.8

0.20.40

1.8

1.4

1.0

0.6

0.2

Output high current vs. Output high voltage

V OH – Output high voltage [V]

3.0

4.0

1.0

2.00.0

4.0

3.0

2.01.0

0.0I O H – O u t p u t h i g h c u r r e n t [N o r m a l i z e d ]

I O L – O u t p u t l o w c u r r e n t [N o r m a l i z e d ]

Output low current vs. Output low voltage

V IH V IL

I SB2

I SB1

Package Outline Unit: mm

CXK5B16120J

SONY CODE

EIAJ CODE

JEDEC CODE

PACKAGE STRUCTURE

PACKAGE MATERIAL

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

EPOXY RESIN

SOLDER PLATING

COPPER ALLOY

44PIN SOJ (PLASTIC) 400mil

SOJ-44P-01

?SOJ044-P-0400-A

+ 0.4

1.9g

CXK5B16120TM

SONY CODE

EIAJ CODE

JEDEC CODE

PACKAGE STRUCTURE

MOLDING COMPOUND

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

EPOXY / PHENOL RESIN

SOLDER PLATING

42 ALLOY

44PIN TSOP (II) (PLASTIC) 400mil

0.32 ± 0.08

(0.3)

(

)

0° to 10°

0.1 – 0.05

+ 0.1

TSOP (II) -44P-L01

TSOP (II) 044-P-0400-A

DETAIL A

DETAIL

0.5g

NOTE: Dimension “?” does not include mold protrusion.