DH71100-70中文资料

TUNING VARACTOR

Selection Guide

PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR1-32

HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR

-VBR = 30 V1-34 -VBR = 45 V1-35 SILICON HYPERABRUPT JUNCTION TUNING VARACTOR1-36 MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR1-39 A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers.

Description

This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.Applications

The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned ?lters, phase shifters, delay line, etc.

NOTE : Variation of the junction capacitance versus reverse voltage follows this equation:

C j (V r

) C j (0 V)1 + V r

V r : Reverse

voltage φ: Built-in potential .7V for Si

γ: .5 for abrupt tuning varactor

[ ]

SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR

γ

=

Electrical characteristics at T a = +25°C

Reverse breakdown voltage, Vb = @10 μA: 30 V min.

T emperature ranges:

Operating junction (T j): -55°C to +125°C Storage:-65°C to +150°C Packages

(1) Other con?guration available on request.

How to order?

DH71010-51T3

Diode type Package Conditioning

information

51: single SOT23T3: 3000 pieces

53: dual common tape & reel

cathode SOT23T10: 10000 pieces

54: dual common tape & reel

anode SOT23blank: bulk

60: single SOD323

70: dual SOT143

V BR 30V

This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.

Description

(1)Custom cases available on request

T emperature ranges:

(2)Closer capacitance tolerances available on request Operating junction (T j ):-55°C to +150°C (3)C = C + C Storage

:-65°C to +175°C

This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to X band.

Description

V BR 45V

PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR

Description

This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. T his family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application

The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance). Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned ?lters, phase shifters, delay lines...

20 Volt hyperabrupt junction varactors

Characteristics @ T a=+25°C T emperature ranges:

Reverse breakdown voltage, Vb = 20 V min. @ 10 μA Operating junction (Tj) : -55°C to +125°C Reverse Current, Ir = 200 nA @ 16 V Storage : -55°C to +150°C

12 Volt hyperabrupt junction varactors

Characteristics @ T a=+25°C T emperature ranges:

Reverse breakdown voltage, Vb = 12 V min. @ 10 μA Operating junction (Tj) : -55°C to +125°C Reverse Current, Ir = 200 nA @ 8 V Storage : -55°C to +150°C

T ypical junction capacitance versus reverse voltage

VR (V)

V (V)

C j (p F )

Packages

(1) Other con?guration available on request.

How to order?

DH76150-51T3

Diode type Package Conditioning

information

51: single SOT23T3: 3000 pieces

53: dual common tape & reel

cathode SOT23T10: 10000 pieces

54: dual common tape & reel

anode SOT23blank: bulk

60: single SOD323

70: dual SOT143

HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR

Description

This series of silicon tuning varactors consists of hyperabrupt epitaxial devices.

They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from VHF up to Ku band.

Characteristics @ T a = +25°C

Reverse breakdown voltage, Vb = @ 10 μA:20 V min.Reverse current, Ir @ 16 V: 200 nA

(1)

Custom cases available on request

T emperature ranges:

Operating junction (T j ):-55°C to +150°C Storage

:-65°C to +150°C

T ypical junction capacitance reverse voltage