DMBTA14中文资料

TECHNICAL SPECIFICA TIONS OF NPN DARLINGTON TRANSISTOR

Description

Designed for applications requiring high current gain.

Pinning

1 = Base

2 = Emitter

3 = Collector

Dimensions in inches and (millimeters)

.063(1.60).055(1.40).108(0.65).089(0.25)

.045(1.15).034(0.85)

.051(1.30).035(0.90)

Max C haracteristic

Symbol Rating Unit Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V Emitter-Base Voltage V EBO 10 V Collector Current I C 300 mA Total Power Dissipation P D 225 mW

Junction Temperature T J +150 o C

Storage Temperature

T STG

-55 to +150

o

C

Absolute Maximum Ratings (T A =25o C)

C haracteristic

Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BV CBO 30 - - V I C =100μA Collector-Emitter Breakdown Voltage BV CES 30 - - V I C =100μA Emitter-Base Breakdown Volatge BV EBO 10 - - V I E =10μA Collector Cutoff Current I CBO - - 100 nA V CB =30V Emitter Cutoff Current

I EBO

- - 100 nA V EB =10V

Collector-Emitter Saturation Voltage (1)

V CE(sat) - - 1.5 V I C =100mA, I B =0.1mA Base-Emitter On Voltage V BE(on) - - 2 V I C =100mA, V CE =5V DC Current Gain (1) h FE1 10K - - - I C =10mA, V CE =5V h FE2 20K - - - I C =100mA, V CE =5V

Transition Frequency

f T

125

- - MHz I C =10mA, V CE =5V, f=100MHz Output Capacitance C ob - -

6

pF

V CB =10V, f=1MHz

Electrical Characteristics (Ratings at 25o

C ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width 380μs, Duty Cycle 2%

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