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BC807-16-GS08中文资料

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Small Signal Transistors (PNP)

Features

?PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ?Especially suited for automatic insertion in thick and thin-film circuits.

?These transistors are subdivided into three groups (- 16, - 25, and - 40) according to their current gain.

?As complementary types, the NPN transistors BC817 and BC818 are recomended.

Mechanical Data

Case: SOT-23 Plastic case Weight: approx. 8.8 mg

Pinning: 1 = Base, 2 = Emitter, 3 = Collector Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Device on fiberglass substrate, see layout on next page.

Part

Ordering code

Marking

Remarks

BC807-16BC807-16-GS085A T ape and Reel BC807-25BC807-25-GS085B T ape and Reel BC807-40BC807-40-GS085C T ape and Reel BC808-16BC808-16-GS085E T ape and Reel BC808-25BC808-25-GS085F T ape and Reel BC808-40

BC808-40-GS08

T ape and Reel

Parameter

T est condition Part Symbol Value Unit Collector - emitter voltage (Base shorted)

BC807- V CES 50V BC808- V CES 30V Collector - emitter voltage (Base open)

BC807- V CEO 45V BC808

- V CEO 25V Emitter - base voltage - V EBO 5V Collector current - I C 800mA Peak collector current - I CM 1000mA Peak base current - I BM 200mA Peak emitter current I EM 1000mA Power dissipation

P tot

3101)

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Maximum Thermal Resistance

Device on fiberglass substrate, see layout on next page.

Electrical DC Characteristics

Electrical AC Characteristics

Parameter

Test condition Symbol Value Unit Thermal resistance junction to ambient air

R θJA 4501)°C/W Thermal resistance junction to substrate backside R θSB 3201)°C/W Junction temperature T j 150°C Storage temperature range

T S

- 65 to + 150

°C

Parameter

Test condition

Part

Symbol Min T yp

Max Unit

DC current gain (current gain group - 16)

- V CE = 1 V , - I C = 100 mA h FE 100250DC current gain (current gain group - 25)

- V CE = 1 V , - I C = 100 mA h FE 160400DC current gain (current gain group - 40)- V CE = 1 V , - I C = 100 mA h FE 250600

DC current gain

- V CE = 1 V , - I C = 500 mA h FE 40

Collector saturation voltage - I C = 500 mA, - I B = 50 mA - V CEsat 0.7V Base saturation voltage - I C = 500 mA, - I B = 50 mA V BEsat 1.3V Base - emitter voltage

- V CE = 1 V , - I C = 500 mA

- V BEon 1.2V Collector - emitter cutoff current - V CE = 45 V

BC807- I CES 100nA - V CE = 25 V

BC808

- I CES 100nA - V CE = 25 V , T j = 150°C

- I CES 5μA Emitter - base cutoff current

- V EB = 4 V

- I EBO

100

Parameter

Test condition

Symbol Min

T yp Max

Unit Gain - bandwidth product - V CE = 5 V , - I C = 10 mA, f = 50 MHz

f T 100MHz Collector - base capacitance

- V CB = 10 V , f = 1 MHz

C CBO

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Layout for R θJA test

Thickness: Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Admissible Power Dissipation vs. Temperature of

Substrate Backside

m W 0

°C

19190

Figure 2. Collector Current vs. Base-Emitter Voltage

mA 10

-1

-I 19177

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Figure 3. Pulse Thermal Resistance vs. Pulse Duration

(normalized)

Figure 4. Gain-Bandwidth Product vs. Collector Current Figure

5. Collector Saturation Voltage vs. Collector Current 1s

101010101010-1-2-3

-4-5-6

t p

1019191

MHz

210

f T

19192

V 0.30

-V 19193

Figure 6. DC Current Gain vs. Collector Current

Figure 7. Base Saturation Voltage vs. Collector Current

Figure

8. Common Emitter Collector Characteristics

1000

h 19173

V 2

-V 19194

mA 500

400

300

2001000

-I C

V CE

-I =0.2mA

B 0.4

0.60.811.21.41.61.822.42.8

3.2

19175

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Package Dimensions in mm (Inches)

Figure

9. Common Emitter Collector Characteristics mA

806040

-I 19176

Figure 10. Common Emitter Collector Characteristics

19174

-I

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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