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长电2N4402三极管规格书

长电2N4402三极管规格书

A,Dec,2010

3. COLLECTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2N4402 TRANSISTOR (PNP)

FEATURES

z General Purpose Amplifier Transistor

MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter

Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -0.1mA,I E =

0 -40 V Collector-emitter breakdown voltage V (BR)CEO

I C =-1mA,I B =

0 -40 V Emitter-base breakdown voltage V (BR)EBO

I E =-0.1mA,I C =0 -5

V

Collector cut-off current I CBO V CB =-40V,I E =

0 -0.1μA Emitter cut-off current

I EBO

V EB =-4V,I C =

0 -0.1μ

A

V CE =-1V, I C =-1mA 30

V CE =-1V, I C =

-10mA 50 V CE =-2V, I C =

-150mA

50 150

DC current gain

h FE *

V CE =-2V, I C =

-500mA 20

I C =-150mA,I B =-15mA -0.4V Collector-emitter saturation voltage V CE(sat)* I C =-500mA,I B =

-50mA -0.75V

I C =-150mA,I B =-15mA -0.75 -0.95V Base-emitter saturation voltage V BE

(sat)*

I C =-500mA,I B =-50mA -1.3V

Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz

8.5 pF Emitter input capacitance C ib V EB =-0.5V,I C =0, f=1MHz

30 pF Transition frequency

f T

V CE =-10V,I C =-20mA, f=100MHz

150

MHz

*Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%.

Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current

-0.6 A P C Collector Power Dissipation

625 mW R θJA Thermal Resistance From Junction To Ambient 200 ℃/W T j Junction Temperature 150 ℃ T stg

Storage Temperature

-55~+150

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MPS3702三极管

A,Dec,2010 3.COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPS3702 TRANSISTOR (PNP) FEATURES z General Purpose Amplifier Transistor MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -0.1mA,I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-0.1mA,I C = 0 -5 V Collector cut-off current I CBO V CB =-20V,I E = 0 -0.1 μA Emitter cut-off current I EBO V EB =-3V,I C =0 -0.1 μ A DC current gain h FE * V CE =-5V, I C = -50mA 60 300 Collector-emitter saturation voltage V CE(sat) * I C =-50mA,I B =-5mA -0.25V Base-emitter voltage V BE * I C =-50mA, V CE =-5V -0.6 -1.0 V Current gain-bandwidth product f T V CE =-5V,I C =-50mA,f=20MHz 100 MHz Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 12 pF *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%. Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.8 A P C Collector Power Dissipation 625 mW R θJA Thermal Resistance From Junction To Ambient 200 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃

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B,Aug ,2012 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR (PNP) FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -600 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -600 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C = 0 -7 V Collector cut-off current I CBO V CB =-600V,I E = 0 -10 μA Emitter cut-off current I EBO V EB =-7V,I C = 0 -10 μA h FE(1)* V CE =-5V, I C = -0.1A 30 120 DC current gain h FE(2)* V CE =-5V, I C =-0.5A 5 Collector-emitter saturation voltage V CE(sat) * I C =-0.3A,I B =-0.06A -0.5V Base-emitter saturation voltage V BE(sat)* I C =-0.3A,I B =-0.06A -1.2V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 50 pF Transition frequency f T V CE =-10V,I C =-0.1A 10 MHz *Pulse test: pulse width ≤350μs, duty cycle ≤ 2.0%. CLASSIFICATION OF h FE(1) RANK M L K RANGE 30-60 40-80 60-120 Symbol Para me ter V alue Unit V CBO Collector-Base Voltage -600 V V CEO Collector-Emitter Voltage -600 V V EBO Emitter-Base Voltage -7 V I C Collector Current -1 A P C Collector Power Dissipation 1.25 W R θJA Thermal Resistance From Junction To Ambient 100 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.wendangku.net/doc/309757777.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) FEATURES z High Transition Frequency MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E =0 160 V Collector-emitter breakdown voltage V (BR)CEO * I C =10mA,I B = 0 160 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C = 0 5 V Collector cut-off current I CBO V CB =160V,I E = 0 1 μA Emitter cut-off current I EBO V EB =5V,I C = 0 1 μA DC current gain h FE V CE =5V, I C = 100mA 70 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1.5 V Base-emitter voltage V BE V CE =5V, I C = 500mA 1 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 25 pF Transition frequency f T V CE =10V,I C =100mA, 100 MHz *Pulse test CLASSIFICATION OF h FE RANK O Y RANGE 70-140 120-240 Symbol Parameter Value Unit V CBO Collector-Base Voltage 160 V V CEO Collector-Emitter Voltage 160 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1.5 A P C Collector Power Dissipation 1 W R θJA Thermal Resistance From Junction To Ambient 125 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ B,Aug,2012 https://www.wendangku.net/doc/309757777.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

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