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AP20G06GD 20A 60V TO-252-4

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司

Description

The AP20G06GD uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a

Battery protection or in other Switching application.

General Features

V DS = 60V I D =23 A R DS(ON) < 32mΩ @ V GS =10V V DS = -60V I D =18A R DS(ON) < 70mΩ @ V GS =10V

Application

Battery protection Load switch

Uninterruptible power supply

Product ID Pack Marking

Qty(PCS) AP20G06GD

TO-252-4

AP20G06GD XXX YYYY

2500

Symbol Parameter Rating

Units N-Channel P-Channel

V DS Drain-Source Voltage 60 -60 V V GS Gate-Sou r ce Voltage

±20 ±20 V I D @T C =25℃ Continuous Drain Current, V GS @ 10V 1 23 -18 A I D @T C =100℃ Continuous Drain Current, V GS @ 10V 1 15 -11 A I D @T A =25℃ Continuous Drain Current, V GS @ 10V 1 5.6 -4.3 A I D @T A =70℃

Continuous Drain Current, V GS @ 10V 1

4.5 -3.5 A I DM Pulsed Drain Current 2 46 -36 A EAS Single Pulse Avalanche Energy 3

34.5 51.2 mJ I AS Avalanche Current 22.6 -26.6 A P D @T C =25℃ Total Power Dissipation 4 34.7 34.7 W P D @T A =25℃

Total Power Dissipation 4 2 2 W T STG Storage Temperature Range -55 to 150 -55 to 150 ℃ T J Operating Junction Temperature Range -55 to 150

-55 to 150

℃ R θJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W R θJC

Thermal Resistance Junction-Case 1

---

3.6

℃/W

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司

Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =250uA 60 --- --- V △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D =1mA

--- 0.063 --- V/℃

R DS(ON) Static Drain-Source On-Resistance 2 V GS =10V , I D =15A

--- --- 32 m Ω V GS =4.5V , I D =10A --- ---

38 V GS(th) Gate Threshold Voltage

V GS =V DS , I D =250uA

1.2 ---

2.5 V △V GS(th) V GS(th) Temperature Coefficient --- -5.24 --- mV/℃ I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS =0V --- --- ±100 nA gfs Forward Transconductance V DS =5V , I D =15A --- 17 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz

--- 3.2 --- Q g Total Gate Charge (4.5V) V DS =48V , V GS =4.5V , I D =12A

--- 12.56 --- nC Q gs Gate-Source Charge --- 3.24 --- Q gd Gate-Drain Charge --- 6.31 --- T d(on) Turn-On Delay Time V DD =30V , V GS =10V , R G =3.3, I D =10A

---

8 --- ns T r Rise Time --- 14.2 --- T d(off) Turn-Off Delay Time --- 24.4 --- T f Fall Time --- 4.6 --- C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz

--- 1378 --- pF C oss Output Capacitance --- 86 --- C rss Reverse Transfer Capacitance --- 64 --- I S Continuous Source Current 1,5 V G =V D =0V , Force Current --- --- 23 A I SM Pulsed Source Current 2,5 --- --- 46 A V SD

Diode Forward Voltage 2

V GS =0V , I S =1A , T J =25℃

---

1.2

V 1.The data tested by surface mounted on a 1 inch

FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =22.6A

4.The power dissipation is limited by 150℃ junction temperature

5 .The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司3

J Symbol Parameter

Conditions

Min. Typ. Max. Unit BV DSS

Drain-Source Breakdown Voltage

V GS =0V , I D =-250uA -60 --- --- V △BV DSS /△T J BV DSS Temperature Coefficient

Reference to 25℃ , I D =-1mA --- -0.03 --- V/℃

R DS(ON) Static Drain-Source On-Resistance 2 V GS =-10V , I D =-12A

--- --- 70 m Ω V GS =-4.5V , I D =-8A --- --- 105 V GS(th) Gate Threshold Voltage V GS =V DS , I D =-250uA

-1.2 --- -2.5 V △V GS(th) V GS(th) Temperature Coefficient --- 4.56 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =-48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS =0V --- --- ±100 nA gfs Forward Transconductance V DS =-5V , I D =-12A --- 15 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz

--- 13.5 --- Ω Q g Total Gate Charge (-4.5V) V DS =-48V , V GS =-4.5V , I D =-12A ---

9.86 --- nC Q gs Gate-Source Charge ---

3.08 --- Q gd Gate-Drain Charge --- 2.95 --- T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V

R G =3.3, I D =-1A

---

28.8 --- ns T r Rise Time --- 19.8 --- T d(off) Turn-Off Delay Time --- 60.8 --- T f Fall Time --- 7.2 --- C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz

---

1447 --- pF C oss Output Capacitance --- 97 --- C rss Reverse Transfer Capacitance --- 70 --- I S Continuous Source Current 1,5 V G =V D =0V , Force Current --- --- -18 A I SM Pulsed Source Current 2,5 --- --- -36 A V SD

Diode Forward Voltage 2

V GS =0V , I S =-1A , T J =25℃

---

-1.2

V 1.The data tested by surface mounted on a 1 inch

FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-26.6A

4.The power dissipation is limited by 150℃ junction temperature

5 .The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

AP20G06GD

60V N+P-Channel Enhancement Mode MOSFET

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司

150

N-Channel Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized V GS(th) v.s T J

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司5

I AS

V GS

BV DSS

V DD EAS=12L x I AS 2 x BV DSS

BV DSS -V DD

Fig.8 Safe Operating Area Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司

150

P-Channel Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized V GS(th) v.s T J

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司7

Fig.8 Safe Operating Area Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform

AP20G06GD R ve 3.8 臺灣永源微電子科技有限公司

Package Mechanical Data

Reel Spectification-TO-252-4

D 0P0

D 1

B 0

5°

A B

Dimensions

Millimeters Inches Ref.

Min.

Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0

B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.27

0.0090.011

0.0550.0633.90 4.106.900.27110P0

0.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.00

1.575

2.78

0.109

Φ329

Φ1320

16.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.80

40.20

1.567

1.583

Attention

1,Any and all APM Microelectronics products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your APM Microelectronics representative nearest

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AP20G06GD R ve3.8 臺灣永源微電子科技有限公司