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IRHM4Z60中文资料

Absolute Maximum Ratings

Parameter

Units I D

@ V GS = 12V, T C = 25°C

Continuous Drain Current 35* I D @ V GS = 12V, T C = 100°C

Continuous Drain Current 35*I DM

Pulsed Drain Current ?140P D @ T C = 25°C

Max. Power Dissipation 250W

Linear Derating Factor 2.0W/°C

V GS Gate-to-Source Voltage

±20V E AS Single Pulse Avalanche Energy ?500mJ I AR Avalanche Current ?

35A E AR Repetitive Avalanche Energy ?25mJ dv/dt

Peak Diode Recovery dv/dt ?0.35V/ns

T J Operating Junction

-55 to 150

T STG

Storage Temperature Range Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s)

Weight

9.3 (Typical )

Pre-Irradiation

International Rectifier’s RAD-Hard HEXFET ? technol-ogy provides high performance power MOSFETs for space applications. This technology has over a de-cade of proven performance and reliability in satellite applications. These devices have been character-ized for both Total Dose and Single Event Effects (SEE).The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching,ease of paralleling and temperature stability of elec-trical parameters.

RADIATION HARDENED POWER MOSFET

THRU-HOLE (TO-254AA)

12/20/01

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Product Summary

Part Number Radiation Level R DS(on) I D IRHM7Z60 100K Rads (Si) 0.014? 35*A IRHM3Z60 300K Rads (Si) 0.014? 35*A IRHM4Z60 600K Rads (Si) 0.014? 35*A IRHM8Z60 1000K Rads (Si) 0.014? 35*A

For footnotes refer to the last page

*Current is limited by internal wire diameter

IRHM7Z60

30V , N-CHANNEL

RAD-Hard ?

HEXFET ?

TECHNOLOGY

TO-254AA

Features:

n Single Event Effect (SEE) Hardened n Low R DS(on)

n Low Total Gate Charge n Proton Tolerant

n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n

Light Weight

PD - 91701B

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IRHM7Z60Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I S Continuous Source Current (Body Diode)——35*I SM Pulse Source Current (Body Diode) ?——140V SD Diode Forward Voltage —— 1.5V T j = 25°C, I S = 35A, V GS = 0V ?t rr Reverse Recovery Time ——220nS T j = 25°C, I F = 35A, di/dt ≤ 100A/μs

Q RR Reverse Recovery Charge —

—

930

μC

V DD ≤ 50V ?

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L S + L D .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R thJC Junction-to-Case ——0.50R thCS Case-to-Sink

—0.21— R thJA

Junction-to-Ambient

—

—48

T ypical Socket Mount

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BV DSS Drain-to-Source Breakdown Voltage 30——V V GS = 0V , I D = 1.0mA

?BV DSS /?T J Temperature Coefficient of Breakdown

—0.02—V/°C Reference to 25°C, I D = 1.0mA

Voltage

R DS(on)Static Drain-to-Source On-State

——0.014V GS = 12V , I D = 35A Resistance

V GS(th)Gate Threshold Voltage 2.0

— 4.0V V DS = V GS , I D = 1.0mA g fs Forward Transconductance 21——S ( )V DS > 15V , I DS = 35A ?I DSS Zero Gate Voltage Drain Current

——25V DS = 24V ,V GS =0V

——250V DS = 24V ,

V GS = 0V, T J = 125°C

I GSS Gate-to-Source Leakage Forward ——100V GS = 20V I GSS Gate-to-Source Leakage Reverse ——-100V GS = -20V Q g Total Gate Charge

—— 421V GS =12V , I D = 35A

Q gs Gate-to-Source Charge

——104nC

V DS = 15V Q gd Gate-to-Drain (‘Miller’) Charge ——115t d (on)Turn-On Delay Time ——32V DD =15V , I D = 35A t r Rise Time

——370V GS =12V, R G = 2.35?

t d (off)Turn-Off Delay Time ——177t f

Fall Time

——280L S + L D

Total Inductance

—

6.8

—

C iss Input Capacitance —7000—V GS = 0V , V DS = 25V

C oss Output Capacitance

—4800—pF

f = 1.0MHz

C rss

Reverse Transfer Capacitance —1800—

nA ?

?nH

μA

*Current is limited by the internal wire diameter

?°C/W

Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)

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Pre-Irradiation

IRHM7Z60

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ??

Parameter

100K Rads(Si)1 300 - 1000K Rads (Si)2

Units Test Conditions

Min Max Min Max

BV DSS Drain-to-Source Breakdown Voltage 30 — 30 — V V GS = 12V , I D = 1.0mA V GS(th)Gate Threshold Voltage 2.0 4.0 1.25 4.5 V GS = V DS , I D = 1.0mA

I GSS

Gate-to-Source Leakage Forward — 100 — 100 nA V GS = 20V I GSS Gate-to-Source Leakage Reverse — -100 — -100 V GS = -20 V I DSS Zero Gate Voltage Drain Current — 25 — 50 μA V DS =24V , V GS =0V R DS(on)Static Drain-to-Source ? — 0.014 — 0.035 ? V GS = 12V , I D =15A

On-State Resistance (TO-3)

R DS(on)Static Drain-to-Source ? — 0.014 — 0.035 ? V GS = 12V, I D =15A

On-State Resistance (TO-254AA)

V SD Diode Forward Voltage ? — 1.5 — 1.5 V V GS = 0V , I S = 35A

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

1. Part number IRHM7Z60

2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

n o I T

E L )

)2m c /g m (/V e M y g r e n E )V e M (e g n a R )m μ()

V (S D V V

0=S G V @V

5-=S G V @V

01-=S G V @V

51-=S G V @V

-=S G V @r B 8.63503930303035202I 9.955438.235252025101U

A 3

.083

135

.625

.225

Radiation Characteristics

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IRHM7Z60Pre-Irradiation

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Pre-Irradiation IRHM7Z60

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRHM7Z60Pre-Irradiation

Fig 10a.

Switching Time Test Circuit

V V d(on)

d(off)

Fig 10b. Switching Time Waveforms

V DD

Case Temperature

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Pre-Irradiation

IRHM7Z60

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

I A S

V D D

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IRHM7Z60

Pre-Irradiation

?Pulse width ≤ 300 μs; Duty Cycle ≤ 2%?Total Dose Irradiation with V GS Bias.

12 volt V GS applied and V DS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.?Total Dose Irradiation with V DS Bias.24 volt V DS applied and V GS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

?Repetitive Rating; Pulse width limited by

maximum junction temperature.

?V DD = 25V , starting T J = 25°C, L=0.82mH Peak I L = 35A, V GS =12V ?I SD ≤ 35A, di/dt ≤ 81A/μs,V DD ≤ 30V, T J ≤ 150°C

Foot Notes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.wendangku.net/doc/3d5011686.html, for sales contact information .

Data and specifications subject to change without notice. 12/01

Case Outline and Dimensions — TO-254AA

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.